scholarly journals Effects of Depth of Cutting on Damage Interferences during Double Scratching on Single Crystal SiC

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 519
Author(s):  
Duan Nian
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Particle Hydrodynamics ◽  
Single Crystal Sic ◽  
Smoothed Particle ◽  
Planarization Process ◽  
Material Removal Mode ◽  
Sic Wafer

In this work, the damage interference during scratching of single crystal silicon carbide (SiC) by two cone-shaped diamond grits was experimentally investigated and numerically analyzed by coupling the finite element method (FEM) and smoothed particle hydrodynamics (SPH), to reveal the interference mechanisms during the micron-scale removal of SiC at variable Z-axis spacing along the depth of cutting (DOC) direction. The simulation results were well verified by the scratching experiments. The damage interference mechanism of SiC during double scratching at micron-scale was found to be closely related to the material removal modes, and can be basically divided into three stages at different DOCs: combined interference of plastic and brittle removal in the case of less than 5 µm, interference of cracks propagation when DOC was increased to 5 µm, and weakened interference stage during the fracture of SiC in the case of greater than 5 µm. Hence, DOC was found to play a determinant role in the damage interference of scratched SiC by influencing the material removal mode. When SiC was removed in a combined brittle-plastic mode, the damage interference occurred mainly along the DOC direction; when SiC was removed in a brittle manner, the interference was mainly along the width of cutting; and more importantly, once the fragment of SiC was initiated, the interference was weakened and the effect on the actual material removal depth also reduces. Results obtained in this work are believed to have essential implications for the optimization of SiC wafer planarization process that is becoming increasingly important for the fabrication of modern electronic devices.

Experimental Investigation on Brittle-Ductile Transition in Electroplated Diamond Wire Saw Machining Single Crystal Silicon

2010 ◽  
Vol 431-432 ◽  
pp. 265-268 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Brittle Ductile Transition ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
R Value ◽  
Material Removal Mode

Based on reciprocating electroplated diamond wire saw (REDWS) slicing experiments, a study on REDWS machining brittle-ductile transition of single crystal silicon was introduced. The machined surfaces and chips were observed by using Scanning Electron Microscope (SEM), and some experimental evidences of the change of material removal mode had been obtained. The experimental results indicate there is a close relationship between material removal mode and the ratio r value of ingot feed speed and wire speed, through controlling and adjusting the r value, the material removal mode can be complete brittle, partial ductile and near-ductile removal.

A Comparison among Dry Laser Ablation and Some Different Water-Laser Co-Machining Processes of Single Crystal Silicon Carbide

2016 ◽  
Vol 861 ◽  
pp. 3-8 ◽  
Author(s):  
Shao Chuan Feng ◽  
Chuan Zhen Huang ◽  
Jun Wang ◽  
Hong Tao Zhu ◽  
Peng Yao ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Single Crystal ◽  
Thermal Damage ◽  
Single Crystal Silicon ◽  
Micro Machining ◽  
Machining Processes ◽  
Crystal Silicon ◽  
Machine Material ◽  
Single Crystal Sic

Single crystal silicon carbide (SiC) is a new semiconductor material that has a great potential to be widely used. However, SiC is a kind of difficult-to-machine material due to its extreme hardness and brittleness. The present study investigated the machinability of single crystal SiC using dry laser and three different water-laser co-machining processes. The results indicate that using the hybrid laser-waterjet micro-machining to micro-groove single crystal SiC can derive the clean and straight edges and thermal damage-free grooves.

scholarly journals Механизм диффузии монооксидов углерода и кремния в кристалле кубического карбида кремния

2019 ◽  
Vol 61 (12) ◽  
pp. 2334
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Silicon Monoxide ◽  
Vacancy Mechanism ◽  
Reaction Products ◽  
Crystal Silicon ◽  
Single Crystal Sic ◽  
Co Gas

The basic processes are described occurring in the case of the diffusion of carbon monoxide CO and silicon monoxide SiO through a layer of single-crystal silicon carbide SiC. This problem arises when a single-crystal SiC layer is grown by the method of atom substitution due to the chemical reaction of a crystalline silicon substrate with CO gas. The reaction products are the epitaxial layer of SiC and the gas SiO. It has been shown that CO and SiO molecules decompose in SiC crystals. Oxygen atoms migrate through interstitials in the [110] direction only with an activation energy of 2.6 eV. The migration of Si and C atoms occurs by the vacancy mechanism in the corresponding sublattices with activation energies of 3.6 eV and 3.9 eV, respectively, and also in the [110] direction only.

Effect of Polishing Time and Pressure on Polishing Pad Performance

2008 ◽  
Vol 389-390 ◽  
pp. 510-514
Author(s):  
A.Q. Biddut ◽  
Liang Chi Zhang ◽  
Y.M. Ali
Keyword(s):  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Critical Limit ◽  
Polishing Pads ◽  
Required Quality ◽  
Effective Life

This paper experimentally investigates the effect of time and pressure on the condition of polishing pads and the material removal rate (MRR) of single crystal silicon. It was found that as the pad deteriorates with time, MRR decreases. Surfaces with a required quality can only be achieved before the texture deterioration reaches a critical limit. At a higher pressure, 25 kPa, deterioration is slower, and the effective life of pads and MRR is enhanced.

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