Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO2 thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79383-79388 ◽  
Author(s):  
H. Y. Xu ◽  
Y. H. Huang ◽  
S. Liu ◽  
K. W. Xu ◽  
F. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Vo2 Thin Films

VO2 thin films are prepared on Si substrates by direct-current (DC) magnetron sputtering at room temperature and annealed in vacuum at different argon pressures.

Growth and humidity-dependent electrical properties of bulk-like MoS2 thin films on Si

RSC Advances ◽  
2015 ◽  
Vol 5 (91) ◽  
pp. 74329-74335 ◽  
Author(s):  
Y. J. Liu ◽  
L. Z. Hao ◽  
W. Gao ◽  
Y. M. Liu ◽  
G. X. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Molybdenum Disulfide ◽  
Room Temperature ◽  
Dc Magnetron Sputtering ◽  
Humidity Sensing ◽  
Si Substrates ◽  
Sensing Characteristics

Bulk-like molybdenum disulfide (MoS2) thin films were deposited on Si substrates using a dc magnetron sputtering technique and n-MoS2/p-Si junctions show excellent humidity sensing characteristics at room temperature.

DC Magnetron Sputtering Deposition of Room-Temperature Phase Transition Vanadium Oxide Film

2014 ◽  
Vol 1053 ◽  
pp. 332-336 ◽  
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Room Temperature ◽  
Annealed Film ◽  
Oxide Thin Film ◽  
Temperature Phase ◽  
Dc Magnetron Sputtering ◽  
Main Component

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.

scholarly journals The Importance of Oxygen Vacancies in Nanocrystalline WO3–x Thin Films Prepared by DC Magnetron Sputtering for Achieving High Photoelectrochemical Efficiency

2017 ◽  
Vol 121 (13) ◽  
pp. 7412-7420 ◽  
Author(s):  
Malin B. Johansson ◽  
Andreas Mattsson ◽  
Sten-Eric Lindquist ◽  
Gunnar A. Niklasson ◽  
Lars Österlund
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering

scholarly journals Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5132
Author(s):  
Chunzi Zhang ◽  
Ozan Gunes ◽  
Yuanshi Li ◽  
Xiaoyu Cui ◽  
Masoud Mohammadtaheri ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Typographical Error ◽  
Dc Magnetron Sputtering ◽  
Transition Behavior ◽  
Insulator Metal Transition ◽  
Vo2 Thin Films

The authors would like to correct a typographical error in their paper [...]

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