scholarly journals Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor

Energies ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 2302
Author(s):  
You-Chen Weng ◽  
Chih-Chiang Wu ◽  
Edward Li Chang ◽  
Wei-Hua Chieng
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Power Input ◽  
High Electron ◽  
Power Transfer ◽  
High Electron Mobility ◽  
Minimum Power ◽  
Gan Hemt ◽  
Input Control

In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in a class-E amplifier. Instead of applying a zero voltage switching control, which requires high frequency sampling at a high voltage (>600 V), we developed an innovative control method called the minimum power input control. The output of this minimum power input control can be presented in simple empirical equations allowing the optimal power transfer efficiency for 6.78 MHz resonant wireless power transfer (WPT). In order to reduce the switching loss, a gate drive design for the D-mode GaN HEMT, which is highly influential for the reliability of the resonant WPT, was also produced and described here for circuit designers.

scholarly journals Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1573
Author(s):  
Sheng-Yi Tang
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Experimental Results ◽  
High Electron ◽  
Electrical Characteristics ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Source Voltage

An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to the power switch. To highlight the phenomena of di/dt and dv/dt, this study connected the drain, source, and gate terminals in series with inductors (LD, LS, and LG, respectively). The objective was to explore the effects of di/dt and dv/dt phenomena and operating frequency (fS) on drain-to-source voltage (Vds), drain-to-source current (Ids), and gate-to-source voltage (Vgs). The experimental method comprised two projects: (1) establishment of a measurement system to assess the change of electrical characteristics of the E-mode GaN HEMT and (2) change of the fS and the inductances (i.e., LD, LS, and LG) in the circuit to measure the changes in Vds, Ids, and Vgs, thus summarizing the experimental results. According to the experimental results on electrical characteristics, a gate driver circuit may be designed to drive and protect the E-mode GaN HEMT while being actually applied to a 120-W synchronous buck converter with an output voltage of 12 V and an output current of 10 A.

A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

2019 ◽  
Vol 11 (31) ◽  
pp. 3981-3986 ◽  
Author(s):  
Lei Zhao ◽  
Xinsheng Liu ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Real Time Detection

In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.

scholarly journals Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55835-55838 ◽  
Author(s):  
Xiangzhen Ding ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Baojun Wu ◽  
Yimin Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Sensitive

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

scholarly journals Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications

RSC Advances ◽  
2019 ◽  
Vol 9 (27) ◽  
pp. 15341-15349 ◽  
Author(s):  
Zhiqi Gu ◽  
Jin Wang ◽  
Bin Miao ◽  
Lei Zhao ◽  
Xinsheng Liu ◽  
...  
Keyword(s):  
Surface Modification ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Efficient ◽  
Highly Sensitive ◽  
Amine Groups

We propose a highly efficient surface modification strategy on an AlGaN/GaN high electron mobility transistor, where ethanolamine was utilized to functionalize the surface of GaN and provided amphoteric amine groups for bioassay application.

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

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