Degradation of InGaAs High Electron Mobility Transistors: The Role of Channel Composition and Thickness

1995 ◽  
Vol 378 ◽  
Author(s):  
Marjohn Meshkinpour ◽  
Mark S. Goorsky ◽  
Dwight C. Streit ◽  
Thomas R. Block ◽  
Mike Wojtowicz
Keyword(s):  
Electron Mobility ◽  
Poor Performance ◽  
High Electron Mobility Transistors ◽  
Device Performance ◽  
Misfit Dislocations ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Structures ◽  
Channel Thickness

AbstractIn this study, we examined the performance of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors with varying channel layer thicknesses for indium mole fractions of 0.21 and 0.24. For both compositions, we find that there is an optimum channel thickness above which the device performance is impaired. As expected the effective critical thickness of the In0.2iGa0.79As layer is higher. Surprisingly, however, transmission electron microscopy of the device structures indicates that the device performance is not impaired by the presence of a linear array of misfit dislocations. In fact, the devices with highest performance have misfit dislocations indicating that defect engineering may lead to improved performance in these structures. Furthermore, we find that device structures with poor performance have misfit dislocations along both of the <110> directions. Triple axis x-ray diffraction provides a non-destructive estimate of the dislocation densities present.

The Relationship between InGaAs Channel Layer Thickness and Device Performance in High Electron Mobility Transistors

1994 ◽  
Vol 340 ◽  
Author(s):  
M. Meshkinpour ◽  
M. S. Goorsky ◽  
D. C. Streit ◽  
T. Block ◽  
M. Wojtowicz ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Effective Means ◽  
High Electron Mobility Transistors ◽  
Misfit Dislocations ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray ◽  
Electron Mobility Transistors ◽  
Channel Thickness ◽  
Device Properties

ABSTRACTThe performance of InGaAs/GaAs pseudomorphic high electron mobility transistors is anticipated to improve with increased channel thickness due to reduced effects of quantum confinement. However, greater channel thicknesses increase the probability of forming misfit dislocations which have been reported to impair device properties. We characterized the composition and thickness of the active layer in Al0.25Ga0.75As / In0.21Ga0.79As structures with different channel thicknesses (75 Å - 300 Å) to within ± 0.005 and ± 8 Å using high resolution x-ray techniques. We determined, using Hall and rf measurements, that the device properties of these structures improved with increasing thickness up to about 185-205 Å; degraded properties were observed for thicker channel layers. Cathodoluminescence results indicate that the mosaic spread observed in x-ray triple axis rocking curves of these device structures is due to the presence of misfit dislocations. Thus, even though misfit dislocations are present, the device structure performs best with a channel thickness of ∼185 Å. These results demonstrate that one can fabricate functional devices in excess of critical thickness considerations, and that these x-ray techniques provide an effective means to evaluate structural properties prior to device processing.

scholarly journals Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 318 ◽  
Author(s):  
He Guan ◽  
Shaoxi Wang ◽  
Lingli Chen ◽  
Bo Gao ◽  
Ying Wang ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Electron Velocity ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Thickness ◽  
The Impact ◽  
Different Thickness

Because of the high electron mobility and electron velocity in the channel, InAs/AlSb high electron mobility transistors (HEMTs) have excellent physical properties, compared with the other traditional III-V semiconductor components, such as ultra-high cut-off frequency, very low power consumption and good noise performance. In this paper, both the structure and working principle of InAs/AlSb HEMTs were studied, the energy band distribution of the InAs/AlSb heterojunction epitaxy was analyzed, and the generation mechanism and scattering mechanism of two-dimensional electron gas (2DEG) in InAs channel were demonstrated, based on the software simulation in detail. In order to discuss the impact of different epitaxial structures on the 2DEG and electron mobility in channel, four kinds of epitaxies with different thickness of InAs channel and AlSb upper-barrier were manufactured. The samples were evaluated with the contact Hall test. It is found the sample with a channel thickness of 15 nm and upper-barrier layer of 17 nm shows a best compromised sheet carrier concentration of 2.56 × 1012 cm−2 and electron mobility of 1.81 × 104 cm2/V·s, and a low sheet resistivity of 135 Ω/□, which we considered to be the optimized thickness of channel layer and upper-barrier layer. This study is a reference to further design InAs/AlSb HEMT, by ensuring a good device performance.

Role of misfit dislocations on pseudomorphic high electron mobility transistors

1995 ◽  
Vol 66 (6) ◽  
pp. 748-750 ◽  
Author(s):  
M. Meshkinpour ◽  
M. S. Goorsky ◽  
G. Chu ◽  
D. C. Streit ◽  
T. R. Block ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Misfit Dislocations ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 377 ◽  
Author(s):  
Fanming Zeng ◽  
Judy An ◽  
Guangnan Zhou ◽  
Wenmao Li ◽  
Hui Wang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Recent Progress ◽  
High Electron Mobility Transistors ◽  
Device Fabrication ◽  
High Electron ◽  
Simulation Studies ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Structures ◽  
High Frequency Devices

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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