Ferromagnetic III–V and II–VI Semiconductors

MRS Bulletin ◽  
2003 ◽  
Vol 28 (10) ◽  
pp. 714-719 ◽  
Author(s):  
Tomasz Dietl ◽  
Hideo Ohno
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Spin Injection ◽  
Quantum Structures ◽  
Ferromagnetic Semiconductors ◽  
Magnetic Ions ◽  
Diluted Magnetic ◽  
Curie Temperatures ◽  
Present Understanding

AbstractRecent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds with a focus on mechanisms determining Curie temperatures and accounting for magnetic anisotropy and spin stiffness as a function of carrier density, strain, and confinement. Materials issues encountered in the search for semiconductors with a Curie point above room temperature are addressed, emphasizing the question of solubility limits and self-compensation that can lead to precipitates and point defects. Prospects associated with compounds containing magnetic ions other than Mn are presented.

Novel Room-temperature Ferromagnetic Semiconductors Pb1-x-yCaxCryTe

2009 ◽  
Vol 1183 ◽  
Author(s):  
Evgeny P. Skipetrov ◽  
Elena A. Zvereva ◽  
Nikolay A. Pichugin ◽  
Alexey E. Primenko ◽  
Evgeny I. Slyn'ko ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Curie Temperature ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Impurity Level ◽  
Ferromagnetic Semiconductors ◽  
Magnetization Curves ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

Abstract The galvanomagnetic and magnetic properties of novel diluted magnetic semiconductors Pb1-x-yCaxCryTe (x=0.06-0.20, y=0.003-0.045) have been investigated. Temperature dependencies of the resistivity and the Hall coefficient have a metallic character indicating the pinning of Fermi level by the chromium impurity level on the background of the conduction band states. Magnetization curves display a clear hysteresis loop over the whole temperature range investigated. The Curie temperature, determined from the temperature dependencies of magnetization, achieves 345 K. Possible mechanisms of ferromagnetic ordering were discussed.

Fabrication and Characterisation of Diluted Magnetic Semiconductors Thin Films Using Ion Beams

2012 ◽  
Vol 706-709 ◽  
pp. 2869-2873
Author(s):  
M. Ionescu ◽  
P. Photongkam ◽  
R. Siegele ◽  
A. Deslantes ◽  
S. Li ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Depth Distribution ◽  
Magnetic Semiconductors ◽  
Ion Irradiation ◽  
Research Effort ◽  
Critical Parameters ◽  
Ferromagnetic Behavior ◽  
Diluted Magnetic

The intrinsic n-type (II-VI) semiconductor ZnO may become ferromagnetic at room temperature, by small additions of magnetic ions, resulting in what is called a Diluted Magnetic Semiconductors (DMS). The potential application of DMS in spintronic devices of is driving the research effort to dope magnetic elements into this semiconductors with a depth distribution as uniform as possible. The doping levels and the depth distribution of dopants are critical parameters for the magnetic properties of this material and the possible clustering of dopants can play a significant negative role in its macroscopic magnetic properties. Thin ZnO (0001) films of between 100nm and 500nm, grown on c-Al2O3 by MOCVD were implanted with Co, Eu and Co+Eu by ion irradiation at low energies. In order to improve the depth distribution of dopants, the ion implantation was carried out through a number of appropriately chosen range foils. The results show an increase in the level of dopant homogeneity throughout the entire thickness of the film, and a ferromagnetic behavior above room temperature for Zn0.96Co0.04O, Zn0.96Eu0.04O and Zn0.92Co0.04Eu0.04O.

ESR Study of Novel Room-Temperature Ferromagnetic Semiconductors Pb1-X-YSnxCryTe

2010 ◽  
Vol 168-169 ◽  
pp. 404-407
Author(s):  
E.A. Zvereva ◽  
O.A. Savelieva ◽  
S. Ibragimov ◽  
E. Samokhvalov ◽  
E.I. Slynko ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Ordering ◽  
Esr Spectra ◽  
Chromium Concentration ◽  
Ferromagnetic Phase ◽  
Wide Range ◽  
Diluted Magnetic ◽  
Ordering Transition

We report on the magnetic properties of novel diluted magnetic semiconductors Pb1 x ySnxCryTe revealing ferromagnetism at temperatures higher than room temperature. Depending on chromium concentration the Curie temperature varies in a wide range (150360 K) and effective magnetic moment achieves 1 B upon an increase of chromium doping level. Electron spin resonance (ESR) spectra in the paramagnetic phase were satisfactory approximated by a single Dysonian line. Effective g-factor tends to the saturation value g=2.080.01, while the linewidth passes through a minimum in the vicinity of magnetic ordering transition and then broadens with an increase of the temperature. In ferromagnetic phase the pronounced distortion and splitting of the ESR spectra into two lines occurs due to additional ferromagnetic contribution to absorption.

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