scholarly journals A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 377 ◽  
Author(s):  
Fanming Zeng ◽  
Judy An ◽  
Guangnan Zhou ◽  
Wenmao Li ◽  
Hui Wang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Recent Progress ◽  
High Electron Mobility Transistors ◽  
Device Fabrication ◽  
High Electron ◽  
Simulation Studies ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Structures ◽  
High Frequency Devices

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility Transistors

1989 ◽  
Vol 160 ◽  
Author(s):  
J.M. Ballingall ◽  
Pin Ho ◽  
G J. Tessmer ◽  
P.A. Martin ◽  
T.H. Yu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Device Fabrication ◽  
High Electron ◽  
Single Quantum Well ◽  
High Electron Mobility ◽  
Molecular Beam Epitaxial ◽  
Electron Mobility Transistors ◽  
Current State ◽  
Molecular Beam Epitaxial Growth

AbstractHigh electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic IπGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub%0.2 µm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices.

Degradation of InGaAs High Electron Mobility Transistors: The Role of Channel Composition and Thickness

1995 ◽  
Vol 378 ◽  
Author(s):  
Marjohn Meshkinpour ◽  
Mark S. Goorsky ◽  
Dwight C. Streit ◽  
Thomas R. Block ◽  
Mike Wojtowicz
Keyword(s):  
Electron Mobility ◽  
Poor Performance ◽  
High Electron Mobility Transistors ◽  
Device Performance ◽  
Misfit Dislocations ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Structures ◽  
Channel Thickness

AbstractIn this study, we examined the performance of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors with varying channel layer thicknesses for indium mole fractions of 0.21 and 0.24. For both compositions, we find that there is an optimum channel thickness above which the device performance is impaired. As expected the effective critical thickness of the In0.2iGa0.79As layer is higher. Surprisingly, however, transmission electron microscopy of the device structures indicates that the device performance is not impaired by the presence of a linear array of misfit dislocations. In fact, the devices with highest performance have misfit dislocations indicating that defect engineering may lead to improved performance in these structures. Furthermore, we find that device structures with poor performance have misfit dislocations along both of the <110> directions. Triple axis x-ray diffraction provides a non-destructive estimate of the dislocation densities present.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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