scholarly journals Peculiar Porous Aluminum Oxide Films Produced viaElectrochemical Anodizing in Malonic Acid Solution withArsenazo-I Additive

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5118
Author(s):  
Alexander Poznyak ◽  
Gerhard Knörnschild ◽  
Anatoly Karoza ◽  
Małgorzata Norek ◽  
Andrei Pligovka

The influence of arsenazo-I additive on electrochemical anodizing of pure aluminum foil in malonic acid was studied. Aluminum dissolution increased with increasing arsenazo-I concentration. The addition of arsenazo-I also led to an increase in the volume expansion factor up to 2.3 due to the incorporation of organic compounds and an increased number of hydroxyl groups in the porous aluminum oxide film. At a current density of 15 mA·cm–2 and an arsenazo-I concentration 3.5 g·L–1, the carbon content in the anodic alumina of 49 at. % was achieved. An increase in the current density and concentration of arsenazo-I caused the formation of an arsenic-containing compound with the formula Na1,5Al2(OH)4,5(AsO4)3·7H2O in the porous aluminum oxide film phase. These film modifications cause a higher number of defects and, thus, increase the ionic conductivity, leading to a reduced electric field in galvanostatic anodizing tests. A self-adjusting growth mechanism, which leads to a higher degree of self-ordering in the arsenazo-free electrolyte, is not operative under the same conditions when arsenazo-I is added. Instead, a dielectric breakdown mechanism was observed, which caused the disordered porous aluminum oxide film structure.

2003 ◽  
Vol 6 (10) ◽  
pp. B42 ◽  
Author(s):  
Paul G. Miney ◽  
Paula E. Colavita ◽  
Maria V. Schiza ◽  
Ryan J. Priore ◽  
Frederick G. Haibach ◽  
...  

1950 ◽  
Vol 28b (9) ◽  
pp. 541-550 ◽  
Author(s):  
A. J. Dekker ◽  
Helen M. A. Urquhart

Porous aluminum oxide layers may be obtained by anodic oxidation in sulphuric acid. The base of the pores is separated from the metal by a thin insulating barrier layer. The experiments show that the ultimate thickness of the barrier layer remains constant after a critical value has been reached. The dependence of the final thickness on current density, concentration, and temperature has been investigated. It is suggested that an electronic current is involved in the mechanism which limits the growth of the barrier layer.


2007 ◽  
Vol 10 (12) ◽  
pp. C69 ◽  
Author(s):  
Ching-Jung Yang ◽  
Shih-Wei Liang ◽  
Pu-Wei Wu ◽  
Chih Chen ◽  
Jia-Min Shieh

1993 ◽  
Vol 115 (4) ◽  
pp. 615-619 ◽  
Author(s):  
M. Nakanishi ◽  
H. Okuya ◽  
K. Nakajima

The strength of deposited film and the adhesion between the film and the substrate were investigated with deposited aluminum oxide film on iron surface by scratching the surface with a diamond cone. Two types of samples were examined, one with oxide film deposited after cleaning the substrate surface by sputter etching, the other with the film deposited without any sputter etching. It was found that a law similar to Meyers’ for indentation hardness holds between the load and scratch width on the sample examined. These results suggest that by analyzing the scratch data the adhesion strength of the film to the substrate can be estimated together with the hardness of the film itself. Analyses by EPMA (electron probe X-ray microanalyzer) and AES (Auger electron spectroscopy) were conducted to correlate the results obtained by the scratch tests and friction experiments, and it was confirmed that (i) adhesion is improved by sputter etching prior to the deposition of the film; (ii) adhesion decreases considerably due to the progress of oxidation in the vicinity of the interface, which depends markedly on the oxygen concentration in the oxide film; and (iii) there is an optimum thickness of the three-component layer (Fe, Al, and O) formed by atomic mixing at the interface for maximizing the adhesion.


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