Efficient and Stable Blue Perovskite Light-Emitting Devices Based on Inorganic Cs4PbBr6 Spaced Low-Dimensional CsPbBr3 through Synergistic Control of Amino Alcohols and Polymer Additives

2021 ◽  
Author(s):  
Li Song ◽  
Lixin Huang ◽  
Yuan Liu ◽  
Yongsheng Hu ◽  
Xiaoyang Guo ◽  
...  
Keyword(s):  
Amino Alcohols ◽  
Polymer Additives ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Low Dimensional

On the performance of polymer:organometal halide perovskite composite light emitting devices: The effects of polymer additives

2018 ◽  
Vol 52 ◽  
pp. 350-355 ◽  
Author(s):  
Xiaxia Ji ◽  
Xuefeng Peng ◽  
Qi Wang ◽  
Jie Ren ◽  
Zuhong Xiong ◽  
...  
Keyword(s):  
Polymer Additives ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Halide Perovskite

scholarly journals Surface/Interface Engineering for Constructing Advanced Nanostructured Light-Emitting Diodes with Improved Performance: A Brief Review

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 821 ◽  
Author(s):  
Lianzhen Cao ◽  
Xia Liu ◽  
Zhen Guo ◽  
Lianqun Zhou
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Device Performance ◽  
Interface Properties ◽  
Light Emitting ◽  
Structured Materials ◽  
Light Emitting Devices ◽  
Interface Surface ◽  
Improved Performance ◽  
Low Dimensional

With the rise of nanoscience and nanotechnologies, especially the continuous deepening of research on low-dimensional materials and structures, various kinds of light-emitting devices based on nanometer-structured materials are gradually becoming the natural candidates for the next generation of advanced optoelectronic devices with improved performance through engineering their interface/surface properties. As dimensions of light-emitting devices are scaled down to the nanoscale, the plentitude of their surface/interface properties is one of the key factors for their dominating device performance. In this paper, firstly, the generation, classification, and influence of surface/interface states on nanometer optical devices will be given theoretically. Secondly, the relationship between the surface/interface properties and light-emitting diode device performance will be investigated, and the related physical mechanisms will be revealed by introducing classic examples. Especially, how to improve the performance of light-emitting diodes by using factors such as the surface/interface purification, quantum dots (QDs)-emitting layer, surface ligands, optimization of device architecture, and so on will be summarized. Finally, we explore the main influencing actors of research breakthroughs related to the surface/interface properties on the current and future applications for nanostructured light-emitting devices.

Some Unconventional Organic−Inorganic Hybrid Low-Dimensional Semiconductors and Related Light-Emitting Devices

2011 ◽  
Vol 115 (17) ◽  
pp. 8475-8483 ◽  
Author(s):  
I. Koutselas ◽  
P. Bampoulis ◽  
E. Maratou ◽  
T. Evagelinou ◽  
G. Pagona ◽  
...  
Keyword(s):  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Low Dimensional

scholarly journals Light-Emitting Devices – Luminescence from Low-Dimensional Nanostructures

10.5772/59103 ◽  
2014 ◽  
Author(s):  
S. Hadi Mousavi ◽  
Sima Alsadat Jafari Mohammadi ◽  
Hamid Haratizadeh ◽  
Peter W. de Oliveira
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Low Dimensional

scholarly journals Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chang Yi ◽  
Chao Liu ◽  
Kaichuan Wen ◽  
Xiao-Ke Liu ◽  
Hao Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Formation Energy ◽  
High Efficiency ◽  
Intermediate Phase ◽  
Light Emitting Diode ◽  
Red Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Device Applications ◽  
Low Dimensional

Abstract Black phase CsPbI3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of γ-CsPbI3 films at 100 °C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI3 device applications.

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  
Keyword(s):  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices

Probing local photophysical properties in perovskite based light-emitting devices

2019 ◽  
Author(s):  
Miguel Anaya ◽  
Kyle Frohna ◽  
Linsong Cui ◽  
Javad Shamsi ◽  
Sam Stranks
Keyword(s):  
Photophysical Properties ◽  
Light Emitting ◽  
Light Emitting Devices

Color Variable Bipolar/AC Light-Emitting Devices Based on Conjugated Polymers

1997 ◽  
Author(s):  
Y. Z. Wang ◽  
D. D. Gebler ◽  
D. K. Fu ◽  
T. M. Swager ◽  
A. J. Epstein
Keyword(s):  
Conjugated Polymers ◽  
Light Emitting ◽  
Light Emitting Devices
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