Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide

Intrinsic Defects in Cubic Silicon Carbide

1997 ◽  
Vol 162 (1) ◽  
pp. 173-198 ◽  
Author(s):  
H. Itoh ◽  
A. Kawasuso ◽  
T. Ohshima ◽  
M. Yoshikawa ◽  
I. Nashiyama ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide

scholarly journals Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2487 ◽  
Author(s):  
Michael Schöler ◽  
Clemens Brecht ◽  
Peter J. Wellmann
Keyword(s):  
Silicon Carbide ◽  
Point Defects ◽  
Nitrogen Vacancy ◽  
Temperature Dependent ◽  
Intrinsic Defects ◽  
Intermediate Band ◽  
Induced Changes ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications, such as intermediate-band solar cells, photoelectrochemical water splitting, and quantum key distribution, just to name a few. All these applications critically depend on further understanding of defect behavior at the atomic level and the possibility to actively control distinct defects. In this work, dopants as well as intrinsic defects were introduced into the 3C-SiC material in situ during sublimation growth. A series of isochronal temperature treatments were performed in order to investigate the temperature-dependent annealing behavior of point defects. The material was analyzed by temperature-dependent photoluminescence (PL) measurements. In our study, we found a variation in the overall PL intensity which can be considered as an indication of annealing-induced changes in structure, composition or concentration of point defects. Moreover, a number of dopant-related as well as intrinsic defects were identified. Among these defects, there were strong indications for the presence of the negatively charged nitrogen vacancy complex (NC–VSi)−, which is considered a promising candidate for spin qubits.

scholarly journals Релаксация механических напряжений в эпитаксиальных пленках кубического карбида кремния на кремниевых подложках с буферным пористым слоем

2021 ◽  
Vol 91 (6) ◽  
pp. 986
Author(s):  
А.С. Гусев ◽  
Н.И. Каргин ◽  
С.М. Рындя ◽  
Г.К. Сафаралиев ◽  
Н.В. Сигловая ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Residual Stresses ◽  
Mechanical Stress ◽  
Essential Role ◽  
Theoretical Study ◽  
Study Data ◽  
Stress Distributions ◽  
Experimental Values ◽  
Cubic Silicon Carbide

The results of the work quantitatively and qualitatively illuminate the processes of relaxation of misfit stresses arising during the epitaxy of cubic silicon carbide on silicon. Analysis of stress distributions of mechanical stress in 3C-SiC / Si and 3C-SiC / por-Si heterostructures is carried out. The essential role of the porous buffer layer in reducing the magnitude of misfit stresses is shown. The theoretical study data are confirmed by the experimental values of residual stresses in 3C-SiC / Si and 3C-SiC / por-Si samples.

Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Mark D. Allendorf ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

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