scholarly journals Annealing Effect on the Characteristics of Co40Fe40W10B10 Thin Films on Si(100) Substrate

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6017
Author(s):  
Wen-Jen Liu ◽  
Yung-Huang Chang ◽  
Yuan-Tsung Chen ◽  
Chun-Yu Chang ◽  
Jian-Xin Lai ◽  
...  
Keyword(s):  
Grain Size ◽  
Annealing Temperature ◽  
Low Frequency ◽  
Contact Angles ◽  
Good Thermal Stability ◽  
Annealing Temperatures ◽  
Hydrophilic Nature ◽  
Strong Adhesion ◽  
Alternative Current ◽  
Magnetic Tunneling

This research explores the behavior of Co40Fe40W10B10 when it is sputtered onto Si(100) substrates with a thickness (tf) ranging from 10 nm to 100 nm, and then altered by an annealing process at temperatures of 200 °C, 250 °C, 300 °C, and 350 °C, respectively. The crystal structure and grain size of Co40Fe40W10B10 films with different thicknesses and annealing temperatures are observed and estimated by an X-ray diffractometer pattern (XRD) and full-width at half maximum (FWHM). The XRD of annealing Co40Fe40W10B10 films at 200 °C exhibited an amorphous status due to insufficient heating drive force. Moreover, the thicknesses and annealing temperatures of body-centered cubic (BCC) CoFe (110) peaks were detected when annealing at 250 °C with thicknesses ranging from 80 nm to 100 nm, annealing at 300 °C with thicknesses ranging from 50 nm to 100 nm, and annealing at 350 °C with thicknesses ranging from 10 nm to 100 nm. The FWHM of CoFe (110) decreased and the grain size increased when the thickness and annealing temperature increased. The CoFe (110) peak revealed magnetocrystalline anisotropy, which was related to strong low-frequency alternative-current magnetic susceptibility (χac) and induced an increasing trend in saturation magnetization (Ms) as the thickness and annealing temperature increased. The contact angles of all Co40Fe40W10B10 films were less than 90°, indicating the hydrophilic nature of Co40Fe40W10B10 films. Furthermore, the surface energy of Co40Fe40W10B10 presented an increased trend as the thickness and annealing temperature increased. According to the results, the optimal conditions are a thickness of 100 nm and an annealing temperature of 350 °C, owing to high χac, large Ms, and strong adhesion; this indicates that annealing Co40Fe40W10B10 at 350 °C and with a thickness of 100 nm exhibits good thermal stability and can become a free or pinned layer in a magnetic tunneling junction (MTJ) application.

scholarly journals Effect of Yttrium Addition on Structure and Magnetic Properties of Co60Fe20Y20 Thin Films

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6001
Author(s):  
Wen-Jen Liu ◽  
Yung-Huang Chang ◽  
Yuan-Tsung Chen ◽  
Ding-Yang Tsai ◽  
Pei-Xin Lu ◽  
...  
Keyword(s):  
Grain Size ◽  
Magnetic Properties ◽  
Surface Energy ◽  
Spin Exchange ◽  
Low Frequency ◽  
Alternate Current ◽  
Thickness Effect ◽  
Annealing Temperatures ◽  
Yttrium Addition ◽  
Strong Adhesion

In this paper, a Co60Fe20Y20 film was sputtered onto Si (100) substrates with thicknesses ranging from 10 to 50 nm under four conditions to investigate the structure, magnetic properties, and surface energy. Under four conditions, the crystal structure of the CoFeY films was found to be amorphous by an X-ray diffraction analyzer (XRD), suggesting that yttrium (Y) added into CoFe films and can be refined in grain size and insufficient annealing temperatures do not induce enough thermal driving force to support grain growth. The saturation magnetization (MS) and low-frequency alternate-current magnetic susceptibility (χac) increased with the increase of the thicknesses and annealing temperatures, indicating the thickness effect and Y can be refined grain size and improved ferromagnetic spin exchange coupling. The highest Ms and χac values of the Co60Fe20Y20 films were 883 emu/cm3 and 0.26 when the annealed temperature was 300 °C and the thickness was 50 nm. The optimal resonance frequency (fres) was 50 Hz with the maximum χac value, indicating it could be used at a low frequency range. Moreover, the surface energy increased with the increase of the thickness and annealing temperature. The maximum surface energy of the annealed 300 °C film was 30.02 mJ/mm2 at 50 nm. Based on the magnetic and surface energy results, the optimal thickness was 50 nm annealed at 300 °C, which has the highest Ms, χac, and a strong adhesion, which can be as a free or pinned layer that could be combined with the magnetic tunneling layer and applied in magnetic fields.

ZrN Diffusion Barrier in Aluminum Metallization Schemes

1982 ◽  
Vol 18 ◽  
Author(s):  
L. Krusin-Elbaum ◽  
M. Wittmer ◽  
C.-Y. Ting ◽  
J. J. Cuomo
Keyword(s):  
Grain Size ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Barrier Properties ◽  
Metal Nitrides ◽  
X Ray ◽  
Annealing Temperatures ◽  
Fine Grain ◽  
Transmission Electron ◽  
Aluminum Metallization

We have studied reactively sputtered ZrN, the most thermally stable of the refractory metal nitrides, for its diffusion barrier properties in aluminum metallization schemes with Rutherford backscattering spectroscopy and transmission electron microscopy (TEM). We find this compound to be very effective against aluminum diffusion up to 500 °C, independently of substrate temperature during sputtering. The useful temperature range can be extended by 50 °C with proper preannealing prior to aluminum deposition. The TEM study of the ZrN grain size as a function of annealing temperature revealed that the grain size does not change significantly upon annealing and that the grains are relatively small even at the highest annealing temperatures (about 300 Å at 900 °C). In addition, for annealing temperatures of and below 500 °C large portions of ZrN films were found to be of either amorphous or extremely fine–grain material, thus inhibiting the diffusion along grain boundaries. The presence of Zr3Al4Si5 ternary compound in samples annealed at 600 °C, as determined by X-ray analysis, may suggest that the ZrN barrier fails by decomposition of the film by aluminum.

Recrystallisation Behaviour of an Fe-Mn-C-Si-Al TWIP

2012 ◽  
Vol 715-716 ◽  
pp. 649-654 ◽  
Author(s):  
Lieven Bracke ◽  
Nieves Cabañas-Poy
Keyword(s):  
Grain Size ◽  
Cold Rolling ◽  
Annealing Temperature ◽  
Twip Steel ◽  
Rolling Texture ◽  
Annealing Temperatures ◽  
Twip Steels ◽  
Cold Rolled ◽  
Main Components ◽  
Cold Rolling Texture

The static recrystallisation behaviour of cold rolled and annealed TWinning Induced Plasticity (TWIP) steels is important for its industrial production. The recrystallisation kinetics have been determined for an Fe-Mn-C-Si-Al TWIP steel using hardness measurements and microstructure analysis: it has been shown that recrystallisation progresses rapidly with increased annealing temperature. Recrystallisation was faster at higher cold reductions, and a smaller final grain size was observed at lower annealing temperatures. This indicates that the mechanism is nucleation dominated at lower temperatures; grain growth at higher temperatures appears similar for all reductions. The recrystallisation results in a crystallographic texture where the main components of the cold rolling texture are preserved in the final texture after annealing, although some randomisation was observed.

scholarly journals Impact of Annealing on Magnetic Properties and Structure of Co40Fe40W20 Thin Films on Si(100) Substrate

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3017
Author(s):  
Wen-Jen Liu ◽  
Yung-Huang Chang ◽  
Yuan-Tsung Chen ◽  
Tian-Yi Jhou ◽  
Ying-Hsuan Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetic Properties ◽  
Magnetic Layer ◽  
Low Frequency ◽  
X Ray Diffraction ◽  
Good Thermal Stability ◽  
Annealing Conditions ◽  
Thermal Disturbance ◽  
Alternative Current

Co40Fe40W20 monolayers of different thicknesses were deposited on Si(100) substrates by DC magnetron sputtering, with Co40Fe40W20 thicknesses from 10 to 50 nm. Co40Fe40W20 thin films were annealed at three conditions (as-deposited, 250 °C, and 350 °C) for 1 h. The structural and magnetic properties were then examined by X-ray diffraction (XRD), low-frequency alternative-current magnetic susceptibility (χac), and an alternating-gradient magnetometer (AGM). The XRD results showed that the CoFe (110) peak was located at 2θ = 44.6°, but the metal oxide peaks appeared at 2θ = 38.3, 47.6, 54.5, and 56.3°, corresponding to Fe2O3 (320), WO3 (002), Co2O3 (422), and Co2O3 (511), respectively. The saturation magnetization (Ms) was calculated from the slope of the magnetization (M) versus the CoFeW thickness. The Ms values calculated in this manner were 648, 876, 874, and 801 emu/cm3 at the as-deposited condition and post-annealing conditions at 250, 350, and 400 °C, respectively. The maximum MS was about 874 emu/cm3 at a thickness of 50 nm following annealing at 350 °C. It indicated that the MS and the χac values rose as the CoFeW thin films’ thickness increased. Owing to the thermal disturbance, the MS and χac values of CoFeW thin films after annealing at 350 °C were comparatively higher than at other annealing temperatures. More importantly, the Co40Fe40W20 films exhibited a good thermal stability. Therefore, replacing the magnetic layer with a CoFeW film improves thermal stability and is beneficial for electrode and strain gauge applications.

scholarly journals Influence of annealing temperature on reversible resistive switching of WOx thin filmsdeposited on FTO substrate

2014 ◽  
Vol 17 (3) ◽  
pp. 12-18
Author(s):  
Tam Thi Bang Dao ◽  
Thang Bach Pham
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Monoclinic Phase ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Crystalline Morphology ◽  
Annealing Temperatures ◽  
High Annealing ◽  
Bipolar Type ◽  
Switching Characteristics

In this work, we investigated effects of the annealing temperature on the crystalline, morphology of sputtered WOx thin films. The resutls show that as-deposited WOx thin films and annealed WOxthin films at 300oC, 600oC in the air are in monoclinic phase. As the annealing temperature increases, crystallinity of WOx thin films enhances with high(200) orientation. FESEM images showed larger grain size, and denser films at high annealing temperatures. The reversible resistance switching characteristics of the Ag/WOx/FTO structure follows bipolar type, the switching ratio decreases as the crystallinity of WOx thin films increases under an the annealing treatment.

scholarly journals Annealing Effect on the Contact Angle, Surface Energy, Electric Property, and Nanomechanical Characteristics of Co40Fe40W20 Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1268
Author(s):  
Wen-Jen Liu ◽  
Yung-Huang Chang ◽  
Chi-Lon Fern ◽  
Yuan-Tsung Chen ◽  
Tian-Yi Jhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Grain Size ◽  
Surface Energy ◽  
Annealing Temperature ◽  
High Surface ◽  
Single Layer ◽  
Contact Angles ◽  
Post Annealing ◽  
Post Annealing Temperature

This study investigated Co40Fe40W20 single-layer thin films according to their corresponding structure, grain size, contact angle, and surface energy characteristics. Co40Fe40W20 alloy thin films of different thicknesses, ranging from 10 to 50 nm, were sputtered on Si(100) substrates by DC magnetron sputtering. The thin films were annealed under three conditions: as-deposited, 250 °C, and 350 °C temperatures, respectively. The Scherrer equation was applied to calculate the grain size of Co40Fe40W20 thin films. The results show that the grain size of CoFe(110) increased simultaneously with the increase of post-annealing temperature, suggesting that the crystallinity of Co40Fe40W20 thin films increased with the post-annealing temperature. Moreover, the contact angles of all Co40Fe40W20 thin films were all less than 90°, suggesting that Co40Fe40W20 thin films show changes in the direction of higher hydrophilicity. However, we found that their contact angles decreased as the grain size of CoFe increased. Finally, the Young equation was applied to calculate the surface energy of Co40Fe40W20 thin films. After post-annealing, the surface energy of Co40Fe40W20 thin films increased with the rising post-annealing temperature. This is the highest value of surface energy observed for 350 °C. In addition, the surface energy increased as the contact angle of Co40Fe40W20 thin films decreased. The high surface energy means stronger adhesion, allowing the formation of multilayer thin films with magnetic tunneling junctions (MTJs). The sheet resistance of the as-deposited and thinner CoFeW films is larger than annealed and thicker CoFeW films. When the thickness is from 10 nm to 50 nm, the hardness and Young’s modulus of the CoFeW film also show a saturation trend.

scholarly journals Influence of the Curing and Annealing Temperatures on the Properties of Solution Processed Tin Oxide Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 851
Author(s):  
Christophe Avis ◽  
Jin Jang
Keyword(s):  
Grain Size ◽  
Carrier Concentration ◽  
Tin Oxide ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Curing Temperature ◽  
Electrical And Optical Properties ◽  
Solution Processed ◽  
Annealing Temperatures ◽  
Grain Sizes

We report the effect of the curing (Tcuring) and annealing (Tanneal) temperatures on the structural, electrical, and optical properties of solution processed tin oxide. Tanneal was varied from 300 to 500 °C, and Tcuring from 200 °C to Tanneal. All Tanneal lead to a polycrystalline phase, but the amorphous phase was observed at Tanneal = 300 °C and Tcuring ranging from 250 to 300 °C. This could be explained by the melting point of the precursor (SnCl2), occurring at 250 °C. The crystallinity can be effectively controlled by the annealing temperature, but the curing temperature dramatically affects the grain size. We can reach grain sizes from 5–10 nm (Tcuring = 200 °C and Tanneal = 300 °C) to 30–50 nm (Tcuring = 500 °C and Tanneal = 500 °C). At a fixed Tanneal, Hall mobilities, carrier concentration, and conductivity increased with the curing temperature. The Hall mobility was in the range of 1 to 9.4 cm2/Vs, the carrier concentration was 1018 to 1019 cm−3, and the conductivity could reach ~20 S/cm when the grain size was 30–50 nm. The optical transmittance, the optical bandgap, the refractive index, and the extinction coefficient were also analyzed and they show a correlation with the annealing process.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh
Keyword(s):  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Oxygen Flow ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Titanium Thin Films ◽  
Deposition Angle ◽  
Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

scholarly journals Experimental Investigation on Micro Deep Drawing of Stainless Steel Foils with Different Microstructural Characteristics

2021 ◽  
Vol 34 (1) ◽  
Author(s):  
Jingwei Zhao ◽  
Tao Wang ◽  
Fanghui Jia ◽  
Zhou Li ◽  
Cunlong Zhou ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Deep Drawing ◽  
Annealing Temperature ◽  
Localized Deformation ◽  
Microstructural Characteristics ◽  
Height Profile ◽  
Annealing Temperatures ◽  
Micro Deep Drawing ◽  
Profile Distribution

AbstractIn the present work, austenitic stainless steel (ASS) 304 foils with a thickness of 50 µm were first annealed at temperatures ranging from 700 to 1100 ℃ for 1 h to obtain different microstructural characteristics. Then the effects of microstructural characteristics on the formability of ASS 304 foils and the quality of drawn cups using micro deep drawing (MDD) were studied, and the mechanism involved was discussed. The results show that the as-received ASS 304 foil has a poor formability and cannot be used to form a cup using MDD. Serious wrinkling problem occurs on the drawn cup, and the height profile distribution on the mouth and the symmetry of the drawn cup is quite non-uniform when the annealing temperature is 700 ℃. At annealing temperatures of 900 and 950 ℃, the drawn cups are both characterized with very few wrinkles, and the distribution of height profile, symmetry and mouth thickness are uniform on the mouths of the drawn cups. The wrinkling becomes increasingly significant with a further increase of annealing temperature from 950 to 1100 ℃. The optimal annealing temperatures obtained in this study are 900 and 950 ℃ for reducing the generation of wrinkling, and therefore improving the quality of drawn cups. With non-optimized microstructure, the distribution of the compressive stress in the circumferential direction of the drawn foils becomes inhomogeneous, which is thought to be the cause of the occurrence of localized deformation till wrinkling during MDD.

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