scholarly journals Designing Splicing Digital Microfluidics Chips Based on Polytetrafluoroethylene Membrane

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1067
Author(s):  
Haoqiang Feng ◽  
Zichuan Yi ◽  
Ruizhi Yang ◽  
Xiaofeng Qin ◽  
Shitao Shen ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Silicone Oil ◽  
Digital Microfluidics ◽  
Simultaneous Detection ◽  
Driving Voltage ◽  
Electrowetting On Dielectric ◽  
Practical Applications ◽  
Multiple Components ◽  
Ito Glass ◽  
Off Time

As a laboratory-on-a-chip application tool, digital microfluidics (DMF) technology is widely used in DNA-based applications, clinical diagnosis, chemical synthesis, and other fields. Additional components (such as heaters, centrifuges, mixers, etc.) are required in practical applications on DMF devices. In this paper, a DMF chip interconnection method based on electrowetting-on-dielectric (EWOD) was proposed. An open modified slippery liquid-infused porous surface (SLIPS) membrane was used as the dielectric-hydrophobic layer material, which consisted of polytetrafluoroethylene (PTFE) membrane and silicone oil. Indium tin oxide (ITO) glass was used to manufacture the DMF chip. In order to test the relationship between the splicing gap and droplet moving, the effect of the different electrodes on/off time on the minimum driving voltage when the droplet crossed a splicing gap was investigated. Then, the effects of splicing gaps of different widths, splicing heights, and electrode misalignments were investigated, respectively. The experimental results showed that a driving voltage of 119 V was required for a droplet to cross a splicing gap width of 300 μm when the droplet volume was 10 μL and the electrode on/off time was 600 ms. At the same time, the droplet could climb a height difference of 150 μm with 145 V, and 141 V was required when the electrode misalignment was 1000 μm. Finally, the minimum voltage was not obviously changed, when the same volume droplet with different aqueous solutions crossed the splicing gap, and the droplet could cross different chip types. These splicing solutions show high potential for simultaneous detection of multiple components in human body fluids.

Digital Microfluidic Device for Hotspot Cooling in ICS Using Electrowetting on Dielectric

2012 ◽  
Author(s):  
Govindraj Shreyas Bindiganavale ◽  
Hyejin Moon ◽  
Seung Mun You ◽  
Miguel Amaya
Keyword(s):  
Indium Tin Oxide ◽  
Single Phase ◽  
Cooling System ◽  
Liquid Droplet ◽  
Digital Microfluidics ◽  
Small Scale ◽  
Cooling Performance ◽  
Electrowetting On Dielectric ◽  
Drop Motion ◽  
Before And After

To meet the increasing demand of efficient cooling performance in small scale, this paper presents a digital microfluidics (DMF) microscale liquid cooling system which works on the principle of electrowetting on dielectric (EWOD). In EWOD DMF, fluids are handled drop-wise by external electric field. When the dispensed liquid droplet arrives at the hotspot by EWOD DMF operation, it picks up heat and removes heat when it leaves. This process can be repeated for a series of droplets by using a completely automated LabVIEW controlled system connected to the PCB package. With the help of indium tin oxide (ITO) thin film resistance temperature detectors (RTD) and pre-calibrated temperature coefficient of resistance (TCR) data, the temperatures of the hotspot before and after the residence of liquid droplet (i.e., cooling) can be recorded for different frequencies (dwelling time period of droplet on the hotspot) of the drop motion and varying heater power. Future work will involve RTD resistance data collection to plot the heat flux and the temperature difference (before and after cooling) for different frequencies of drop motion. Although the primary focus is to study single phase cooling, the DI water drop will experience considerable evaporation resulting in higher cooling performance. The single phase cooling studies will help in establishing a robust platform for future two-phase cooling analysis in which evaporation effects will be considered.

scholarly journals Black Phosphorus-Molybdenum Disulfide Hetero-Junctions Formed with Ink-Jet Printing for Potential Solar Cell Applications with Indium-Tin-Oxide

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 560
Author(s):  
Ravindra Ketan Mehta ◽  
Anupama Bhat Kaul
Keyword(s):  
Electrical Properties ◽  
Molybdenum Disulfide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Cost Effective ◽  
Contact Materials ◽  
Ito Glass ◽  
The Future ◽  
Potential Applications ◽  
Jet Printing

In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture. We also compared the optical and electrical properties of the inkjet-printed BP layer with that of the MoS2 and the electrical properties of the mechanically exfoliated MoS2 with that of the inkjet-printed MoS2. We found significant differences in the optical characteristics of the inkjet-printed BP and MoS2 layers attributed to the differences in their underlying crystal structure. The newly demonstrated liquid exfoliated and inkjet-printed BP–MoS2 2D p–n junction was also compared with previous reports where mechanically exfoliated BP–MoS2 2D p–n junction were used. The electronic transport properties of mechanically exfoliated MoS2 membranes are typically better compared to inkjet-printed structures but inkjet printing offers a cost-effective and quicker way to fabricate heterostructures easily. In the future, the performance of inkjet-printed structures can be further improved by employing suitable contact materials, amongst other factors such as modifying the solvent chemistries. The architecture reported in this work has potential applications towards building solar cells with solution processed 2D materials in the future.

Fabrication of Micro-OLEDs by Room-temperature Curing Nanocontact-print Lithography Using DLC Molds

2012 ◽  
Vol 1511 ◽  
Author(s):  
Ippei Ishikawa ◽  
Keisuke Sakurai ◽  
Shuji Kiyohara ◽  
Taisuke Okuno ◽  
Hideto Tanoue ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Insulating Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Ito Glass

ABSTRACTThe microfabrication technologiesfor organic light-emitting devices (OLEDs) are essential to the fabrication of the next generation of light-emitting devices. The micro-OLEDs fabricated by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds have been investigated. However, light emissions from 10 μm-square-dot OLEDs fabricated by the RTC-NIL method have not been uniform. Therefore, we proposed the fabrication of micro-OLEDs by room-temperature curing nanocontact-print lithography (RTC-NCL) using the diamond-like carbon (DLC) mold. The DLC molds used in RTC-NCL were fabricated by an electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in electron beam (EB) lithography technology. The mold patterns are square and rectangle dots which has 10 µm-width, 10 µm-width and50 µm-length, respectively. The height of the patterns is 500 nm. The DLC molds were used to form the insulating layer of polysiloxane in RTC-NCL. We carried out the RTC-NCL process using the DLC mold under the following optimum conditions: 0.1 MPa-pressure for coating DLC mold with polysiloxane film, 2.1 MPa-pressure for transferring polysiloxane from DLC mold pattern to indium tin oxide (ITO) glass substrate. We deposited N, N'-Diphenyl -N, N'-di (m-tolyl)benzidine (TPD) [40 nm-thickness] as hole transport layer / Tris(8-quinolinolato)aluminum (Alq3) [40 nm-thickness] as electron transport layer / Al [200 nm-thickness] as cathode on ITO glass substrateas anode in this order. We succeeded in formation of the insulating layer with square and rectangle dots which has 10 µm-width,10 µm-width and 50 µm-length, and operation of micro-OLEDs by RTC-NIL using DLC molds.

scholarly journals Microwave Spectroscopic Detection of Human Hsp70 Protein on Annealed Gold Nanostructures on ITO Glass Strips

Biosensors ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 118
Author(s):  
Rodica Ionescu ◽  
Raphael Selon ◽  
Nicolas Pocholle ◽  
Lan Zhou ◽  
Anna Rumyantseva ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Stress Disorders ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Conductive Glass ◽  
Hsp70 Protein ◽  
Atomic Force ◽  
Ito Glass ◽  
First Time ◽  
Human Heat Shock Protein

Conductive indium-tin oxide (ITO) and non-conductive glass substrates were successfully modified with embedded gold nanoparticles (AuNPs) formed by controlled thermal annealing at 550 °C for 8 h in a preselected oven. The authors characterized the formation of AuNPs using two microscopic techniques: scanning electron microscopy (SEM) and atomic force microscopy (AFM). The analytical performances of the nanostructured-glasses were compared regarding biosensing of Hsp70, an ATP-driven molecular chaperone. In this work, the human heat-shock protein (Hsp70), was chosen as a model biomarker of body stress disorders for microwave spectroscopic investigations. It was found that microwave screening at 4 GHz allowed for the first time the detection of 12 ng/µL/cm2 of Hsp70.

scholarly journals Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

2021 ◽  
Author(s):  
J. Koaib ◽  
N. Bouguila ◽  
M. Kraini ◽  
I. Halidou ◽  
K. Khirouni ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Electrical Conductance ◽  
Average Crystallite Size ◽  
Chemical Spray Pyrolysis ◽  
Electrical Equivalent Circuit ◽  
Ito Glass

Abstract In2S3 thin films were grown on indium tin oxide (ITO) glass substrate by chemical spray pyrolysis technique at 360°C. The structural analysis of the deposited films shows a combination of tetragonal and cubic structures. The average crystallite size is about 25 nm. The electrical properties of In2S3 thin films have been investigated in a wide frequency (40Hz-100MHz) and temperature (400 K-660 K) ranges.We find that the electrical conductance of the In2S3 thin films is frequency and temperature dependent. The dc conductance shows a semi-conductor behavior for In2S3 films over the explored range of temperature and it follows the Arrhenius law with different activation energies. The variation of ac conductance and the frequency exponent `s’ are explained by the correlated barrier hopping (CBH) model. The Nyquist plots of impedance exhibit semicircle arcs and an electrical equivalent circuit has been suggested to interpret the impedance results.

scholarly journals Opto-Electronic Properties of Epoxy/Silicone Blend Based Thin Films

2021 ◽  
Author(s):  
Younes Ziat ◽  
Hamza Belkhanchi ◽  
Maryama Hammi ◽  
Charaf Laghlimi ◽  
A Moutcine
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transition ◽  
Sol Gel ◽  
Glass Substrates ◽  
Nanostructured Thin Films ◽  
Ito Glass ◽  
Potential Applications ◽  
Optical Applications ◽  
Nitrogen Doped Carbon

Abstract Recently, the rise of two dimensional amorphous nanostructured thin films have ignited a big interest because of their intriguingly isotropic structural and physical properties leading to potential applications in the nano-optoelectronics. However, according to literature, most of optoelectronic properties are investigated on chalcogenides related heterostructures. This has motivated the present work aiming to provide a new platform for the fabrication, examination of the properties and the applications of 2D nanostructured thin films based on epoxy/silicone blend. Thin films of Epoxy/Silicone loaded with nitrogen doped carbon nanotubes (N-CNTs) were prepared by sol-gel method and deposited on Indium Tin Oxide (ITO) glass substrates at room temperature. Further examination of optical properties aimed the investigation of optical pseudo-gap and Urbach energy and enabled the determination of processed films thickness based on Manifacier and Swanepol method. The results indicated that the unloaded thin films have a direct optical transition with a value of 3.61 eV followed by noticeable shift towards narrowing gaps depending on the loading rate. Urbach's energy is 0.19 eV for the unloaded thin films, and varies from 0.43 to 1.33 eV for the loaded thin films with increasing the rate of N-CNTs. It is inversely variable with the optical pseudo-gap. Finally, Epoxy/Silicone loaded with N-CNTs nanocomposites films can be developed as active layers with specific optical characteristics, giving the possibility to be used in electro-optical applications.

scholarly journals Temperature effect on optical properties of nickel (ii) phthalocyanine tetrasulfonic acid tetrasodium salt (NiPcTs) organic thin films

2019 ◽  
Vol 13 (28) ◽  
pp. 44-51
Author(s):  
Ameer F. Abdulameer
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Organic Thin Films ◽  
Effect Of Temperature ◽  
Good Information ◽  
Energy Gaps ◽  
Ito Glass

This study describe the effect of temperature on the opticalproperties of nickel(ii) phthalocyanine tetrasulfonic acid tetrasodiumsalt (NiPcTs) organic thin films which are prepared by spin coatingon indium tin oxide (ITO-glass). The optical absorption spectra ofthese thin films are measured. Present studies reveal that the opticalband gap energies of NiPcTs thin films are dependent on theannealing temperatures. The optical band gap decreases with increasein annealing temperature, then increased when the temperature risingto 473K. To enhance the results of Uv-Vis measurements and getmore accurate values of optical energy gaps; the Photoluminescencespectra of as-deposited and annealed NiPcTs thin films was studied.FTIR measurements for NiPcTs thin films also carried out in thiswork and gave good information about the NiPcTs bonds and itslocations as a compared with H2Pc as a reference.

Fabrication of the ZnS-ZnO Composite Film by Sulfurizing the as-Electrodeposited ZnO Film

2014 ◽  
Vol 881-883 ◽  
pp. 909-913
Author(s):  
Zi Feng Wang ◽  
Yong Zhao Liu ◽  
Yu Shan Liu ◽  
Jian Min Zhang
Keyword(s):  
Composite Film ◽  
Indium Tin Oxide ◽  
Zinc Nitrate ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray ◽  
Ito Glass ◽  
Sodium Sulfide Solution ◽  
Sulfide Solution

The ZnS-ZnO composite film was successfully prepared by sulfidation of the as-electrodeposited ZnO film in the aqueous solution of zinc nitrate and hexamethylenetetramine. The ZnO film was electrodeposited on the substrate of indium-tin oxide (ITO) glass, and then the sodium sulfide solution was used to convert the ZnO film into the ZnS-ZnO composite film. The products were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectrometer (EDS) and UVvisible absorption. The experimental results show that the composite film on ITO glass still retained the morphology of as-electrodeposited ZnO coating, and is composed of ZnS with cubic structure and ZnO with hexagonal structure.

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