scholarly journals A Nanomechanical Analysis of Deformation Characteristics of 6H-SiC Using an Indenter and Abrasives in Different Fixed Methods

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 332 ◽  
Author(s):  
Jisheng Pan ◽  
Qiusheng Yan ◽  
Weihua Li ◽  
Xiaowei Zhang
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Elastic Moduli ◽  
Deformation Characteristics ◽  
Static Stiffness ◽  
Magnetorheological Finishing ◽  
Material Removal Mechanisms ◽  
Single Crystal Sic ◽  
Three Body ◽  
Precise Theory

The super-precise theory for machining single crystal SiC substrates with abrasives needs to be improved for its chemical stability, extremely hard and brittle. A Berkovich indenter was used to carry out a systematic static stiffness indentation experiments on single crystal 6H-SiC substrates, and then these substrates were machined by utilizing fixed, free, and semi-fixed abrasives, and the nanomechanical characteristics and material removal mechanisms using abrasives in different fixed methods were analyzed theoretically. The results indicated that the hardness of C faces and Si faces of single crystal 6H-SiC under 500 mN load were 38.596 Gpa and 36.246 Gpa respectively, and their elastic moduli were 563.019 Gpa and 524.839 Gpa, respectively. Moreover, the theoretical critical loads for the plastic transition and brittle fracture of C face of single crystal 6H-SiC were 1.941 mN and 366.8 mN, while those of Si face were 1.77 mN and 488.67 mN, respectively. The 6H-SiC materials were removed by pure brittle rolling under three-body friction with free abrasives, and the process parameters determined the material removal modes of 6H-SiC substrates by grinding with fixed abrasives, nevertheless, the materials were removed under full elastic-plastic deformation in cluster magnetorheological finishing with semi-fixed abrasives.

Material Removal Model of Sapphire Substrate in Double-Side Lapping Process

2009 ◽  
Vol 407-408 ◽  
pp. 460-464 ◽  
Author(s):  
Cong Da Lu ◽  
Dong Min Qian ◽  
Shao Fei Jiang
Keyword(s):  
Sapphire Substrate ◽  
Material Removal ◽  
Material Removal Mechanisms ◽  
Removal Mechanisms ◽  
Ductile Machining ◽  
Material Removal Model ◽  
Three Body Abrasion ◽  
Three Body ◽  
Processing Mechanisms ◽  
Removal Model

The material removal mechanisms of sapphire substrate in double-side lapping process were studied. The concepts of brittle vs. ductile machining and two-body vs. three-body abrasion were used to classify the processing mechanisms. The material removal models of double-side lapping process in different mechanisms were analyzed and researched. The experiment showed that the material removal model can describe double-side lapping process of sapphire qualitatively.

An Investigation of Material Removal Mechanisms in Lapping with Grain Size Transition

2000 ◽  
Vol 122 (3) ◽  
pp. 413-419 ◽  
Author(s):  
Y. P. Chang ◽  
M. Hashimura ◽  
D. A. Dornfeld
Keyword(s):  
Material Removal ◽  
Model Verification ◽  
Time Dependent ◽  
Depth Of Cut ◽  
Statistical Nature ◽  
Material Removal Mechanisms ◽  
Effective Inclusion ◽  
Three Body Abrasion ◽  
Three Body ◽  
Abrasive Size

The mechanical material removal (MRR) mechanisms in lapping were investigated, using concepts of two-body vs. three-body abrasion and ductile vs. brittle machining. The statistical nature of the depth of cut in the lapping process was described using distribution of abrasive sizes in the slurry. Through the change in abrasive size distribution, the time dependent characteristic of MRR was captured in the model. Experiments were conducted for model verification. It was found that a constant 60 deg effective inclusion angle allowed the model to fit measurement well. [S1087-1357(00)00504-9]

Magnetorheological finishing with chemically modified fluids for studying material removal of single-crystal ZnS

2013 ◽  
Author(s):  
S. Salzman ◽  
H. J. Romanofsky ◽  
Y. I. Clara ◽  
L. J. Giannechini ◽  
G. West ◽  
...  
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Magnetorheological Finishing ◽  
Chemically Modified

scholarly journals Effects of Depth of Cutting on Damage Interferences during Double Scratching on Single Crystal SiC

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 519
Author(s):  
Duan Nian
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Particle Hydrodynamics ◽  
Single Crystal Sic ◽  
Smoothed Particle ◽  
Planarization Process ◽  
Material Removal Mode ◽  
Sic Wafer

In this work, the damage interference during scratching of single crystal silicon carbide (SiC) by two cone-shaped diamond grits was experimentally investigated and numerically analyzed by coupling the finite element method (FEM) and smoothed particle hydrodynamics (SPH), to reveal the interference mechanisms during the micron-scale removal of SiC at variable Z-axis spacing along the depth of cutting (DOC) direction. The simulation results were well verified by the scratching experiments. The damage interference mechanism of SiC during double scratching at micron-scale was found to be closely related to the material removal modes, and can be basically divided into three stages at different DOCs: combined interference of plastic and brittle removal in the case of less than 5 µm, interference of cracks propagation when DOC was increased to 5 µm, and weakened interference stage during the fracture of SiC in the case of greater than 5 µm. Hence, DOC was found to play a determinant role in the damage interference of scratched SiC by influencing the material removal mode. When SiC was removed in a combined brittle-plastic mode, the damage interference occurred mainly along the DOC direction; when SiC was removed in a brittle manner, the interference was mainly along the width of cutting; and more importantly, once the fragment of SiC was initiated, the interference was weakened and the effect on the actual material removal depth also reduces. Results obtained in this work are believed to have essential implications for the optimization of SiC wafer planarization process that is becoming increasingly important for the fabrication of modern electronic devices.

scholarly journals Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2022 ◽  
Author(s):  
Yong Hu ◽  
Dong Shi ◽  
Ye Hu ◽  
Hongwei Zhao ◽  
Xingdong Sun
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Generation ◽  
Ultrasonic Assisted ◽  
Single Crystal Sic ◽  
Sic Wafer

A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.

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