High-Density Memristor-CMOS Ternary Logic Family

2020 ◽  
Author(s):  
Xiaoyuan Wang ◽  
Pengfei Zhou ◽  
Jason Eshraghian ◽  
Chih-Yang Lin ◽  
Herbert Ho-Ching Iu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Practical Implementation ◽  
Switching Speed ◽  
High Data ◽  
Fast Switching ◽  
Data Density ◽  
Order Of Magnitude ◽  
High Transconductance ◽  
Logic Functions ◽  
Magnitude Improvement

<div>This paper presents the first experimental demonstration</div><div>of a ternary memristor-CMOS logic family. We systematically</div><div>design, simulate and experimentally verify the primitive</div><div>logic functions: the ternary AND, OR and NOT gates. These are then used to build combinational ternary NAND, NOR, XOR and XNOR gates, as well as data handling ternary MAX and MIN gates. Our simulations are performed using a 50-nm process which are verified with in-house fabricated indium-tin-oxide memristors, optimized for fast switching, high transconductance, and low current leakage. We obtain close to an order of magnitude improvement in data density over conventional CMOS logic, and a reduction of switching speed by a factor of 13 over prior state-of-the-art ternary memristor results. We anticipate extensions of this work can realize practical implementation where high data density is of critical importance.</div>

scholarly journals High-Density Memristor-CMOS Ternary Logic Family

2020 ◽  
Author(s):  
Xiaoyuan Wang ◽  
Pengfei Zhou ◽  
Jason Eshraghian ◽  
Chih-Yang Lin ◽  
Herbert Ho-Ching Iu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Practical Implementation ◽  
Switching Speed ◽  
High Data ◽  
Fast Switching ◽  
Data Density ◽  
Order Of Magnitude ◽  
High Transconductance ◽  
Logic Functions ◽  
Magnitude Improvement

<div>This paper presents the first experimental demonstration</div><div>of a ternary memristor-CMOS logic family. We systematically</div><div>design, simulate and experimentally verify the primitive</div><div>logic functions: the ternary AND, OR and NOT gates. These are then used to build combinational ternary NAND, NOR, XOR and XNOR gates, as well as data handling ternary MAX and MIN gates. Our simulations are performed using a 50-nm process which are verified with in-house fabricated indium-tin-oxide memristors, optimized for fast switching, high transconductance, and low current leakage. We obtain close to an order of magnitude improvement in data density over conventional CMOS logic, and a reduction of switching speed by a factor of 13 over prior state-of-the-art ternary memristor results. We anticipate extensions of this work can realize practical implementation where high data density is of critical importance.</div>

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance

2016 ◽  
Vol 858 ◽  
pp. 1095-1098
Author(s):  
Masayuki Yamamoto ◽  
Yasunori Tanaka ◽  
Tsutomu Yatsuo ◽  
Koji Yano
Keyword(s):  
Switching Speed ◽  
Reverse Transfer ◽  
Switching Device ◽  
Fast Switching ◽  
Static Induction Transistor ◽  
Static Induction ◽  
High Transconductance ◽  
Fast Switching Speed

We investigate a cascode configuration of a normally-on SiC-Buried Gate Static Induction Transistor (SiC-BGSIT) and Si-MOSFET as an alternative switching device of the SiC-MOSFET. It is shown that the transconductance of our cascode device is much higher than that of commercial SiC-MOSFETs while the switching speed is much faster than that of normally-off SiC-BGSITs. The origin of the fast switching speed in this cascode configuration is discussed in terms of a simulated reverse transfer capacitance.

Fast-Switching, High-Contrast Electrochromic Thin Films Prepared Using Layer-by-Layer Assembly of Charged Species

2004 ◽  
Vol 846 ◽  
Author(s):  
Jaime C. Grunlan
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Color Change ◽  
Contrast Ratio ◽  
Deposition Process ◽  
Layer By Layer ◽  
High Contrast ◽  
Switching Speed ◽  
Order Of Magnitude ◽  
Poly Ethylene

ABSTRACTThin films were prepared by depositing alternating layers of tungstate anion (WO42-) and poly(4-vinylpyridine-co-styrene) (PVP-S) onto an electrode from aqueous solutions. These films have very high contrast (CR > 8) relative to equivalent films prepared using poly(ethylene dioxythiophene) (PEDOT), but suffer from slow color change due to poor electrical conductivity. The switching time of the tungstate-based films was decreased by an order of magnitude, from 30 seconds down to three, by adding layers of indium tin oxide (ITO) particles stabilized with poly(diallyldimethylammonium chloride) (PDDA). In this case, a four-layer repeating structure was created (i.e., PVP-S and PDDA-ITO were each deposited every fourth layer). Unlike tungstate, ITO has a high intrinsic conductivity (∼ 104 S/cm) that accounts for the dramatic increase in the switching speed. It is only through the nanometer-scale control of film architecture, provided with the layer-by-layer (LbL) deposition process, that switching speed and contrast ratio can be optimized simultaneously.

scholarly journals Incremental Construction of Generalized Voronoi Diagrams on Pointerless Quadtrees

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
Quanjun Yin ◽  
Long Qin ◽  
Xiaocheng Liu ◽  
Yabing Zha
Keyword(s):  
Voronoi Diagrams ◽  
Surrounding Area ◽  
Repair Mechanism ◽  
Local Repair ◽  
Order Of Magnitude ◽  
Generalized Voronoi Diagrams ◽  
Incremental Construction ◽  
Coarse To Fine ◽  
Multiple Granularities ◽  
Magnitude Improvement

In robotics, Generalized Voronoi Diagrams (GVDs) are widely used by mobile robots to represent the spatial topologies of their surrounding area. In this paper we consider the problem of constructing GVDs on discrete environments. Several algorithms that solve this problem exist in the literature, notably the Brushfire algorithm and its improved versions which possess local repair mechanism. However, when the area to be processed is very large or is of high resolution, the size of the metric matrices used by these algorithms to compute GVDs can be prohibitive. To address this issue, we propose an improvement on the current algorithms, using pointerless quadtrees in place of metric matrices to compute and maintain GVDs. Beyond the construction and reconstruction of a GVD, our algorithm further provides a method to approximate roadmaps in multiple granularities from the quadtree based GVD. Simulation tests in representative scenarios demonstrate that, compared with the current algorithms, our algorithm generally makes an order of magnitude improvement regarding memory cost when the area is larger than210×210. We also demonstrate the usefulness of the approximated roadmaps for coarse-to-fine pathfinding tasks.

Synthesis and Characterization of Polyaniline Film

2011 ◽  
Vol 239-242 ◽  
pp. 1382-1385
Author(s):  
Na Xu ◽  
Xiao Dong Shen ◽  
Sheng Cui
Keyword(s):  
Ammonium Persulfate ◽  
Pani Film ◽  
Cyclic Voltammograms ◽  
Ultrasonic Dispersion ◽  
Switching Speed ◽  
Color Changes ◽  
Fast Switching ◽  
Ft Ir ◽  
The Relationship

The electrochromic PANI film was prepared by emulsion polymerization with dodecyl benzene sulphonic acid (DBSA) as dopant and ammonium persulfate (APS) as initiator. Ultrasonic dispersion was adopted in the polymerization. The electrochemical properties, the surface morphology and structure of the prepared PANI film was characterized by means of Fourier Transform infrared spectroscopy (FT-IR), cyclic voltammograms (CV) and field emission scanning electron microscope (FE-SEM), respectively. The relationship between the morphology and properties of PANI film was detailedly discussed. The PANI film exhibited an excellent electrochromism with reversible color changes form yellow to purple. The PANI film also had quite good reaction kinetics with fast switching speed, and the response time for oxidation and reduction were 65 ms and 66 ms, respectively.

scholarly journals The Array of Long Baseline Antennas for Taking Radio Observations from the Sub-Antarctic

2020 ◽  
Vol 09 (04) ◽  
pp. 2050019
Author(s):  
H. C. Chiang ◽  
T. Dyson ◽  
E. Egan ◽  
S. Eyono ◽  
N. Ghazi ◽  
...  
Keyword(s):  
Low Frequency ◽  
Neutral Hydrogen ◽  
Radio Frequency Interference ◽  
Marion Island ◽  
Radio Observations ◽  
Long Baseline ◽  
Galactic Emission ◽  
Operating Frequency Range ◽  
Order Of Magnitude ◽  
Magnitude Improvement

Measurements of redshifted 21[Formula: see text]cm emission of neutral hydrogen at [Formula: see text][Formula: see text]MHz have the potential to probe the cosmic “dark ages,” a period of the universe’s history that remains unobserved to date. Observations at these frequencies are exceptionally challenging because of bright Galactic foregrounds, ionospheric contamination, and terrestrial radio-frequency interference. Very few sky maps exist at [Formula: see text][Formula: see text]MHz, and most have modest resolution. We introduce the Array of Long Baseline Antennas for Taking Radio Observations from the Sub-Antarctic (ALBATROS), a new experiment that aims to image low-frequency Galactic emission with an order-of-magnitude improvement in resolution over existing data. The ALBATROS array will consist of antenna stations that operate autonomously, each recording baseband data that will be interferometrically combined offline. The array will be installed on Marion Island and will ultimately comprise 10 stations, with an operating frequency range of 1.2–125[Formula: see text]MHz and maximum baseline lengths of [Formula: see text][Formula: see text]km. We present the ALBATROS instrument design and discuss pathfinder observations that were taken from Marion Island during 2018–2019.

scholarly journals Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

2021 ◽  
Author(s):  
Emerson Roberto Santos ◽  
Thiago de Carvalho Fullenbach ◽  
Marina Sparvoli Medeiros ◽  
Luis da Silva Zambom ◽  
Roberto Koji Onmori ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Electrical Current ◽  
High Threshold ◽  
Diamond Coatings ◽  
Ito Thin Films ◽  
Order Of Magnitude

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.

Improved electrochromic performance of a radio frequency magnetron sputtered NiO thin film with high optical switching speed

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79668-79680 ◽  
Author(s):  
K. S. Usha ◽  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
Vasant Sathe ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Thin Film ◽  
Radio Frequency ◽  
Optical Switching ◽  
Switching Time ◽  
Rf Magnetron Sputtering ◽  
Optical Modulation ◽  
Switching Speed ◽  
Coloration Efficiency ◽  
Fast Switching ◽  
Nio Thin Film

A nickel oxide (NiO) thin film with better reversibility, high optical modulation, and enhanced coloration efficiency with fast switching time was prepared using radio frequency (rf) magnetron sputtering technique.

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