scholarly journals Performance Analysis of a Reduced Form-Factor High Accuracy Three-Axis Teslameter

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1230 ◽  
Author(s):  
Johann Cassar ◽  
Andrew Sammut ◽  
Nicholas Sammut ◽  
Marco Calvi ◽  
Sasa Spasic ◽  
...  
Keyword(s):  
Analog Signal ◽  
Reduced Form ◽  
Hall Probe ◽  
Signal Conditioning ◽  
Cross Sectional ◽  
New Instrument ◽  
Absolute Encoder ◽  
Paul Scherrer ◽  
Signal Conditioning Circuitry

In the framework of the SwissFEL project at the Paul Scherrer Institute (PSI), a Hall probe bench is being developed for the high-precision magnetic characterization of the insertion devices for the ATHOS soft X-ray beamline. For this purpose, a novel three-axis teslameter has been developed, which will be placed between the undulator and its outer shell in a very limited volumetric space of 150 x 50 x 45 mm. Together with a Hall probe at the center of the cross sectional area of the undulator, the setup will traverse along the undulator length on a specifically designed rig with minimal vibrations. This teslameter has all the analog signal conditioning circuitry for the Hall probe and also has on board 24-bit digitization. The instrument also handles an interface to a linear absolute encoder. The old instrumentation used only had analog signal conditioning circuitry whilst digitization was done off board. The new instrument also provides a very accurate magnetic field map in the µT range with simultaneous readings from the position encoder at an accuracy of ±3 µm. In this paper, a series of tests are described, which were performed at PSI in order to establish the measuring precision and repeatability of the instrument.

scholarly journals Design and Development of a Reduced Form-Factor High Accuracy Three-Axis Teslameter

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 368 ◽  
Author(s):  
Johann Cassar ◽  
Andrew Sammut ◽  
Nicholas Sammut ◽  
Marco Calvi ◽  
Sasa Dimitrijevic ◽  
...  
Keyword(s):  
Broadband Noise ◽  
Reduced Form ◽  
Hall Probe ◽  
Digital Conversion ◽  
X Ray ◽  
New Instrument ◽  
Absolute Encoder ◽  
Paul Scherrer ◽  
Analogue To Digital ◽  
Performance Results

A novel three-axis teslameter and other similar machines have been designed and developed for SwissFEL at the Paul Scherrer Institute (PSI). The developed instrument will be used for high fidelity characterisation and optimisation of the undulators for the ATHOS soft X-ray beamline. The teslameter incorporates analogue signal conditioning for the three-axes interface to a SENIS Hall probe, an interface to a Heidenhain linear absolute encoder and an on-board high-resolution 24-bit analogue-to-digital conversion. This is in contrast to the old instrumentation setup used, which only comprises the analogue circuitry with digitization being done externally to the instrument. The new instrument fits in a volumetric space of 150 mm × 50 mm × 45 mm, being very compact in size and also compatible with the in-vacuum undulators. This paper describes the design and the development of the different components of the teslameter. Performance results are presented that demonstrate offset fluctuation and drift (0.1–10 Hz) with a standard deviation of 0.78 µT and a broadband noise (10–500 Hz) of 2.05 µT with an acquisition frequency of 2 kHz.

scholarly journals Calibration and Characterization of a Reduced Form-Factor High Accuracy Three-Axis Teslameter

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 151
Author(s):  
Johann Cassar ◽  
Andrew Sammut ◽  
Nicholas Sammut ◽  
Marco Calvi ◽  
Zarko Mitrovic ◽  
...  
Keyword(s):  
Form Factor ◽  
Measurement Techniques ◽  
Calibration Procedure ◽  
Reduced Form ◽  
Hall Probe ◽  
X Ray ◽  
Temperature Offset ◽  
Paul Scherrer ◽  
Reference Fields

A new reduced form-factor three axes digital teslameter, based on the spinning current technique, has been developed. This instrument will be used to characterize the SwissFEL insertion devices at the Paul Scherrer Institute (PSI) for the ATHOS soft X-ray beamline. A detailed and standardized calibration procedure is critical to optimize the performance of this precision instrument. This paper presents the measurement techniques used for the corrective improvements implemented through non-linearity, temperature offset, temperature sensitivity compensation of the Hall probe and electronics temperature compensation. A detailed quantitative analysis of the reduction in errors on the application of each step of the calibration is presented. The percentage peak error reduction attained through calibration of the instrument for reference fields in the range of ±2 T is registered to drop from 1.94% down to 0.02%.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Characterization of Rh/Si multilayer structure by HREM and HAADF

1992 ◽  
Vol 50 (1) ◽  
pp. 122-123
Author(s):  
Y. Cheng ◽  
J. Liu ◽  
M.B. Stearns ◽  
D.G. Steams
Keyword(s):  
Normal Incidence ◽  
High Resolution Electron Microscopy ◽  
X Rays ◽  
Beam Direction ◽  
Cross Sectional ◽  
Optical Elements ◽  
Resolution Electron ◽  
Point To Point ◽  
Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Genomic, Metagenomic and Transcriptomic Characterization of the Clinical Forms of COVID-19: A Comparative Cross-Sectional Study

2020 ◽  
Author(s):  
Christophe Rodriguez ◽  
Nicolas de Prost ◽  
Slim Fourati ◽  
Claudie Lamoureux ◽  
Guillaume Gricourt ◽  
...  
Keyword(s):  
Cross Sectional Study ◽  
Sectional Study ◽  
Cross Sectional ◽  
Clinical Forms

Significados de Morte: o Discurso do Sujeito Coletivo da Enfermagem / Meaning of Death: the collective subject speech of the nursing staff

1970 ◽  
Vol 6 (1) ◽  
pp. 52-58
Author(s):  
Fellipe Afonso de Azevedo ◽  
Noé D’jalma Araújo ◽  
Néliton Célio de Novais ◽  
José Vítor da Silva ◽  
Renato Augusto Passos
Keyword(s):  
Nursing Staff ◽  
Hospital Setting ◽  
Field Research ◽  
Structured Interview ◽  
Minas Gerais ◽  
Structured Interviews ◽  
Cross Sectional ◽  
Emergency Units ◽  
Methodological Guidelines

RESUMOObjetivo: o presente trabalho teve como objetivo identificar os significados de morte emergentes das equipes de enfermagem que atuam nas unidades de Pronto Socorro e Unidade de Terapia Intensiva (UTI) em uma entidade de médio porte situada no Sul de Minas Gerais. Materiais e métodos: estudo de abordagem qualitativa, do tipo descritivo, de campo e transversal. A amostra estudada foi composta de oito enfermeiros, 22 técnicos e quatro auxiliares de enfermagem, totalizando 34 profissionais, sendo utilizado o instrumento de caracterização pessoal e profissional da equipe de enfermagem e o roteiro de entrevista semiestruturada. A amostragem foi proposital. A coleta de dados foi realizada através de entrevista semiestruturada, gravada e transcrita. As diretrizes metodológicas do Discurso do Sujeito Coletivo foram utilizadas para a seleção das ideias centrais e expressões-chave correspondentes, a partir das quais foram extraídos os discursos dos sujeitos, no cenário da instituição hospitalar. Resultados e Discussão: ao analisar o tema “significados de morte”, obtiveram-se as seguintes ideias centrais: “passagem”, “diversos significados”, “fim da vida” e “fim e começo de outra vida”. Conclusão: As concepções acerca do tema morte para os profissionais participantes deste trabalho reforça a necessidade de estudos sobre o tema durante a formação acadêmica. Certos de que irão vivenciar este tipo de situação no dia-a-dia profissional, é preciso prepará-los psicologicamente para isso.Palavras-chave: Morte, Equipe de enfermagem, Assistência ao paciente.ABSTRACTObjective: This study aimed to identify the meanings of emerging death of the nursing staff working in the Emergency Units and Intensive Care Unit (ICU) in a medium-sized entity located in southern Minas Gerais. Materials and methods: A cross-sectional qualitative field research. The sample was composed of 8 nurses, 22 technicians and 4 nursing assistants, totaling 34 professionals. It was used a tool of personal and professional characterization of the nursing team and a semi-structured interview. Sampling was intentional. Data collection was conducted through semi-structured interviews, that were recorded and transcribed. The methodological guidelines of the Collective Subject Speech were used for the selection of the central ideas and corresponding key expressions, from which the speeches of the subjects were taken, in the hospital setting. Results and discussion: to examine the topic "death meanings" yielded the following core ideas: "pass", "different meanings", "end of life" and "end and beginning of another life." Conclusion: The conceptions about the death theme for the professional participants of this study reinforces the need for studies on the subject during their academic training. It is certain that they will experience this type of situation on their daily professional routine, therefore there is a need to prepare them psychologically for this.Keywords: Death, Nursing staff, Patient care.

scholarly journals Very Fast and Accurate Procedure for the Characterization of Photovoltaic Panels from Datasheet Information

2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Antonino Laudani ◽  
Francesco Riganti Fulginei ◽  
Alessandro Salvini ◽  
Gabriele Maria Lozito ◽  
Salvatore Coco
Keyword(s):  
Numerical Methods ◽  
Search Space ◽  
Extraction Process ◽  
Reduced Form ◽  
Photovoltaic Panels ◽  
Approximation Techniques ◽  
Computational Costs ◽  
Minimization Technique ◽  
Accurate Procedure

In recent years several numerical methods have been proposed to identify the five-parameter model of photovoltaic panels from manufacturer datasheets also by introducing simplification or approximation techniques. In this paper we present a fast and accurate procedure for obtaining the parameters of the five-parameter model by starting from its reduced form. The procedure allows characterizing, in few seconds, thousands of photovoltaic panels present on the standard databases. It introduces and takes advantage of further important mathematical considerations without any model simplifications or data approximations. In particular the five parameters are divided in two groups, independent and dependent parameters, in order to reduce the dimensions of the search space. The partitioning of the parameters provides a strong advantage in terms of convergence, computational costs, and execution time of the present approach. Validations on thousands of photovoltaic panels are presented that show how it is possible to make easy and efficient the extraction process of the five parameters, without taking care of choosing a specific solver algorithm but simply by using any deterministic optimization/minimization technique.

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