Growth and Characterization of a Porous Aluminum Oxide Film Formed on an Electrically Insulating Support

2003 ◽  
Vol 6 (10) ◽  
pp. B42 ◽  
Author(s):  
Paul G. Miney ◽  
Paula E. Colavita ◽  
Maria V. Schiza ◽  
Ryan J. Priore ◽  
Frederick G. Haibach ◽  
...  
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Porous Aluminum ◽  
Aluminum Oxide Film ◽  
Porous Aluminum Oxide

scholarly journals Peculiar Porous Aluminum Oxide Films Produced viaElectrochemical Anodizing in Malonic Acid Solution withArsenazo-I Additive

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5118
Author(s):  
Alexander Poznyak ◽  
Gerhard Knörnschild ◽  
Anatoly Karoza ◽  
Małgorzata Norek ◽  
Andrei Pligovka
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Malonic Acid ◽  
Current Density ◽  
Pure Aluminum ◽  
Film Structure ◽  
Hydroxyl Groups ◽  
Porous Aluminum ◽  
Aluminum Oxide Film ◽  
Porous Aluminum Oxide

The influence of arsenazo-I additive on electrochemical anodizing of pure aluminum foil in malonic acid was studied. Aluminum dissolution increased with increasing arsenazo-I concentration. The addition of arsenazo-I also led to an increase in the volume expansion factor up to 2.3 due to the incorporation of organic compounds and an increased number of hydroxyl groups in the porous aluminum oxide film. At a current density of 15 mA·cm–2 and an arsenazo-I concentration 3.5 g·L–1, the carbon content in the anodic alumina of 49 at. % was achieved. An increase in the current density and concentration of arsenazo-I caused the formation of an arsenic-containing compound with the formula Na1,5Al2(OH)4,5(AsO4)3·7H2O in the porous aluminum oxide film phase. These film modifications cause a higher number of defects and, thus, increase the ionic conductivity, leading to a reduced electric field in galvanostatic anodizing tests. A self-adjusting growth mechanism, which leads to a higher degree of self-ordering in the arsenazo-free electrolyte, is not operative under the same conditions when arsenazo-I is added. Instead, a dielectric breakdown mechanism was observed, which caused the disordered porous aluminum oxide film structure.

Facile fabrication and optical characterization of nanoflake aluminum oxide film with high broadband and omnidirectional transmittance enhancement

2020 ◽  
pp. 110567
Author(s):  
T. Lertvanithphol ◽  
P. Limnonthakul ◽  
C. Hom-on ◽  
P. Jaroenapibal ◽  
C. Chananonnawathorn ◽  
...  
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Optical Characterization ◽  
Aluminum Oxide Film ◽  
Facile Fabrication

Synthesis and Characterization of Aligned ZnO Nanorods on Porous Aluminum Oxide Template

2004 ◽  
Vol 108 (32) ◽  
pp. 11976-11980 ◽  
Author(s):  
Jiansheng Jie ◽  
Guanzhong Wang ◽  
Qingtao Wang ◽  
Yiming Chen ◽  
Xinhai Han ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Zno Nanorods ◽  
Synthesis And Characterization ◽  
Porous Aluminum ◽  
Porous Aluminum Oxide

Characterization of porous aluminum oxide films by metal electrodeposition

1997 ◽  
Vol 42 (1) ◽  
pp. 145-151 ◽  
Author(s):  
I. Serebrennikova ◽  
P. Vanýsek ◽  
V.I. Birss
Keyword(s):  
Aluminum Oxide ◽  
Oxide Films ◽  
Porous Aluminum ◽  
Metal Electrodeposition ◽  
Porous Aluminum Oxide

Fabrication of Anodic Aluminum Oxide Film on Large-Area Glass Substrate

2007 ◽  
Vol 10 (12) ◽  
pp. C69 ◽  
Author(s):  
Ching-Jung Yang ◽  
Shih-Wei Liang ◽  
Pu-Wei Wu ◽  
Chih Chen ◽  
Jia-Min Shieh
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Glass Substrate ◽  
Anodic Aluminum Oxide ◽  
Large Area ◽  
Anodic Aluminum Oxide Film ◽  
Aluminum Oxide Film ◽  
Anodic Aluminum
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