scholarly journals Erratum: Preparation and electrical properties of InPxOy gate insulators on InP [Appl. Phys. Lett. 48, 375 (1986)]

1986 ◽  
Vol 48 (24) ◽  
pp. 1693-1693 ◽  
Author(s):  
H. L. Chang ◽  
L. G. Meiners ◽  
C. J. Sa
Keyword(s):  
Electrical Properties ◽  
Gate Insulators

Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

2009 ◽  
Vol 94 (4) ◽  
pp. 042901 ◽  
Author(s):  
Yi Zhao ◽  
Koji Kita ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Electrical Properties ◽  
Band Gap ◽  
Gate Insulators ◽  
High K

scholarly journals Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Materials ◽  
2015 ◽  
Vol 8 (12) ◽  
pp. 8169-8182 ◽  
Author(s):  
Qifeng Lu ◽  
Yifei Mu ◽  
Joseph Roberts ◽  
Mohammed Althobaiti ◽  
Vinod Dhanak ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Permittivity ◽  
Gate Insulators ◽  
Germanium Substrates

Dielectric and electrical properties of amorphous La1−xTaxOy films as higher-k gate insulators

2009 ◽  
Vol 105 (3) ◽  
pp. 034103 ◽  
Author(s):  
Yi Zhao ◽  
Koji Kita ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Electrical Properties ◽  
Gate Insulators

Electrical Properties of Diamond MISFETs with Submicron-Sized Gate on Boron-Doped (111) Surface

2005 ◽  
Vol 891 ◽  
Author(s):  
Takeyasu Saito ◽  
Kyung-ho Park ◽  
Kazuyuki Hirama ◽  
Hitoshi Umezawa ◽  
Mitsuya Satoh ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Conductive Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gate Insulators ◽  
Boron Doped ◽  
Effect Transistor

ABSTRACTAn H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, Idmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Formation of high temperature phase in flash-evaporated SnSe films

1990 ◽  
Vol 48 (4) ◽  
pp. 698-699
Author(s):  
J.P.S. Hanjra
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Gap ◽  
Dominant Role ◽  
Fine Powder ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Water Mixture ◽  
Flash Evaporation ◽  
Photovoltaic Applications

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.

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