scholarly journals The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2160 ◽  
Author(s):  
Chunzi Zhang ◽  
Ozan Gunes ◽  
Yuanshi Li ◽  
Xiaoyu Cui ◽  
Masoud Mohammadtaheri ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dc Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Metal Insulator ◽  
Insulator Metal Transition ◽  
Vo2 Thin Films ◽  
Different Thickness

In this work, VO2 thin films were deposited on Si wafers (onto (100) surface) by DC magnetron sputtering under different cathode bias voltages. The effects of substrate biasing on the structural and optical properties were investigated. The results show that the metal–insulator transition (MIT) temperature of VO2 thin films can be increased up to 14 K by applying a cathode bias voltage, compared to deposition conditions without any bias. The decrease in the transition efficiency and increase in the transition temperature are attributed to the enlarged grain size, increased defects, and the residual stress in the VO2 thin films induced by biasing. The optical transmittance measurements for different thickness films indicate an attenuation coefficient of 3.1 × 107 m−1 at 2000 nm or an extinction coefficient of 4.9 in the metal phase. The optical transmittance vs wavelength characteristics point to an indirect bandgap of 0.6 ± 0.05 eV and significant scattering in the bulk and/or at the interface.

scholarly journals Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5132
Author(s):  
Chunzi Zhang ◽  
Ozan Gunes ◽  
Yuanshi Li ◽  
Xiaoyu Cui ◽  
Masoud Mohammadtaheri ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Typographical Error ◽  
Dc Magnetron Sputtering ◽  
Transition Behavior ◽  
Insulator Metal Transition ◽  
Vo2 Thin Films

The authors would like to correct a typographical error in their paper [...]

Synthesis and Electrical Resistance Property of Vanadium Oxide Thin Films by DC Magnetron Sputtering

2020 ◽  
Vol 998 ◽  
pp. 185-190
Author(s):  
Ladawan Chotirat ◽  
Sutham Niyomwas ◽  
Sitthisuntorn Supothina ◽  
Witthawat Wongpisan ◽  
Kirati Waree
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Electrical Resistance ◽  
Base Pressure ◽  
Dc Magnetron Sputtering ◽  
Heating And Cooling ◽  
Resistance Property ◽  
Vanadium Oxide Thin Films

Thin films of vanadium oxide were synthesized by DC magnetron sputtering on a glass slide. Process parameters including temperature, argon and oxygen ratio (Ar:O2) and base pressure were investigated. It was found that the control of sputtering base pressure is very important in realizing the pure VO2 (M) thin films. These thin films have grown at low base pressure of 5x10-6 mbar. The results of the valence electron analysis show the outstanding phase of VO2 and a small amount of V2O5 and V2O3 phases. The hysteresis loop of electrical resistance property of the VO2 thin films illustrated the quality of film, which is related to metal-insulator transition phase (MIT) at the transition temperature (Tc) of approximately 63°C. The sample was tested for its electrical properties by a four-probe setup with a temperature controller during heating and cooling cycles.

Comparative Study of the Properties between Transparent Conducting ZnO:Zr and ZnO:Al Films Deposited by DC Magnetron Sputtering

2011 ◽  
Vol 284-286 ◽  
pp. 2182-2186 ◽  
Author(s):  
Hua Fu Zhang ◽  
Han Fa Liu ◽  
Chang Kun Yuan
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Transparent Conducting ◽  
Maximum Value ◽  
Better Than

Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) and aluminium-doped zinc oxide (ZnO:Al) thin films were deposited on glass substrates by direct current (DC) magnetron sputtering at room temperature. The crystallinity of ZnO:Zr and ZnO:Al thin films increases as the target-to-substrate distance decreases, and the crystallinity of ZnO:Zr films is found to be always better than that of ZnO:Al films prepared under the same deposition conditions. As the target-to-substrate distance decreases, the resistivity of both film types decreases greatly while the optical transmittance does not change much with the variation of the distance. When target-to-substrate distance is 4.1 cm, the lowest resistivity of 6.0×10-4Ω·cm and 5.7×10-4Ω·cm was obtained for ZnO:Zr and ZnO:Al films, respectively. The figure of merit arrived at a maximum value of 3.98×10-2Ω for ZnO:Zr films lower than 5×10-2Ω for ZnO:Al films.

scholarly journals PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Sudjatmoko Sudjatmoko ◽  
Suryadi Suryadi ◽  
Widdi Usada ◽  
Tono Wibowo ◽  
Wiryoadi Wiryoadi
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transparent Conductive Oxide ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Aluminium Doping ◽  
Deposited Films ◽  
Heated Glass

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE ZnO THIN FILMS BY DC MAGNETRON SPUTTERING. Transparent and conductive aluminium-doped zinc oxide thin films have been prepared by dc magnetron sputtering using targets composed of ZnO and Al2O3. Polycrystalline ZnO:Al films were deposited onto a heated glass substrate. The surface morphology and crystalline structure, as well as optical and electrical properties of the deposited films were found to depend directly on substrate temperature. From optical and electrical analysis were observed that the optical transmittance and conductivity of the ZnO:Al transparent conductive oxide films increased when deposition temperature was raised from 200 to 400 oC. Films grown on 300 oC substrates showed a high conductivity value of 0.2 x 102 -1cm-1 and a visible transmission of about 85%. The growth temperatures of 300 oC, aluminium doping levels of 0.9 wt.% were preferable to achieve ZnO:Al films with optical and structural qualities as required for solar cell applications.

Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO2 thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79383-79388 ◽  
Author(s):  
H. Y. Xu ◽  
Y. H. Huang ◽  
S. Liu ◽  
K. W. Xu ◽  
F. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Vo2 Thin Films

VO2 thin films are prepared on Si substrates by direct-current (DC) magnetron sputtering at room temperature and annealed in vacuum at different argon pressures.

Sign in / Sign up

Export Citation Format

Share Document