scholarly journals Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics onFlexible Substrates

Materials ◽  
2014 ◽  
Vol 7 (11) ◽  
pp. 7226-7242 ◽  
Author(s):  
Kornelius Tetzner ◽  
Indranil Bose ◽  
Karlheinz Bock
Keyword(s):  
Field Effect ◽  
Liquid Crystalline ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Polymeric Semiconductor

Parylene-Based Double-Layer Gate Dielectrics for Organic Field-Effect Transistors

2018 ◽  
Vol 10 (44) ◽  
pp. 37767-37772 ◽  
Author(s):  
Hyunjin Park ◽  
Hyungju Ahn ◽  
Jimin Kwon ◽  
Seongju Kim ◽  
Sungjune Jung
Keyword(s):  
Double Layer ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals Channel length-dependent characterisations of organic thin-film transistors with solution processable gadolinium phthalocyanine derivatives

2019 ◽  
Vol 31 (1) ◽  
pp. 265-273 ◽  
Author(s):  
Seema Barard ◽  
Debdyuti Mukherjee ◽  
Sujoy Sarkar ◽  
T. Kreouzis ◽  
I. Chambrier ◽  
...  
Keyword(s):  
Field Effect ◽  
Liquid Crystalline ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Active Layers ◽  
Order Of Magnitude ◽  
Scaling Down ◽  
Voltage Swing

AbstractSpin-coated 52-nm-thick films of newly synthesised gadolinium liquid crystalline bisphthalocyanine sandwich (GdPc2) complexes with octyl chains non-peripheral positions have been successfully employed as active layers for bottom-gate organic field effect transistors having both short $$(5\,\upmu {\text{m}})$$(5μm) and long $$( 20\,\upmu {\text{m}})$$(20μm) channels. The scaling down of the channel length $$( L )$$(L) decreases the field effect mobility due to the increase in the contact resistance between the gold electrodes and the GdPc2 semiconducting layer. Values of on–off ratio and sub-threshold voltage swing are higher nearly one order of magnitude for $$L = 5 \,\upmu{\text{ m}}$$L=5μm than those for $$L = 20\;\upmu m$$L=20μm.

Highly stable flexible organic field-effect transistors with Parylene-C gate dielectrics on a flexible substrate

2019 ◽  
Vol 75 ◽  
pp. 105391 ◽  
Author(s):  
Hyeok-jin Kwon ◽  
Heqing Ye ◽  
Tae Kyu An ◽  
Jisu Hong ◽  
Chan Eon Park ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Flexible Substrate ◽  
Organic Field Effect Transistors ◽  
Parylene C
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