Tunable negative differential resistance in planar graphene superlattice resonant tunneling diode

2017 ◽  
Vol 121 (14) ◽  
pp. 144506 ◽  
Author(s):  
S. M. Sattari-Esfahlan ◽  
J. Fouladi-Oskuei ◽  
S. Shojaei
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Differential Resistance ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Graphene Superlattice ◽  
Planar Graphene

scholarly journals Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

2020 ◽  
Vol 11 ◽  
pp. 688-694 ◽  
Author(s):  
Majid Sanaeepur
Keyword(s):  
Boron Nitride ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Substitutional Defects ◽  
Boron Nitride Nanoribbons ◽  
Armchair Graphene

A nanometer-scaled resonant tunneling diode based on lateral heterojunctions of armchair graphene and boron nitride nanoribbons, exhibiting negative differential resistance is proposed. Low-bandgap armchair graphene nanoribbons and high-bandgap armchair boron nitride nanoribbons are used to design the well and the barrier region, respectively. The effect of all possible substitutional defects (including BC, NC, CB, and CN) at the interface of graphene and boron nitride nanoribbons on the negative differential resistance behavior of the proposed resonant tunneling diode is investigated. Transport simulations are carried out in the framework of tight-binding Hamiltonians and non-equilibrium Green’s functions. The results show that a single substitutional defect at the interface of armchair graphene and boron nitride nanoribbons can dramatically affect the negative differential resistance behavior depending on its type and location in the structure.

scholarly journals Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 143-146 ◽  
Author(s):  
Carl L. Gardner ◽  
Christian Ringhofer
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Model Simulation ◽  
Differential Resistance ◽  
Resonant Tunneling Diode ◽  
Model Simulations ◽  
Quantum Hydrodynamic Model ◽  
Tunneling Diode ◽  
Qhd Model ◽  
Quantum Hydrodynamic

Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(ℏ2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.

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