scholarly journals 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3407 ◽  
Author(s):  
Massimo Zimbone ◽  
Marcin Zielinski ◽  
Corrado Bongiorno ◽  
Cristiano Calabretta ◽  
Ruggero Anzalone ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Growth Parameters ◽  
Stacking Faults ◽  
Phase Boundaries ◽  
Compliant Substrate ◽  
Patterned Substrate ◽  
Inverted Pyramid ◽  
Careful Control ◽  
Cubic Silicon Carbide

This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/Si interface, from reaching the surface. We investigated the effect of the size of the inverted pyramid on the epilayer quality. We noted that anti-phase boundaries (APBs) develop between adjacent faces of the pyramid and that the SiC/Si interfaces have the same polarity on both pyramid faces. The structure of the heterointerface was investigated. Moreover, due to the emergence of APB at the vertex of the pyramid, voids buried on the epilayer form. We demonstrated that careful control of the growth parameters allows modification of the height of the void and the density of APBs, improving SiC epitaxy quality.

Refinement of polycrystalline disordered cubic silicon carbide by structure modeling and X-ray diffraction simulation

1995 ◽  
Vol 210 (10) ◽  
Author(s):  
B. Palosz ◽  
S. Stel'makh ◽  
S. Gierlotka
Keyword(s):  
Silicon Carbide ◽  
Stacking Faults ◽  
Structure Modeling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Silicon Carbide ◽  
Diffraction Effects

AbstractDisordering in SiC is analyzed both theoretically and experimentally. Classification of the stacking faults into (i) intrinsic, (ii) twin-like and (iii) extrinsic faults is proposed. This classification correlates well with distinct diffraction effects, characteristic for specific faults. Based on proposed classification, the disordering in SiC

Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films

2012 ◽  
Vol 717-720 ◽  
pp. 149-152 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Canino ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Thermal Annealing ◽  
Growth Parameters ◽  
Stacking Faults ◽  
Growth Processes ◽  
Equilibrium Conditions ◽  
The Impact

In this paper we study the surface morphology of <11-20> 4° degree off, silicon terminated, 4H Silicon Carbide (4H-SiC) in terms of growth parameters and post growth argon thermal annealing. We find that out-of-equilibrium conditions favor the reduction of the surface roughness. Furthermore, we find preliminary indications that the same growth parameters that lead to the reduction of the surface roughness promote also a reduction of (1,3) and (4,4) stacking faults density.

Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications

2012 ◽  
Vol 717-720 ◽  
pp. 517-520 ◽  
Author(s):  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Nicolò Piluso ◽  
Andrea Severino ◽  
Andrea Canino ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Stress Field ◽  
Silicon Substrate ◽  
Stress Fields ◽  
Stress Model ◽  
Heteroepitaxial Growth ◽  
Device Applications ◽  
Cubic Silicon Carbide

Using several characterization techniques (μ-Raman, mechanical profilometer and microstructure deflections) together with a recent stress model[ ] we study the heteroepitaxial growth of cubic silicon carbide on silicon (100). We show that the observed inconsistency between experimental results might be the result of defects generated on the silicon substrate during the carbonization process. In such a situation wafer curvature techniques do not allow the determination of the stress field in the grown films neither quantitatively nor qualitatively.

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 355-358 ◽  
Author(s):  
Rii Hirano ◽  
Michio Tajima ◽  
Kohei M. Itoh
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Room Temperature ◽  
Stacking Faults ◽  
Room Temperature Photoluminescence ◽  
Pl Spectra ◽  
Intensity Mapping ◽  
Pl Mapping ◽  
Pl Intensity ◽  
Cubic Silicon Carbide

We investigated the optical properties of stacking faults (SFs) in cubic silicon carbide by photoluminescence (PL) spectroscopy and mapping. The room-temperature PL spectra consisted of a 2.3 eV peak due to nitrogen and two undefined broad peaks at 1.7 eV and 0.95 eV. On the PL intensity mapping for the 2.3 eV peak, SFs appeared as dark lines. SFs which expose carbon atoms (SFC) and silicon atoms (SFSi) on the surface appeared as bright lines and dark lines, respectively, in PL mapping for the 1.7 eV and 0.95 eV peaks. We believe the two undefined peaks are associated with SFC. This technique allows us to detect SFs nondestructively and to distinguish between SFC and SFSi. We further suggest the presence of inhomogeneous stress around SFCs based on the broadening of the 2.3 eV peak.

Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions

2021 ◽  
Vol 129 (23) ◽  
pp. 235703
Author(s):  
Pei Li ◽  
Xiaolan Yan ◽  
Jiabin Chen ◽  
Peng Dong ◽  
Bing Huang
Keyword(s):  
Silicon Carbide ◽  
Stacking Faults

Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide
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