scholarly journals Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3236
Author(s):  
Kurasaki ◽  
Tanaka ◽  
Sugisaki ◽  
Matsuda ◽  
Koretomo ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Oxygen Vacancies ◽  
Lower Layer ◽  
Rf Magnetron Sputtering ◽  
Double Layers ◽  
Thin Film Device ◽  
Oxygen Ratio

We have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for the upper layer contains more oxygen, and it is assumed that the former contains more oxygen vacancies, whereas the latter contains fewer vacancies. The characteristic is explained by drift of oxygen and is stable without forming operation because additional structures such as filament are unnecessary. The fabrication is easy because the double layers are successively deposited simply by changing the oxygen ratio in the chamber.

Electron Conduction of Nd0.6Sr0.4FeO3−δ Thin Film with Oxygen Vacancies Prepared by RF Magnetron Sputtering

2017 ◽  
Vol 86 (7) ◽  
pp. 074704 ◽  
Author(s):  
Wataru Namiki ◽  
Takashi Tsuchiya ◽  
Makoto Takayanagi ◽  
Shoto Furuichi ◽  
Makoto Minohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Electron Conduction

Development of a highly transparent, low-resistance lithium-doped nickel oxide triple-layer film deposited by magnetron sputtering

2017 ◽  
Vol 53 (10) ◽  
pp. 1634-1637 ◽  
Author(s):  
Chia-Ching Wu ◽  
Wei-Chen Shih
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nickel Oxide ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Glass Substrates ◽  
Triple Layer ◽  
Conductive Oxide

This research presents a triple-layer transparent conductive oxide thin film, with a lithium-doped nickel oxide/silver/lithium-doped nickel oxide (L-NiO/Ag/L-NiO) structure using radio-frequency (RF) magnetron sputtering on glass substrates.

Growth of Highly (112) Oriented Cu2ZnSnS4 Thin Film on Sapphire Substrate by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 1640 ◽  
Author(s):  
Ning Song ◽  
Xiaojing Hao ◽  
Binesh Puthen-Veettil ◽  
Shujuan Huang ◽  
Martin A Green
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Investigation ◽  
Rf Magnetron Sputtering ◽  
Structural Quality ◽  
Radio Frequency Magnetron Sputtering ◽  
Deposition Parameters ◽  
Cu2znsns4 Thin Film ◽  
Czts Thin Films

ABSTRACTFor structural investigation, highly (112) oriented tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates were obtained by radio frequency (RF) magnetron sputtering. The influences of the deposition parameters, such as substrate temperature (Tsub) and working Ar pressure (PAr) on the chemical composition and structural properties of as deposited CZTS films were investigated. The film sputtered at 500°C has the only orientation of (112), also, it bears the best structural quality with pure CZTS phase and an estimated band gap of 1.51eV.

Effects of Oxygen Gas Composition on Nanocolumnar Zinc Oxide Properties Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 783-786
Author(s):  
N. Ameera ◽  
A. Shuhaimi ◽  
S. Najwa ◽  
K.M. Hakim ◽  
M. Mazwan ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Optical Characterization ◽  
Visible Range ◽  
Gas Composition ◽  
Rf Power ◽  
Oxygen Gas ◽  
Oxygen Ratio

Nanocolumnar ZnO was successfully deposited on glass substrate by RF magnetron sputtering. It was performed with a ZnO target with 99.999% purity at RF power of 200 W. The growth temperature was specified at 500°C, with total deposition time of 1 hour. The effects of oxygen gas composition during sputtering process was investigated. Argon to oxygen ratio was varied at Ar10:Ox5, Ar8:Ox7 and Ar5:x10 sccm. Optical characterization on samples indicated that the transmittance though visible range is higher than 80%. Based on morphological property obtained, higher oxygen content exhibited better uniformity and surface roughness. This is due to the reduction of oxygen vacancies in the ZnO layer.

Dielectric and Tunable Properties of Lead Barium Strontium Titanate Thin Films Fabricated by Radio Frequency Magnetron Sputtering Method

2013 ◽  
Vol 652-654 ◽  
pp. 1728-1732
Author(s):  
Zhi Meng Luo ◽  
Xiao Hua Sun ◽  
Shuang Hou ◽  
Ying Yang ◽  
Jun Zou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Loss ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Tunable Properties

The Pb0.25Ba0.15Sr0.6TiO3 (PBST) thin films have been deposited on Pt/Ti/SiO2/Si substrates at different temperatures by radio frequency (rf) magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of PBST thin films were investigated as a function of deposition temperature. It’s found that the orientation of PBST thin films was adjusted by deposition temperature. The PBST thin film deposited at room temperature shows (100) preferred orientation and its dielectric constant and tunability are higher than that of PBST thin film deposited at 450 °C. Furthermore, the PBST thin film deposited at room temperature shows lower dielectric loss and leakage current, which makes it exhibit higher FOM of 49.47 for its appropriate tunability of 44.38% and low dielectric loss of 0.00897.

Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

2021 ◽  
Vol 127 (7) ◽  
Author(s):  
Du-Cheng Tsai ◽  
Feng-Kuan Chen ◽  
Zue-Chin Chang ◽  
Bing-Hau Kuo ◽  
Erh-Chiang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Al2o3 Doping

125MeV Si9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering
Sign in / Sign up

Export Citation Format

Share Document