scholarly journals Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1164 ◽  
Author(s):  
zhao ◽  
Zhu ◽  
Guo ◽  
Cong ◽  
Tee ◽  
...  
Keyword(s):  
Transmission Line ◽  
Resonant Tunneling ◽  
Impedance Matching ◽  
Graphene Film ◽  
Differential Resistance ◽  
Resonant Tunneling Diode ◽  
Output Analysis ◽  
Antenna Structure ◽  
Tunneling Diode ◽  
Oscillator Output

This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with a RTD-gated-graphene-2DEF (two dimensional electron fluid) and demonstrates the functioning of this RTD oscillator through a transmission line simulation model. Impedance of the RTD oscillator changes periodically when physical dimension of the device is of considerable fraction of the electrical wavelength. As long as impedance matching is achieved, the oscillation frequency is not limited by the size of the device. An RTD oscillator with a graphene film and negative differential resistance (NDR) will produce power amplification. The positive electrode of the DC power supply is modified and designed as an antenna. So, the reflected power can also be radiated to increase RTD oscillator output power. The output analysis shows that through the optimization of the antenna structure, it is possible to increase the RTD oscillator output to 22 mW at 1.9 THz and 20 mW at 6.1 THz respectively. Furthermore, the RTD oscillator has the potential to oscillate at 50 THz with a matching antenna.

scholarly journals Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

2020 ◽  
Vol 11 ◽  
pp. 688-694 ◽  
Author(s):  
Majid Sanaeepur
Keyword(s):  
Boron Nitride ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Substitutional Defects ◽  
Boron Nitride Nanoribbons ◽  
Armchair Graphene

A nanometer-scaled resonant tunneling diode based on lateral heterojunctions of armchair graphene and boron nitride nanoribbons, exhibiting negative differential resistance is proposed. Low-bandgap armchair graphene nanoribbons and high-bandgap armchair boron nitride nanoribbons are used to design the well and the barrier region, respectively. The effect of all possible substitutional defects (including BC, NC, CB, and CN) at the interface of graphene and boron nitride nanoribbons on the negative differential resistance behavior of the proposed resonant tunneling diode is investigated. Transport simulations are carried out in the framework of tight-binding Hamiltonians and non-equilibrium Green’s functions. The results show that a single substitutional defect at the interface of armchair graphene and boron nitride nanoribbons can dramatically affect the negative differential resistance behavior depending on its type and location in the structure.

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