Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

2006 ◽  
Vol 88 (15) ◽  
pp. 153105 ◽  
Author(s):  
A. Fissel ◽  
D. Kühne ◽  
E. Bugiel ◽  
H. J. Osten
Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1342
Author(s):  
Karolina Grabianska ◽  
Piotr Jaroszynski ◽  
Aneta Sidor ◽  
Michal Bockowski ◽  
Malgorzata Iwinska

Recent results of GaN bulk growth performed in Poland are presented. Two technologies are described in detail: halide vapor phase epitaxy and basic ammonothermal. The processes and their results (crystals and substrates) are demonstrated. Some information about wafering procedures, thus, the way from as-grown crystal to an epi-ready wafer, are shown. Results of other groups in the world are briefly presented as the background for our work.


AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042154 ◽  
Author(s):  
Kazuo Uchida ◽  
Ken-ichi Yoshida ◽  
Dongyuan Zhang ◽  
Atsushi Koizumi ◽  
Shinji Nozaki

2009 ◽  
Vol 95 (24) ◽  
pp. 242101 ◽  
Author(s):  
Roghaiyeh Ravash ◽  
Jürgen Bläsing ◽  
Thomas Hempel ◽  
Martin Noltemeyer ◽  
Armin Dadgar ◽  
...  

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  

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