scholarly journals Surface/Interface Engineering for Constructing Advanced Nanostructured Light-Emitting Diodes with Improved Performance: A Brief Review

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 821 ◽  
Author(s):  
Lianzhen Cao ◽  
Xia Liu ◽  
Zhen Guo ◽  
Lianqun Zhou
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Device Performance ◽  
Interface Properties ◽  
Light Emitting ◽  
Structured Materials ◽  
Light Emitting Devices ◽  
Interface Surface ◽  
Improved Performance ◽  
Low Dimensional

With the rise of nanoscience and nanotechnologies, especially the continuous deepening of research on low-dimensional materials and structures, various kinds of light-emitting devices based on nanometer-structured materials are gradually becoming the natural candidates for the next generation of advanced optoelectronic devices with improved performance through engineering their interface/surface properties. As dimensions of light-emitting devices are scaled down to the nanoscale, the plentitude of their surface/interface properties is one of the key factors for their dominating device performance. In this paper, firstly, the generation, classification, and influence of surface/interface states on nanometer optical devices will be given theoretically. Secondly, the relationship between the surface/interface properties and light-emitting diode device performance will be investigated, and the related physical mechanisms will be revealed by introducing classic examples. Especially, how to improve the performance of light-emitting diodes by using factors such as the surface/interface purification, quantum dots (QDs)-emitting layer, surface ligands, optimization of device architecture, and so on will be summarized. Finally, we explore the main influencing actors of research breakthroughs related to the surface/interface properties on the current and future applications for nanostructured light-emitting devices.

A life estimation model applied to organic light-emitting diodes

2018 ◽  
Vol 51 (5) ◽  
pp. 764-773
Author(s):  
JP Zhang ◽  
Y Zong ◽  
Y Meng ◽  
WG Pan ◽  
JS Tang
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Decay Data ◽  
Light Emitting Devices ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Extrapolation Model ◽  
Accelerated Life

For predicting life for light-emitting devices quickly and accurately, a novel life prediction model, namely an extrapolation model of accelerated life and stress, has been proposed. In this model, a Weibull function is employed to fit luminance decay data under multiple groups of accelerated stresses, and the corresponding accelerated life is obtained. By determination coefficients and root mean square errors, a power function is determined as an extrapolated function to describe the relationship between accelerated life and stress and the life of the light-emitting devices. For organic light-emitting diodes, three groups of constant-stress accelerated degradation tests were conducted by increasing current stress. An extrapolation model of accelerated life and stress was applied to process the collected luminance decay data and was evaluated by a careful comparison with organic light-emitting diode life. The results indicate that the self-designed experimental scheme for organic light-emitting diode is feasible and versatile; the predicted life is 17,113 hours, which is close to the service life derived from user feedback, and the relative error is only 2.2%. This shows that the extrapolation model of accelerated life and stress has high precision; the model reveals the expected law of luminance changing with time and intuitively depicts the life characteristics under accelerated stresses without conventional life tests. This will pave the way for a new method to predict and evaluate the life of modern light-emitting devices.

scholarly journals Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chang Yi ◽  
Chao Liu ◽  
Kaichuan Wen ◽  
Xiao-Ke Liu ◽  
Hao Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Formation Energy ◽  
High Efficiency ◽  
Intermediate Phase ◽  
Light Emitting Diode ◽  
Red Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Device Applications ◽  
Low Dimensional

Abstract Black phase CsPbI3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of γ-CsPbI3 films at 100 °C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI3 device applications.

scholarly journals In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gas Sensors ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Porous Structures ◽  
Light Emitting ◽  
Photochemical Etching ◽  
Recent Advances ◽  
Low Dimensional

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Efficient organic manganese (II) bromide green-light-emitting diodes enabled by manipulating hole and electron transport layer

2021 ◽  
Author(s):  
Hyunsik Im ◽  
Atanu Jana ◽  
Vijaya Gopalan Sree ◽  
QIANKAI BA ◽  
Seong Chan Cho ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices

Lead-free, non-toxic transition metal-based phosphorescent organic–inorganic hybrid (OIH) compounds are promising for next-generation flat-panel displays and solid-state light-emitting devices. In the present study, we fabricate highly efficient phosphorescent green-light-emitting diodes...

scholarly journals Unravelling the electron injection/transport mechanism in organic light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tsubasa Sasaki ◽  
Munehiro Hasegawa ◽  
Kaito Inagaki ◽  
Hirokazu Ito ◽  
Kazuma Suzuki ◽  
...  
Keyword(s):  
Work Function ◽  
Transport Mechanism ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Materials Used

AbstractAlthough significant progress has been made in the development of light-emitting materials for organic light-emitting diodes along with the elucidation of emission mechanisms, the electron injection/transport mechanism remains unclear, and the materials used for electron injection/transport have been basically unchanged for more than 20 years. Here, we unravelled the electron injection/transport mechanism by tuning the work function near the cathode to about 2.0 eV using a superbase. This extremely low-work function cathode allows direct electron injection into various materials, and it was found that organic materials can transport electrons independently of their molecular structure. On the basis of these findings, we have realised a simply structured blue organic light-emitting diode with an operational lifetime of more than 1,000,000 hours. Unravelling the electron injection/transport mechanism, as reported in this paper, not only greatly increases the choice of materials to be used for devices, but also allows simple device structures.

Efficient All-inorganic Perovskite Light-emitting Diodes Enabled by Manipulating Crystal Orientation

2021 ◽  
Author(s):  
Wenjing Feng ◽  
Kebin Lin ◽  
Wenqiang Li ◽  
Xiangtian Xiao ◽  
Jianxun Lu ◽  
...  
Keyword(s):  
Active Layer ◽  
Crystal Orientation ◽  
Light Emitting Diodes ◽  
Metal Halide ◽  
Device Performance ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Metal Halide Perovskite ◽  
Halide Perovskite

Metal halide perovskite light-emitting diodes (PeLEDs) are promising in lighting and display application, and the corresponding device performance is highly dependent on the film quality of the active layer. However,...

scholarly journals Improved performance of perovskite light-emitting diodes with a NaCl doped PEDOT:PSS hole transport layer

2021 ◽  
Author(s):  
Xiaokun Huang ◽  
Rainer Bäuerle ◽  
Felix Scherz ◽  
Jean-Nicolas Tisserant ◽  
Wolfgang Kowalsky ◽  
...  
Keyword(s):  
Alkali Halide ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting ◽  
Improved Performance

We demonstrate a simple and effective way to enhance the performance of perovskite light-emitting diodes (PeLEDs) by utilizing an alkali halide doped PEDOT:PSS as the hole transport layer (HTL). The...

Electrically driven single microribbon based near-infrared exciton-polariton light-emitting diode

CrystEngComm ◽  
2021 ◽  
Author(s):  
Mingming Jiang ◽  
Fupeng Zhang ◽  
Kai Tang ◽  
Peng Wan ◽  
Caixia Kan
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Light Sources ◽  
Coherent Light ◽  
Light Emitting ◽  
Exciton Polaritons ◽  
Laser Devices

Achieving electrically-driven exciton-polaritons has drawn substantial attention toward developing ultralow-threshold coherent light sources, containing polariton laser devices and high-performance light-emitting diodes (LEDs). In this work, we demonstrate an electrically driven...

scholarly journals The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Power ◽  
Light Extraction Efficiency ◽  
Excitation Power Density ◽  
Light Emitting

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

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