scholarly journals Analytical and simulation studies of failure modes in SRAMs using high electron mobility transistors

1993 ◽  
Vol 12 (12) ◽  
pp. 1885-1896 ◽  
Author(s):  
S. Mohan ◽  
P. Mazumder
Keyword(s):  
Electron Mobility ◽  
Failure Modes ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Simulation Studies ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Reliability issues of Gallium Nitride High Electron Mobility Transistors

2010 ◽  
Vol 2 (1) ◽  
pp. 39-50 ◽  
Author(s):  
Gaudenzio Meneghesso ◽  
Matteo Meneghini ◽  
Augusto Tazzoli ◽  
Nicolo' Ronchi ◽  
Antonio Stocco ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Failure Modes ◽  
Deep Level ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Stress Tests ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.

scholarly journals A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 377 ◽  
Author(s):  
Fanming Zeng ◽  
Judy An ◽  
Guangnan Zhou ◽  
Wenmao Li ◽  
Hui Wang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Recent Progress ◽  
High Electron Mobility Transistors ◽  
Device Fabrication ◽  
High Electron ◽  
Simulation Studies ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Structures ◽  
High Frequency Devices

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

scholarly journals Investigation of Mean-Time-to-Failure Measurements from AlGaN/GaN High-Electron-Mobility Transistors Using Eyring Model

Electronics ◽  
2021 ◽  
Vol 10 (24) ◽  
pp. 3052
Author(s):  
Surajit Chakraborty ◽  
Tae-Woo Kim
Keyword(s):  
Electron Mobility ◽  
Failure Modes ◽  
High Electron Mobility Transistors ◽  
Time To Failure ◽  
High Electron ◽  
Mean Time To Failure ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Eyring Model ◽  
Mean Time

We present the mean-time-to-failure (MTTF) calculations for AlGaN/GaN high-electron-mobility transistors (HEMTs) using two independent acceleration factors. MTTF predictions are generally calculated through the Arrhenius relationship, based on channel temperature and acceleration, depend only on one parameter. Although the failure modes of the AlGaN/GaN HEMTs depend largely on the applied electric fields, the Eyring model is introduced to investigate both voltage and temperature dependent degradation of AlGaN/GaN devices. In anticipation of adequate MTTF values, studies were conducted on non-commercial devices. Further, we distinguished the cumulative failure percentages through the Weibull and log-normal distributions. We also explored the increase in gate leakage current at high temperatures for early device deterioration.

Thermally Activated Failure Modes and Mechanisms of High Electron Mobility Transistors

ESSDERC ’89 ◽  
1989 ◽  
pp. 813-816
Author(s):  
Claudio Canali ◽  
Giuseppe Castellaneta ◽  
Fabrizio Magistrali ◽  
Marco Sangalli ◽  
Carlo Tedesco ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Failure Modes ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Thermally Activated ◽  
Electron Mobility Transistors

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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