scholarly journals Carrier States in Ferromagnetic Semiconductors and Diluted Magnetic Semiconductors—Coherent Potential Approach—

Materials ◽  
2010 ◽  
Vol 3 (6) ◽  
pp. 3740-3776 ◽  
Author(s):  
Masao Takahashi
2009 ◽  
Vol 1183 ◽  
Author(s):  
Evgeny P. Skipetrov ◽  
Elena A. Zvereva ◽  
Nikolay A. Pichugin ◽  
Alexey E. Primenko ◽  
Evgeny I. Slyn'ko ◽  
...  

Abstract The galvanomagnetic and magnetic properties of novel diluted magnetic semiconductors Pb1-x-yCaxCryTe (x=0.06-0.20, y=0.003-0.045) have been investigated. Temperature dependencies of the resistivity and the Hall coefficient have a metallic character indicating the pinning of Fermi level by the chromium impurity level on the background of the conduction band states. Magnetization curves display a clear hysteresis loop over the whole temperature range investigated. The Curie temperature, determined from the temperature dependencies of magnetization, achieves 345 K. Possible mechanisms of ferromagnetic ordering were discussed.


2021 ◽  
Vol 2021 ◽  
pp. 1-5
Author(s):  
Gezahegn Assefa

Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs ( GaAsMn ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.


MRS Bulletin ◽  
2003 ◽  
Vol 28 (10) ◽  
pp. 714-719 ◽  
Author(s):  
Tomasz Dietl ◽  
Hideo Ohno

AbstractRecent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds with a focus on mechanisms determining Curie temperatures and accounting for magnetic anisotropy and spin stiffness as a function of carrier density, strain, and confinement. Materials issues encountered in the search for semiconductors with a Curie point above room temperature are addressed, emphasizing the question of solubility limits and self-compensation that can lead to precipitates and point defects. Prospects associated with compounds containing magnetic ions other than Mn are presented.


1988 ◽  
Vol 49 (C8) ◽  
pp. C8-873-C8-874
Author(s):  
H. J. M. Swagten ◽  
A. Twardowski ◽  
F. A. Arnouts ◽  
W. J. M. de Jonge ◽  
M. Demianiuk

2017 ◽  
Vol 9 (2) ◽  
pp. 02003-1-02003-3
Author(s):  
Rana Mukherji ◽  
◽  
Vishal Mathur ◽  
Arvind Samariya ◽  
Manishita Mukherji ◽  
...  

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