scholarly journals Stable Logic Operation of Fiber-Based Single-Walled Carbon Nanotube Transistor Circuits Toward Thread-Like CMOS Circuitry

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1878 ◽  
Author(s):  
Jae Heo ◽  
Kyung-Tae Kim ◽  
Seok-Gyu Ban ◽  
Yoon-Jeong Kim ◽  
Daesik Kim ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Contact Resistance ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Cmos Inverter ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
N Doping ◽  
P Type ◽  
Output Capacitance

A fiber-based single-walled carbon nanotube (SWCNT) thin-film-transistor (TFT) has been proposed. We designed complementary SWCNT TFT circuit based on SPICE simulations, with device parameters extracted from the fabricated fiber-based SWCNT TFTs, such as threshold voltage, contact resistance, and off-/gate-leakage current. We fabricated the SWCNTs CMOS inverter circuits using the selective passivation and n-doping processes on a fiber substrate. By comparing the simulation and experimental results, we could enhance the circuit’s performance by tuning the threshold voltage between p-type and n-type TFTs, reducing the source/drain contact resistance and off current level, and maintaining a low output capacitance of the TFTs. Importantly, it was found that the voltage gain, output swing range, and frequency response of the fiber-based inverter circuits can be dramatically improved.

scholarly journals Analysis of contact resistance in single-walled carbon nanotube channel and graphene electrodes in a thin film transistor

2017 ◽  
Vol 4 (1) ◽  
Author(s):  
Jinwook Baek ◽  
Travis G. Novak ◽  
Houngkyung Kim ◽  
Jinsup Lee ◽  
Byoungwook Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Contact Resistance ◽  
Thin Film Transistor ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

Single-Walled Carbon Nanotube Thin Film Transistor Fabricated Using Solution Prepared with 9,9-Dioctyfluorenyl-2,7-diyl–Bipyridine Copolymer

2011 ◽  
Vol 50 (7) ◽  
pp. 070207 ◽  
Author(s):  
Xun Yi ◽  
Hiroaki Ozawa ◽  
Gou Nakagawa ◽  
Tsuyohiko Fujigaya ◽  
Naotoshi Nakashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistor ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Efficient n-Doping and Hole Blocking in Single-Walled Carbon Nanotube Transistors with 1,2,4,5-Tetrakis(tetramethylguanidino)ben-zene

ACS Nano ◽  
2018 ◽  
Vol 12 (6) ◽  
pp. 5895-5902 ◽  
Author(s):  
Severin Schneider ◽  
Maximilian Brohmann ◽  
Roxana Lorenz ◽  
Yvonne J. Hofstetter ◽  
Marcel Rother ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Single Walled Carbon Nanotube ◽  
Carbon Nanotube Transistors ◽  
Single Walled Carbon ◽  
N Doping ◽  
Nanotube Transistors

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

Science ◽  
2015 ◽  
Vol 350 (6256) ◽  
pp. 68-72 ◽  
Author(s):  
Qing Cao ◽  
Shu-Jen Han ◽  
Jerry Tersoff ◽  
Aaron D. Franklin ◽  
Yu Zhu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Contact Resistance ◽  
High Performance ◽  
Contact Length ◽  
Electrical Contacts ◽  
Single Walled Carbon Nanotube ◽  
Device Resistance ◽  
Silicon Transistors ◽  
Nanotube Transistors ◽  
P Type

Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock. We report a single-walled carbon nanotube (SWNT) transistor technology with an end-bonded contact scheme that leads to size-independent contact resistance to overcome the scaling limits of conventional side-bonded or planar contact schemes. A high-performance SWNT transistor was fabricated with a sub–10-nanometer contact length, showing a device resistance below 36 kilohms and on-current above 15 microampere per tube. The p-type end-bonded contact, formed through the reaction of molybdenum with the SWNT to form carbide, also exhibited no Schottky barrier. This strategy promises high-performance SWNT transistors, enabling future ultimately scaled device technologies.

All Printed Edge-Triggered Register Using Single Walled Carbon Nanotube-Based Thin Film Transistor

2012 ◽  
Vol 12 (5) ◽  
pp. 4261-4264 ◽  
Author(s):  
Jinsoo Noh ◽  
Minhun Jung ◽  
Kyunghwan Jung ◽  
Gwangyong Lee ◽  
Soyeon Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistor ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Single-Walled Carbon Nanotube Thin Film Transistor Fabricated Using Solution Prepared with 9,9-Dioctyfluorenyl-2,7-diyl–Bipyridine Copolymer

2011 ◽  
Vol 50 (7R) ◽  
pp. 070207 ◽  
Author(s):  
Xun Yi ◽  
Hiroaki Ozawa ◽  
Gou Nakagawa ◽  
Tsuyohiko Fujigaya ◽  
Naotoshi Nakashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistor ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

scholarly journals Large n- and p-type thermoelectric power factors from doped semiconducting single-walled carbon nanotube thin films

2017 ◽  
Vol 10 (10) ◽  
pp. 2168-2179 ◽  
Author(s):  
Bradley A. MacLeod ◽  
Noah J. Stanton ◽  
Isaac E. Gould ◽  
Devin Wesenberg ◽  
Rachelle Ihly ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Thermoelectric Power ◽  
Thermoelectric Performance ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Large N ◽  
P Type ◽  
Carbon Nanotube Networks

Polymer-free semiconducting carbon nanotube networks demonstrate unprecedented equivalent n- and p-type thermoelectric performance.

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