Coherent-potential approach to magnetic and chemical disorder in diluted magnetic semiconductors

1999 ◽  
Vol 60 (23) ◽  
pp. 15858-15865 ◽  
Author(s):  
Masao Takahashi
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Potential Approach ◽  
Chemical Disorder ◽  
Diluted Magnetic

THE MAGNETIC PROPERTIES OF II-VI GROUP Fe-TYPE DILUTED MAGNETIC SEMICONDUCTORS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-873-C8-874
Author(s):  
H. J. M. Swagten ◽  
A. Twardowski ◽  
F. A. Arnouts ◽  
W. J. M. de Jonge ◽  
M. Demianiuk
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic

Assessment of the H2 Followed by Air Sintering of Co-doped In2O3 Based Diluted Magnetic Semiconductors

2017 ◽  
Vol 9 (2) ◽  
pp. 02003-1-02003-3
Author(s):  
Rana Mukherji ◽  
◽  
Vishal Mathur ◽  
Arvind Samariya ◽  
Manishita Mukherji ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic ◽  
Co Doped

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Neutron diffraction studies of diluted magnetic semiconductors (invited)

1982 ◽  
Vol 53 (11) ◽  
pp. 7644-7648 ◽  
Author(s):  
G. Dolling ◽  
T. M. Holden ◽  
V. F. Sears ◽  
J. K. Furdyna ◽  
W. Giriat
Keyword(s):  
Neutron Diffraction ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic
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