Growth of Highly (112) Oriented Cu2ZnSnS4 Thin Film on Sapphire Substrate by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 1640 ◽  
Author(s):  
Ning Song ◽  
Xiaojing Hao ◽  
Binesh Puthen-Veettil ◽  
Shujuan Huang ◽  
Martin A Green
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Investigation ◽  
Rf Magnetron Sputtering ◽  
Structural Quality ◽  
Radio Frequency Magnetron Sputtering ◽  
Deposition Parameters ◽  
Cu2znsns4 Thin Film ◽  
Czts Thin Films

ABSTRACTFor structural investigation, highly (112) oriented tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates were obtained by radio frequency (RF) magnetron sputtering. The influences of the deposition parameters, such as substrate temperature (Tsub) and working Ar pressure (PAr) on the chemical composition and structural properties of as deposited CZTS films were investigated. The film sputtered at 500°C has the only orientation of (112), also, it bears the best structural quality with pure CZTS phase and an estimated band gap of 1.51eV.

Epitaxial growth of Cu2ZnSnS4 thin film on Si by radio frequency magnetron sputtering

2020 ◽  
Vol 116 (12) ◽  
pp. 123901 ◽  
Author(s):  
Ning Song ◽  
Martin A. Green ◽  
Kaiwen Sun ◽  
Yicong Hu ◽  
Chang Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Epitaxial Growth ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Cu2znsns4 Thin Film

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering

2008 ◽  
Vol 52 (5) ◽  
pp. 813-816 ◽  
Author(s):  
R. Navamathavan ◽  
Chi Kyu Choi ◽  
Eun-Jeong Yang ◽  
Jae-Hong Lim ◽  
Dae-Kue Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thin Film Transistors ◽  
Radio Frequency Magnetron ◽  
Zno Thin Film ◽  
Radio Frequency Magnetron Sputtering

ZnO thin film synthesis by reactive radio frequency magnetron sputtering

2014 ◽  
Vol 318 ◽  
pp. 2-5 ◽  
Author(s):  
Volkan Şenay ◽  
Suat Pat ◽  
Şadan Korkmaz ◽  
Tuna Aydoğmuş ◽  
Saliha Elmas ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Zno Thin Film ◽  
Radio Frequency Magnetron Sputtering ◽  
Film Synthesis
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