scholarly journals Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Materials ◽  
2015 ◽  
Vol 8 (12) ◽  
pp. 8169-8182 ◽  
Author(s):  
Qifeng Lu ◽  
Yifei Mu ◽  
Joseph Roberts ◽  
Mohammed Althobaiti ◽  
Vinod Dhanak ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Permittivity ◽  
Gate Insulators ◽  
Germanium Substrates

Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

2009 ◽  
Vol 94 (4) ◽  
pp. 042901 ◽  
Author(s):  
Yi Zhao ◽  
Koji Kita ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Electrical Properties ◽  
Band Gap ◽  
Gate Insulators ◽  
High K

Molecular-dynamics study of interfacial diffusion between high-permittivity gate dielectrics and germanium substrates

2005 ◽  
Vol 20 (5) ◽  
pp. 1300-1307 ◽  
Author(s):  
T. Iwasaki
Keyword(s):  
Molecular Dynamics ◽  
Integrated Circuits ◽  
Oxygen Diffusion ◽  
Large Scale ◽  
Gate Dielectrics ◽  
High Permittivity ◽  
Interfacial Layers ◽  
Many Body Interactions ◽  
Interfacial Oxygen ◽  
Germanium Substrates

The stability of interfaces with germanium, which has recently been discussed as a replacement for silicon in ultra-large-scale integrated circuits (ULSIs), was studied. Interfacial oxygen diffusion from high-permittivity gate dielectrics (ZrO2 and HfO2) into germanium substrates must be suppressed to prevent the formation of interfacial layers between the gate dielectrics and the germanium substrates. Oxygen diffusion was simulated through a molecular-dynamics technique that takes into account many-body interactions and charge transfer between different elements. The simulation results show that the addition of yttrium is effective in suppressing interfacial oxygen diffusion at the ZrO2/germanium interfaces. On the other hand, the addition of yttrium is not effective in suppressing interfacial oxygen diffusion at the HfO2/germanium interfaces. The results also show that the diffusion at the ZrO2/Ge(111) and HfO2/Ge(111) interfaces is much more suppressed than the diffusion at the ZrO2/Ge(001) and HfO2/Ge(001) interfaces.

Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

2001 ◽  
Vol 48 (10) ◽  
pp. 2348-2356 ◽  
Author(s):  
Tiezhong Ma ◽  
S.A. Campbell ◽  
R. Smith ◽  
N. Hoilien ◽  
Boyong He ◽  
...  
Keyword(s):  
Metal Oxides ◽  
High Permittivity ◽  
Gate Insulators ◽  
Metal Nitrates

scholarly journals Enhancing High-Frequency Dielectric Properties of Beta-SiC Filled Nanocomposites from Synergy between Percolation and Polarization

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1699 ◽  
Author(s):  
Cheng Peng ◽  
Yefeng Feng ◽  
Jianbing Hu
Keyword(s):  
Electrical Properties ◽  
Polyvinyl Chloride ◽  
High Frequency ◽  
Vinyl Alcohol ◽  
Large Scale ◽  
Breakdown Strength ◽  
Induced Polarization ◽  
Poly Vinyl Alcohol ◽  
Scale Production ◽  
High Permittivity

Promising comprehensive properties, including high permittivity, low dielectric loss, high breakdown strength, low electrical conductivity, and high thermal conductivity, are very hard to simultaneously obtain in high-frequency applicable polymer nanocomposite dielectrics. Instead of traditional electric percolation, in this work, a novel route based on a synergy between electric percolation and induced polarization has been raised to prepare 0–3 type nanocomposites with an enhanced high permittivity (high-k) property and low loss at high frequency. This work aimed at optimizing that synergy to achieve the favorable properties mentioned above in composite dielectrics used at high frequencies such as 1 MHz and 1 GHz. Conductive beta-SiC nanoparticles with a particle size of ~30 nm were employed as filler and both insulating poly(vinyl alcohol) and polyvinyl chloride were employed as polymer matrices to construct two composite systems. Utilizing polyvinyl chloride rather than poly(vinyl alcohol) realizes higher comprehensive electrical properties in composites, ascribed to optimization of that synergy. The optimization was achieved based on a combination of mild induced polarization and polarization-assisted electric percolation. Therefore, this work might open the way for large-scale production of high-frequency applicable composite dielectrics with competitive comprehensive electrical properties.

Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

2005 ◽  
Vol 474 (1-2) ◽  
pp. 222-229 ◽  
Author(s):  
S. Dueñas ◽  
H. Castán ◽  
H. García ◽  
J. Barbolla ◽  
K. Kukli ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Comparative Study ◽  
Atomic Layer ◽  
Silicon Substrates ◽  
High Permittivity

Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si

2004 ◽  
Vol 48 (12) ◽  
pp. 2235-2241 ◽  
Author(s):  
C.K. Maiti ◽  
G.K. Dalapati ◽  
S. Chatterjee ◽  
S.K. Samanta ◽  
S. Varma ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Strained Si ◽  
High Permittivity
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