Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of organic field effect transistors (OFETs) on flexible substrate

2011 ◽  
Vol 257 (22) ◽  
pp. 9264-9268 ◽  
Author(s):  
Xinhong Yu ◽  
Zhe Wang ◽  
Sunyang Yu ◽  
Dongge Ma ◽  
Yanchun Han
2017 ◽  
Vol 5 (14) ◽  
pp. 3568-3578 ◽  
Author(s):  
Dong Gao ◽  
Zhihui Chen ◽  
Jianyao Huang ◽  
Weifeng Zhang ◽  
Congyuan Wei ◽  
...  

The performance of polymer field-effect transistors was enhanced by microstructure engineering through the use of a bi-component solvent.


2019 ◽  
Vol 75 ◽  
pp. 105391 ◽  
Author(s):  
Hyeok-jin Kwon ◽  
Heqing Ye ◽  
Tae Kyu An ◽  
Jisu Hong ◽  
Chan Eon Park ◽  
...  

2003 ◽  
Vol 769 ◽  
Author(s):  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui

AbstractWe report a simple and mild fabrication of flexible organic field-effect transistors (OFETs) by an electrode-peeling transfer method. Firstly, fine patterns of source-drain metal electrodes were formed on a solid substrate, where a micro-patterning process such as photolithography is applicable. An organic dielectric layer (poly-chloro-p-xylylene) was deposited by a chemical vapor deposition. Then patterned gate electrode was deposited using a shadow mask. On the top surface of the gate electrode, another adhesive flexible substrate was fixed and the stack of the flexible substrate/gate electrode /dielectric layer /source-drain electrode was peeled away from the solid substrate. The peeling-transfer was completed with a help of a self-assembled monolayer of n-decyl mercaptan as a connecting buffer layer between the gold electrodes and the dielectric layer. Then an organic semiconductor material was deposited on the fresh peeled-off surface on the flexible substrate. When pentacene was used as the semiconductor material, the OFETs exhibited a hole mobility of 0.1 cm2/Vs and a current on/off ratio of 105.


2006 ◽  
Vol 10 (10) ◽  
pp. 1179-1189 ◽  
Author(s):  
Christian Kelting ◽  
Wilfried Michaelis ◽  
Andreas Hirth ◽  
Dieter Wöhrle ◽  
Derck Schlettwein

Films of organic polymers were prepared and investigated as insulating layers in contact with phthalocyanines as organic semiconductors for use in organic field effect transistors. The polymer films were obtained either by a high-vacuum technique based on the thermal decomposition of polymers and polymerization of the fragments on a substrate, by the spin-coating of polymer solutions or by the cross-linking of spin-coated precursors. Poly(vinylchloride), poly(vinylidenefluoride), poly(acrylonitrile), poly(methylmethacrylate), poly( N -vinylpyrrolidone), poly(styrene), poly(4-vinylpyridine), poly( N -vinylcarbazole) and a polyimide were used as polymers. The film growth was studied by mass spectrometry and infrared spectroscopy. Electrochemical measurements by cyclic voltammetry served to analyze the properties of the polymer films. The morphology was determined by atomic force microscopy. Interactions of the films with phthalocyaninatozinc ( PcZn ) was analyzed for co-evaporated PcZn in the polymer films, to probe the chemical compatibility of the methods. Subsequently, evaporated PcZn or hexadecafluorophthalocyaninato-oxo-vanadium ( F 16 PcVO ) thin films were studied in detail by UV-vis spectroscopy and by electrical measurements to investigate interface formation, intermolecular coupling and electrical conduction in such films. The applicability of the different polymers as dielectric layers in organic field effect transistors, with phthalocyanines as the active semiconductor thin films, is discussed, based on their dielectric behavior and observed growth characteristics.


2014 ◽  
Vol 126 ◽  
pp. 55-58 ◽  
Author(s):  
L. Valentini ◽  
S. Bittolo Bon ◽  
M. Cardinali ◽  
E. Fortunati ◽  
J.M. Kenny

2016 ◽  
Vol 35 ◽  
pp. 186-192 ◽  
Author(s):  
Lili Liu ◽  
Zhongjie Ren ◽  
Chengyi Xiao ◽  
Huanli Dong ◽  
Shouke Yan ◽  
...  

2012 ◽  
Vol 1402 ◽  
Author(s):  
Marco R. Cavallari ◽  
Vinicius R. Zanchin ◽  
Cleber A. Amorim ◽  
Gerson dos Santos ◽  
Fernando J. Fonseca ◽  
...  

ABSTRACTTime of flight (ToF) is the most straightforward technique to determine polymeric semiconductor mobility for electronic applications. We demonstrate ToF limits of applicability to amorphous PPV derivatives, such as poly[2-methoxy-5-(3’,7’-dimethylloctyloxy)-1-4-phenylene vinylene] (MDMO-PPV) and poly[2-methoxy-5-(2’-ethylhexyloxy)-1-4-phenylene vinylene] (MEH-PPV), and polycrystalline poly(3-hexylthiophene) (P3HT). Hole and electron mobility (μ) in submicrometric films (200 – 500 nm) is overestimated compared to casted layers, due to reduced absorption capability, which is confirmed by Charge Extraction by Linearly Increasing Voltage (CELIV) measurements. Charge transport properties in nanometric films, such as for Field-Effect Transistors (FET), can not be studied by current-mode ToF. Hole mobility of ca. 10-5 cm2/Vs with Poole-Frenkel behavior for PPV derivatives and 10-3 cm2/Vs for P3HT is at least one order of magnitude higher than ToF results.


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