System for Bulk Growth of Gallium Nitride. Vapor Phase Epitaxy of Gallium Nitride by Gallium Arc Evaporation

2005 ◽  
Author(s):  
Sten J. Heikman ◽  
Umesh K. Mishra
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Bulk Growth ◽  
Arc Evaporation

scholarly journals GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1342
Author(s):  
Karolina Grabianska ◽  
Piotr Jaroszynski ◽  
Aneta Sidor ◽  
Michal Bockowski ◽  
Malgorzata Iwinska
Keyword(s):  
Vapor Phase ◽  
Grown Crystal ◽  
Electronic Devices ◽  
Vapor Phase Epitaxy ◽  
Single Crystalline ◽  
Bulk Growth ◽  
The World ◽  
The Way

Recent results of GaN bulk growth performed in Poland are presented. Two technologies are described in detail: halide vapor phase epitaxy and basic ammonothermal. The processes and their results (crystals and substrates) are demonstrated. Some information about wafering procedures, thus, the way from as-grown crystal to an epi-ready wafer, are shown. Results of other groups in the world are briefly presented as the background for our work.

Hydride vapor phase epitaxy for gallium nitride substrate

2019 ◽  
Vol 40 (10) ◽  
pp. 101801 ◽  
Author(s):  
Jun Hu ◽  
Hongyuan Wei ◽  
Shaoyan Yang ◽  
Chengming Li ◽  
Huijie Li ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

2003 ◽  
Vol 83 (4) ◽  
pp. 644-646 ◽  
Author(s):  
B. A. Haskell ◽  
F. Wu ◽  
M. D. Craven ◽  
S. Matsuda ◽  
P. T. Fini ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Defect Reduction ◽  
Lateral Epitaxial Overgrowth

Growth of gallium nitride by hydride vapor-phase epitaxy

1997 ◽  
Vol 178 (1-2) ◽  
pp. 147-156 ◽  
Author(s):  
R.J. Molnar ◽  
W. Götz ◽  
L.T. Romano ◽  
N.M. Johnson
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence

1998 ◽  
Vol 73 (24) ◽  
pp. 3583-3585 ◽  
Author(s):  
E. M. Goldys ◽  
T. Paskova ◽  
I. G. Ivanov ◽  
B. Arnaudov ◽  
B. Monemar
Keyword(s):  
Gallium Nitride ◽  
Direct Observation ◽  
Vapor Phase ◽  
Large Scale ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Atomic Arrangements and Orientations of Aligned Gallium-Nitride Nanoneedles Grown by Using Hydride Vapor Phase Epitaxy

2017 ◽  
Vol 67 (1) ◽  
pp. 30-35
Author(s):  
Ha Young LEE ◽  
Injun JEON ◽  
Ji-yeon NOH ◽  
Kyung-won LIM ◽  
Hyung Soo AHN ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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