GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices
Keyword(s):
Recent results of GaN bulk growth performed in Poland are presented. Two technologies are described in detail: halide vapor phase epitaxy and basic ammonothermal. The processes and their results (crystals and substrates) are demonstrated. Some information about wafering procedures, thus, the way from as-grown crystal to an epi-ready wafer, are shown. Results of other groups in the world are briefly presented as the background for our work.
2011 ◽
Vol 54
(6)
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pp. 376-380
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Keyword(s):
2009 ◽
Vol 48
(9)
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pp. 095502
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Keyword(s):
2017 ◽
Vol 225
(4)
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pp. 324-335
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Keyword(s):
2019 ◽
Vol 16
(4)
◽
pp. 429-443