Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

2001 ◽  
Vol 48 (10) ◽  
pp. 2348-2356 ◽  
Author(s):  
Tiezhong Ma ◽  
S.A. Campbell ◽  
R. Smith ◽  
N. Hoilien ◽  
Boyong He ◽  
...  
1992 ◽  
Vol 271 ◽  
Author(s):  
J. J. Kingsley ◽  
L. A. Chick ◽  
G. W. Coffey ◽  
D. E. McCready ◽  
L. R. Pederson

ABSTRACTSr-substituted perovskite LaCo0.4Fe0.6O3 is known to have excellent mixed ionic and electronic conductivity and increased O2 sorption characteristics. These perovskites are usually prepared by lengthy solid-state reactions of the component oxides at temperatures near 1150°C, and often produce inhomogeneous, multi-phase powders. Presently, it has been prepared by the calcination of combustion-derived fine mixed oxides at 850°C in 6 hrs. Combustion reactions are carried out using precursor solutions containing the corresponding metal nitrates (oxidizers) and glycine (fuel) at 250°C. The metal oxides produced by this process and subsequent calcination were characterized by XRD, TEM and BET surface area analysis.


2013 ◽  
Vol 1547 ◽  
pp. 123-128 ◽  
Author(s):  
Nobuko Fukuda ◽  
Shintaro Ogura ◽  
Ken-ichi Nomura ◽  
Hirobumi Ushijima

ABSTRACTWe synthesized viscous precursors to indium gallium zinc oxide (IGZO) using three kinds of alcoholamines, ethanolamine (EA), diethanolamine (DEA), and triethanolamine (TEA), by a simple process. The viscous precursors are obtained just by vigorous stirring of alcoholamine and urea in an aqueous solution containing the metal nitrates during heating at 150-160 °C. The precursor containing EA (EA-precursor) is a pale-orange suspension containing aggregates of the metal hydroxides and shows pseudoplastic flow. The precursors containing DEA (DEA-precursor) and TEA (TEA-precursor) are transparent pale-yellow and dark-orange sols, respectively. They give Newtonian flow in the lower shear rate and pseudoplastic flow in the higher shear rate. Higher concentration of metal salts leads to higher viscosity of the precursors. According to thermogravimetry-differential thermal analysis (TG-DTA) for the EA- and DEA-precursors, evaporation of alcoholamine occurs at around each boiling point and subsequently formation of metal oxides occur at around 300 °C. In the case of the TEA-precursor, formation of metal oxides occurs before pyrolysis of TEA attributed to the higher boiling point of TEA. The thin IGZO film, which is prepared by spin-coating of the diluted DEA-precursor and subsequent sintering at 450 °C for 30 min, shows 0.02 cm2 ·V-1s-1 of the mobility and 10-5 of the on/off ratio. The highly viscous DEA-precursor containing high concentration of metal ions allows patterning in an area of 100 cm2 onto a surface of a silicon wafer with screen printing.


2001 ◽  
Vol 13 (8) ◽  
pp. 2463-2464 ◽  
Author(s):  
Roy G. Gordon ◽  
Jill Becker ◽  
Dennis Hausmann ◽  
Seigi Suh

Nanomaterials ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 1431-1441 ◽  
Author(s):  
Christian Weinberger ◽  
Jan Roggenbuck ◽  
Jan Hanss ◽  
Michael Tiemann

2003 ◽  
Vol 765 ◽  
Author(s):  
Bin Xia ◽  
Ryan Smith ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter

AbstractTo develop a high-κ gate dielectric for replacing SiO2 in MOSFETs, multi-component metal oxides could have advantages over single metal oxides because they may offer higher dielectric constants (κ's) as well as other favorable properties. To find the film composition for obtaining a good dielectric from the given component oxides is a time-consuming and costly process for multi-component systems. Recently, we reported a combinatorial chemical vapor deposition (CVD) technique to deposit compositional spreads of ternary metal-oxides for high-κ dielectrics. In this work, compositional spreads of ZrO2, TiO2, SnO2 and HfO2 were deposited using anhydrous metal nitrates. By measuring chemical composition, film thickness, and electrical properties, we are able to map κ and establish its dependence on film composition. This high-throughput deposition technique allows us to generate a compositional library quickly for screening material properties. In addition, a crystalline phase which does not exist in any of the four pure oxides, α-PbO2, was detected.


2005 ◽  
Vol 98 (5) ◽  
pp. 054506 ◽  
Author(s):  
M. Li ◽  
Z. Zhang ◽  
S. A. Campbell ◽  
W. L. Gladfelter ◽  
M. P. Agustin ◽  
...  

ChemInform ◽  
2010 ◽  
Vol 32 (47) ◽  
pp. no-no
Author(s):  
Roy G. Gordon ◽  
Jill Becker ◽  
Dennis Hausmann ◽  
Seigi Suh

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Long Kuai ◽  
Junxin Wang ◽  
Tian Ming ◽  
Caihong Fang ◽  
Zhenhua Sun ◽  
...  

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