scholarly journals Enhance Reliability of Semiconductor Devices in Power Converters

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2068
Author(s):  
Minh Hoang Nguyen ◽  
Sangshin Kwak
Keyword(s):  
Semiconductor Devices ◽  
Thermal Control ◽  
Temperature Cycling ◽  
Future Research ◽  
Comprehensive Overview ◽  
Estimation Techniques ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Power Electronics Converter ◽  
Application Fields

As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power, electric vehicles, drive system, etc., power semiconductor devices draw great concern in terms of reliability. Owing to the wide utilization of power semiconductor devices in various power applications, especially insulated gate bipolar transistors (IGBTs), power semiconductor devices have been studied extensively regarding increasing reliability methods. This study comparatively reviews recent advances in the area of reliability research for power semiconductor devices, including condition monitoring (CM), active thermal control (ATC), and remaining useful lifetime (RUL) estimation techniques. Different from previous review studies, this technical review is carried out with the aim of providing a comprehensive overview of the correlation between various enhancing reliability techniques and discussing the corresponding merits and demerits by using 144 related up-to-date papers. The structure and failure mechanism of power semiconductor devices are first investigated. Different failure indicators and recent associated CM techniques are then compared. The ATC approaches following the type of converter systems are further summarized. Furthermore, RUL estimation techniques are surveyed. This paper concludes with summarized challenges for future research opportunities regarding reliability improvement.

A Wire-Bondless Packaging Platform for Silicon Carbide Power Semiconductor Devices

2018 ◽  
Vol 140 (3) ◽  
Author(s):  
Liang Yin ◽  
Christopher Kapusta ◽  
Arun Gowda ◽  
Kaustubh Nagarkar
Keyword(s):  
Silicon Carbide ◽  
Storage Temperature ◽  
Semiconductor Devices ◽  
Temperature Cycling ◽  
Limiting Factors ◽  
Switching Loss ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Renewable Power ◽  
Wire Bonds

As silicon carbide (SiC) power semiconductor devices continue to mature for market adoption, innovative power electronics packaging designs and materials are needed. Wire-bonding loop is one of the limiting factors in traditional module packaging methods. Wire-bondless packaging methods have been demonstrated with low losses and to allow integration of gate drive circuit. In this paper, a wire-bondless packaging platform, referred to as power overlay kiloWatt (POL-kW), for SiC devices is presented. The packaging platform is intended for motor drives and power conversion in automotive, aerospace, and renewable power applications. POL-kW module's electrical and thermal performances are first summarized from previous experimental evaluations and numerical simulations. Although some of the evaluations were made using Si and Si–SiC hybrid modules, the results are applicable to SiC modules. Compared with aluminum wire-bonds, the utilization of polyimide-based Cu via interconnections resulted in much reduced parasitic inductance, contributing to significantly lower switching loss and less voltage overshoot. The POL-kW module with integrated heat sinks showed low thermal resistance, which was further reduced by double-sided cooling. Recent reliability results are presented, including high-temperature storage, temperature cycling, and power cycling.

Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

2014 ◽  
Vol 134 (6) ◽  
pp. 432-433
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Keisuke Yamashiro ◽  
Yuji Hayase ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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