Development of a highly transparent, low-resistance lithium-doped nickel oxide triple-layer film deposited by magnetron sputtering

2017 ◽  
Vol 53 (10) ◽  
pp. 1634-1637 ◽  
Author(s):  
Chia-Ching Wu ◽  
Wei-Chen Shih
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nickel Oxide ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Glass Substrates ◽  
Triple Layer ◽  
Conductive Oxide

This research presents a triple-layer transparent conductive oxide thin film, with a lithium-doped nickel oxide/silver/lithium-doped nickel oxide (L-NiO/Ag/L-NiO) structure using radio-frequency (RF) magnetron sputtering on glass substrates.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Properties of ZnS Films Deposited by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 602-603 ◽  
pp. 966-969
Author(s):  
Lei Zhang ◽  
Jian Huang ◽  
Hui Min Yang ◽  
Ke Tang ◽  
Mei Ai Lin ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Uv Visible ◽  
Zns Films

In this work, zinc sulfide (ZnS) thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates. The effects of sputtering power, working pressure, substrate temperature and annealing treatment on the structural and optical properties of ZnS films were studied using X-ray diffraction and UV-visible spectrometer in detailed.

Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering

2016 ◽  
Vol 306 ◽  
pp. 346-350 ◽  
Author(s):  
N. Khemasiri ◽  
S. Jessadaluk ◽  
C. Chananonnawathorn ◽  
S. Vuttivong ◽  
T. Lertvanithphol ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Tantalum Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Band Engineering ◽  
Reactive Gas
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