scholarly journals Synthesis of Multilayered DLC Films with Wear Resistance and Antiseizure Properties

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2300
Author(s):  
Yucheng Li ◽  
Jun Enomoto ◽  
Yuki Hirata ◽  
Hiroki Akasaka ◽  
Naoto Ohtake
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor ◽  
High Hardness ◽  
Barrier Properties ◽  
Multilayered Film ◽  
Gas Barrier ◽  
Dlc Film ◽  
Cu Films ◽  
Industrial Sectors ◽  
Cu Film

Diamond-like carbon (DLC) films have attracted considerable interest for application as protective films in diverse industrial parts. This is attributed to their desirable characteristics, such as high hardness, low coefficient of friction, gas-barrier properties, and corrosion resistance. Antiseizure properties, in addition to wear resistance, are required during the die molding of polymer and polymer-matrix composite parts. Graphite films can be easily peeled because the vertically stacked graphene sheets are bonded via weak van der Waals forces. The present study demonstrates the fabrication of multilayered DLC/Cu films, where the Cu film functions as a catalyst for the formation of a graphite-like layer between the DLC and Cu films. The DLC/Cu film was synthesized on a Si (100) substrate via plasma-enhanced chemical vapor deposition and magnetron sputtering. The peelability, wear resistance, microstructure, texture, and cross-section of the film were experimentally analyzed. The results indicated a variation in the peelability with the deposition conditions of the Cu film that comprised particles with diameters of several nanometers. The DLC film at the interface in contact with the Cu film was transformed into a graphite-like state i.e., graphitized. The surface of the multilayered film exhibited antiseizure properties with the peeling of the upper DLC film. The multilayered film also exhibited wear resistance owing to the repeated appearances of a new DLC film. It is expected that the wear-resistant films with antiseizure properties demonstrated in the present study will be utilized in various industrial sectors.

scholarly journals Plasma-Enhanced Chemical Vapor Deposition of Indene for Gas Separation Membrane

2019 ◽  
Vol 19 (1) ◽  
pp. 47 ◽  
Author(s):  
Myat Kyaw ◽  
Shinsuki Mori ◽  
Nathaniel Dugos ◽  
Susan Roces ◽  
Arnel Beltran ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Gas Barrier ◽  
Membrane Performance ◽  
Membrane Characterization ◽  
Separation Membrane ◽  
Zeolite 5A ◽  
Ft Ir

Polyindene (PIn) membrane was fabricated onto a zeolite 5A substrate by using plasma-enhanced chemical vapor deposition (PECVD) at low temperature. Membrane characterization was done by taking Scanning Electron Microscopy (SEM) and FT-IR measurements and the new peak was found in the plasma-derived PIn film. Membrane performance was analyzed by checking permeability of pure gases (H2, N2, and CO2) through the membrane. PECVD-derived PIn membrane showed high gas barrier properties and selectivities of 8.2 and 4.0 for H2/CO2 and H2/N2, respectively, at room temperature

An Investigation of Methods to Improve the Wear Resistance of Gas-Bearing Ceramic Materials

1968 ◽  
Vol 90 (4) ◽  
pp. 829-838
Author(s):  
H. H. Rowe
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor ◽  
High Hardness ◽  
Ceramic Materials ◽  
Gold Plating ◽  
Good Surface ◽  
Irradiation Treatment ◽  
Vapor Deposition Technique ◽  
Good Surface Finish ◽  
Gas Bearing

Ceramic materials, or more particularly aluminum oxides, have found application as a practical gas-bearing material because of the dimensional stability, low coefficient of friction, high hardness, and ability to attain good surface finish that these materials possess. This paper reports on an investigation of a number of methods designed to improve the resistance of aluminum oxide to damage from sliding contact, and hence improve the start-stop life characteristics of gas-bearing assemblies. These methods include heat-treatment, neutron irradiation treatment, gold plating, and coating of alumina surfaces by means of a chemical vapor deposition technique, in order to increase the wear resistance of the material. A brief mention is also made of the effect of machining techniques as they relate to the finish, and hence to the wear resistance, of gas-bearing parts.

Bisethylacetoacetato Cu(II) as a novel metal-organic precursor for Cu film production by plasma-enhanced chemical vapor deposition toward ultra-large-scale integration metallization

1996 ◽  
Vol 11 (5) ◽  
pp. 1051-1060 ◽  
Author(s):  
Soon T. Hwang ◽  
Ilwun Shim ◽  
Kyung O. Lee ◽  
Kyeong S. Kim ◽  
Ju H. Kim ◽  
...  
Keyword(s):  
Large Scale ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Process Conditions ◽  
Organic Precursor ◽  
Cu Films ◽  
Hydrogen Flow ◽  
Cu Film ◽  
Metal Organic ◽  
Scale Integration

Bisethylacetoacetato Cu(II), referred to as Cu(etac)2, was synthesized and used as a novel metal-organic precursor to produce Cu films by PECVD processing. Cu(etac)2 is a nonfluoride compound that is solid at room temperature with reasonable volatility at 120–150 °C of 0.8 Torr. Effects of selected process variables on the characteristics of Cu film deposition were studied. Considered variables were plasma power, hydrogen flow rate, deposition time, substrate temperature, and precursor temperature. The process conditions to give Cu films of a high quality were determined. The electrical resistivity approached 2 μΩ · cm as the Cu film thickness became greater than 2500 Å. The conformality of the Cu film deposition by PECVD was sufficient to result in complete via-hole fillings of wafers patterned for 256 Mb DRAM.

STUDY OF Cu DIFFUSION IN Cu/TaN/SiO2/Si MULTILAYER STRUCTURES

2001 ◽  
Vol 08 (05) ◽  
pp. 527-532 ◽  
Author(s):  
D. H. ZHANG ◽  
S. W. LOH ◽  
C. Y. LI ◽  
P. D. FOO ◽  
JOSEPH XIE ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Copper Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cu Films ◽  
Cu Film ◽  
Different Temperatures ◽  
Metal Organic ◽  
Barrier Metal ◽  
Organic Chemical Vapor Deposition

This paper reports the effect of a flash copper layer, sandwiched between a copper film deposited by metal-organic chemical vapor deposition (MOCVD) and a TaN barrier metal, on copper diffusion through TaN barrier to Si substrate after rapid thermal annealing at different temperatures. It is found that for the structure of CVD Cu/TaN/SiO 2/ Si , which has no flash Cu layer, Cu could diffuse through the 25-nm-thick TaN barrier layer at an annealing temperature of 600°Cfor 180 s. However, by incorporating a flash Cu layer between the CVD Cu film and the TaN barrier, Cu diffusion can be significantly reduced. In addition to Cu , the out-diffusion of Si and oxygen, and the interaction between them can also be reduced by the incorporated flash Cu layer, due likely to the change of the crystallographic orientation of the CVD Cu films.

Morphology and gas barrier properties of thin SiOxcoatings on polycarbonate: Correlations with plasma-enhanced chemical vapor deposition conditions

2000 ◽  
Vol 15 (3) ◽  
pp. 704-717 ◽  
Author(s):  
Ahmet G. Erlat ◽  
Bo-Chy Wang ◽  
Richard J. Spontak ◽  
Yelena Tropsha ◽  
Kevin D. Mar ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Food Packaging ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
High Fracture Toughness ◽  
High Fracture ◽  
Gas Barrier ◽  
Gas Barrier Properties ◽  
Deposition Conditions

Plasma-enhanced chemical vapor deposition of SiOx coatings on thermoplastics provides a viable route for production of transparent composite materials with high fracture toughness and high gas barrier properties, which are important considerations in the food packaging and biomedical device industries. By examining several series of systematically varied SiOx/polycarbonate composites, we have identified design correlations between coating characteristics (thickness, density, surface roughness, and O2 transmission) and deposition conditions (time, power, pressure, and flow rates). Of particular interest is the observation that the thermal activation energy for O2 permeation through these composites increases (by up to 17 kJ/mol) as their barrier efficacy increases.

Influence of Cu film microstructure on MOCVD growth of BN

2015 ◽  
Vol 1726 ◽  
Author(s):  
Michael Snure ◽  
Shivashankar Vangala ◽  
Jodie Shoaf ◽  
Jianjun Hu ◽  
Qing Paduano
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Mechanical Stability ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Substrate Preparation ◽  
Cu Films ◽  
Cu Film ◽  
Film Microstructure ◽  
The Impact

ABSTRACTBoron nitride is of great interest as a 2 dimensional (2D) insulator for use as an atomically flat substrate, gate dielectric and tunneling barrier. At this point the most promising and widely used approach for growth of mono-to-few layer BN is metal catalyzed chemical vapor deposition (CVD). Bulk Cu foil has been the most popular metal substrate for growth of h-BN and graphene, as such there are well developed processes for substrate preparation and growth. As an alternative thin Cu films deposited on an insulating substrate have some advantages over foil, including more uniform thermal contact with substrate heater, better mechanical stability, transfer free processing, and selective area growth. However, Cu films deposited on SiO2 present their own unique problems like Cu SiO2 stability and small Cu grain size. Here we present results on the growth on few-layer BN by metal organic chemical vapor deposition (MOCVD) on Cu thin films on SiO2/Si. We explore the effects of substrate preparation and annealing conditions on the Cu morphology in order to understand the impact on the BN. To minimize the effects of Cu SiO2 interdiffusion, we investigate the use of a Ni buffer layers. BN films were studied after transfer to SiO2/Si films using Raman and AFM to determine the impact of Cu film microstructure on the morphology of few layer BN films.

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