scholarly journals Assembling Magnetic Nanoparticles on Nanomechanical Resonators for Torque Magnetometry

2020 ◽  
Vol 21 (3) ◽  
pp. 984
Author(s):  
Tayyaba Firdous ◽  
David K. Potter
Keyword(s):  
Single Layer ◽  
Silicon On Insulator ◽  
Magnetic Actuation ◽  
Nanoparticle Arrays ◽  
Magnetic Torque ◽  
Nanomechanical Resonators ◽  
Torque Magnetometry ◽  
Wide Range ◽  
Geometrical Shapes ◽  
Self Assembled

We report a highly compliant process for patterning nanoparticle arrays on micro- and nanomechanical devices. The distinctive step involves the single layer self-assembled nanoparticles on top of released nanomechanical devices. We demonstrate the process by fabricating sizable arrays of nanomechanical devices on silicon-on-insulator substrates, acting as nanomechanical torque magnetometers. Later, the nanoparticles were self-assembled in geometrical shapes on top of the devices by a unique combination of top-down and bottom-up methods. The self-assembled array of nanoparticles successfully showed a magnetic torque signal by magnetic actuation of the magnetometer. This patterning process can be generalized for any shape and for a wide range of nanoparticles on the nanomechanical resonators.

Ab initio calculation on the Optical Properties of AA- Stacked two dimensional Graphene, Silicene, Germanene, and Stanene

2018 ◽  
Vol 1 (1) ◽  
pp. 46-50
Author(s):  
Rita John ◽  
Benita Merlin
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Complex Refractive Index ◽  
Single Layer ◽  
Generalized Gradient ◽  
Electronic Band ◽  
Wide Range ◽  
Optical Region

In this study, we have analyzed the electronic band structure and optical properties of AA-stacked bilayer graphene and its 2D analogues and compared the results with single layers. The calculations have been done using Density Functional Theory with Generalized Gradient Approximation as exchange correlation potential as in CASTEP. The study on electronic band structure shows the splitting of valence and conduction bands. A band gap of 0.342eV in graphene and an infinitesimally small gap in other 2D materials are generated. Similar to a single layer, AA-stacked bilayer materials also exhibit excellent optical properties throughout the optical region from infrared to ultraviolet. Optical properties are studied along both parallel (||) and perpendicular ( ) polarization directions. The complex dielectric function (ε) and the complex refractive index (N) are calculated. The calculated values of ε and N enable us to analyze optical absorption, reflectivity, conductivity, and the electron loss function. Inferences from the study of optical properties are presented. In general the optical properties are found to be enhanced compared to its corresponding single layer. The further study brings out greater inferences towards their direct application in the optical industry through a wide range of the optical spectrum.

scholarly journals In Vitro Cellular Uptake Studies of Self-Assembled Fluorinated Nanoparticles Labelled with Antibodies

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1906
Author(s):  
Mona Atabakhshi-Kashi ◽  
Mónica Carril ◽  
Hossein Mahdavi ◽  
Wolfgang J. Parak ◽  
Carolina Carrillo-Carrion ◽  
...  
Keyword(s):  
Flow Cytometry ◽  
Cellular Uptake ◽  
Hydrophobic Interactions ◽  
Intrinsic Properties ◽  
Wide Range ◽  
Self Assembled ◽  
Uptake Studies ◽  
Targeting Ability ◽  
Fluorinated Nanoparticles

Nanoparticles (NPs) functionalized with antibodies (Abs) on their surface are used in a wide range of bioapplications. Whereas the attachment of antibodies to single NPs to trigger the internalization in cells via receptor-mediated endocytosis has been widely studied, the conjugation of antibodies to larger NP assemblies has been much less explored. Taking into account that NP assemblies may be advantageous for some specific applications, the possibility of incorporating targeting ligands is quite important. Herein, we performed the effective conjugation of antibodies onto a fluorescent NP assembly, which consisted of fluorinated Quantum Dots (QD) self-assembled through fluorine–fluorine hydrophobic interactions. Cellular uptake studies by confocal microscopy and flow cytometry revealed that the NP assembly underwent the same uptake procedure as individual NPs; that is, the antibodies retained their targeting ability once attached to the nanoassembly, and the NP assembly preserved its intrinsic properties (i.e., fluorescence in the case of QD nanoassembly).

Self-Assembled Au Nanoparticle Arrays for Precise Metabolic Assay of Cerebrospinal Fluid

2021 ◽  
Vol 13 (4) ◽  
pp. 4886-4893
Author(s):  
Yuning Wang ◽  
Kun Zhang ◽  
Tongtong Tian ◽  
Weilong Shan ◽  
Liang Qiao ◽  
...  
Keyword(s):  
Cerebrospinal Fluid ◽  
Au Nanoparticle ◽  
Nanoparticle Arrays ◽  
Self Assembled

scholarly journals A Resonant Pressure Microsensor with a Wide Pressure Measurement Range

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 382
Author(s):  
Chao Xiang ◽  
Yulan Lu ◽  
Chao Cheng ◽  
Junbo Wang ◽  
Deyong Chen ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Measurement Range ◽  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Pressure Measurements ◽  
Quality Factors ◽  
Deep Reactive Ion Etching ◽  
Wide Range ◽  
Form Pressure ◽  
Silicon Islands

This paper presents a resonant pressure microsensor with a wide range of pressure measurements. The developed microsensor is mainly composed of a silicon-on-insulator (SOI) wafer to form pressure-sensing elements, and a silicon-on-glass (SOG) cap to form vacuum encapsulation. To realize a wide range of pressure measurements, silicon islands were deployed on the device layer of the SOI wafer to enhance equivalent stiffness and structural stability of the pressure-sensitive diaphragm. Moreover, a cylindrical vacuum cavity was deployed on the SOG cap with the purpose to decrease the stresses generated during the silicon-to-glass contact during pressure measurements. The fabrication processes mainly contained photolithography, deep reactive ion etching (DRIE), chemical mechanical planarization (CMP) and anodic bonding. According to the characterization experiments, the quality factors of the resonators were higher than 15,000 with pressure sensitivities of 0.51 Hz/kPa (resonator I), −1.75 Hz/kPa (resonator II) and temperature coefficients of frequency of 1.92 Hz/°C (resonator I), 1.98 Hz/°C (resonator II). Following temperature compensation, the fitting error of the microsensor was within the range of 0.006% FS and the measurement accuracy was as high as 0.017% FS in the pressure range of 200 ~ 7000 kPa and the temperature range of −40 °C to 80 °C.

scholarly journals Bilayer ventilated labyrinthine metasurfaces with high sound absorption and tunable bandwidth

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jiayuan Du ◽  
Yuezhou Luo ◽  
Xinyu Zhao ◽  
Xiaodong Sun ◽  
Yanan Song ◽  
...  
Keyword(s):  
Sound Absorption ◽  
Air Flow ◽  
Single Layer ◽  
Sound Waves ◽  
Acoustic Metamaterials ◽  
Sound Barrier ◽  
Free Air ◽  
Relative Bandwidth ◽  
Wide Range ◽  
High Sound

AbstractThe recent advent of acoustic metamaterials offers unprecedented opportunities for sound controlling in various occasions, whereas it remains a challenge to attain broadband high sound absorption and free air flow simultaneously. Here, we demonstrated, both theoretically and experimentally, that this problem can be overcome by using a bilayer ventilated labyrinthine metasurface. By altering the spacing between two constituent single-layer metasurfaces and adopting asymmetric losses in them, near-perfect (98.6%) absorption is achieved at resonant frequency for sound waves incident from the front. The relative bandwidth of absorption peak can be tuned in a wide range (from 12% to 80%) by adjusting the open area ratio of the structure. For sound waves from the back, the bilayer metasurface still serves as a sound barrier with low transmission. Our results present a strategy to realize high sound absorption and free air flow simultaneously, and could find applications in building acoustics and noise remediation.

LOW-NOISE SILICON-ON-INSULATOR HALL DEVICES

2004 ◽  
Vol 04 (02) ◽  
pp. L345-L354 ◽  
Author(s):  
Y. HADDAB ◽  
V. MOSSER ◽  
M. LYSOWEC ◽  
J. SUSKI ◽  
L. DEMEUS ◽  
...  
Keyword(s):  
Noise Level ◽  
Low Voltage ◽  
Silicon Layer ◽  
Electrical Current ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Technological Parameters ◽  
Wide Range ◽  
Hall Sensors ◽  
Soi Technology

Hall sensors are used in a very wide range of applications. A very demanding one is electrical current measurement for metering purposes. In addition to high precision and stability, a sufficiently low noise level is required. Cost reduction through sensor integration with low-voltage/low-power electronics is also desirable. The purpose of this work is to investigate the possible use of SOI (Silicon On Insulator) technology for this integration. We have fabricated SOI Hall devices exploring the useful range of silicon layer thickness and doping level. We show that noise is influenced by the presence of LOCOS and p-n depletion zones near the edges of the active zones of the devices. A proper choice of SOI technological parameters and process flow leads to up to 18 dB reduction in Hall sensor noise level. This result can be extended to many categories of devices fabricated using SOI technology.

scholarly journals Self-Assembled Hierarchical CuxO@C18H36O2 Nanoflakes for Superior Fenton-like Catalysis over a Wide Range of pH

ACS Omega ◽  
2021 ◽  
Author(s):  
Ratul Rehman ◽  
Sudip Kumar Lahiri ◽  
Ashraful Islam ◽  
Peng Wei ◽  
Yue Xu
Keyword(s):  
Wide Range ◽  
Self Assembled

A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

2020 ◽  
pp. 1-18
Author(s):  
Florent Torres ◽  
Eric Kerhervé ◽  
Andreia Cathelin ◽  
Magali De Matos
Keyword(s):  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Technology Roadmap ◽  
Wide Range ◽  
28 Nm ◽  
Soi Cmos

Abstract This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

scholarly journals Prediction of Co and Ru Nanocluster Morphology on 2D MoS2 from Interaction Energies

2021 ◽  
Author(s):  
Cara-Lena Nies ◽  
Michael Nolan
Keyword(s):  
Thin Film ◽  
Density Functional ◽  
Bulk Material ◽  
Single Layer ◽  
Metal Substrate ◽  
Single Atom ◽  
Metal Interaction ◽  
Wide Range ◽  
Metal Metal ◽  
Sulphur Vacancy

Layered materials, such as \ce{MoS2}, have a wide range of potential applications due to the properties of a single layer which often differ from the bulk material. They are of particular interest as ultra-thin diffusion barriers in semi-conductor device interconnects and as supports for low dimensional metal catalysts. Understanding the interaction between metals and the \ce{MoS2} monolayer is of great importance when selecting systems for specific applications. In previous studies the focus has been largely on the strength of the interaction between a single atom or a nanoparticle of a range of metals, which has created a significant knowledge gap in understanding thin film nucleation on 2D materials. In this paper, we present a density functional theory (DFT) study of the adsorption of small Co and Ru structures, with up to four atoms, on a monolayer of \ce{MoS2}. We explore how the metal-substrate and metal-metal interactions contribute to the stability of metal clusters on \ce{MoS2}, and how these interactions change in the presence of a sulphur vacancy, to develop insight to allow prediction of thin film morphology. The strength of interaction between the metals and \ce{MoS2} is in the order Co > Ru. The competition between metal-substrate and metal-metal interaction allows us to conclude that 2D structures should be preferred for Co on \ce{MoS2}, while Ru prefers 3D structures on \ce{MoS2}. However, the presence of a sulphur vacancy decreases the metal-metal interaction, indicating that with controlled surface modification 2D Ru structures could be achieved. Based on this understanding, we propose Co on \ce{MoS2} as a suitable candidate for advanced interconnects, while Ru on \ce{MoS2} is more suited to catalysis applications.

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