scholarly journals Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 671
Author(s):  
Rui Huang ◽  
Tian Lan ◽  
Chong Li ◽  
Jing Li ◽  
Zhiyong Wang
Keyword(s):  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Annealing Temperature ◽  
High Energy ◽  
Transfer Layer ◽  
Implantation Energy ◽  
Force Microscopy ◽  
Projected Range ◽  
Annealing Conditions ◽  
Atomic Force

In this paper, effects of He+ and H+ co-implantation with high implantation energy on surface blisters and craters at different annealing conditions are systematically investigated. Surface morphology as well as defect microstructure are observed and analyzed by various approaches, such as scanning electron microscopy (SEM), optical microscopy (OM), atomic force microscopy (AFM), and Raman spectroscopy. It is found that after 500 °C annealing and above for 1 h, surface blisters and exfoliation are observed for Si and SiO2-on-Si wafers except for the samples implanted with only He+ ions. AFM images reveal that the heights of blisters in Si and SiO2-on-Si wafers are 432 nm and 397 nm respectively and the thickness of transfer layer is at the depth of about 1.4 μm, which is consistent with the projected range of He+ and H+ ions. Raman spectroscopy demonstrates that higher annealing temperature can lead to a stronger intensity of the VH2 peak. Under the same implantation parameters, surface morphology of Si and SiO2-on-Si wafers is different after annealing process. This phenomenon is discussed in detail.

scholarly journals A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
C. Sedrati ◽  
A. Bouabellou ◽  
A. Kabir ◽  
R. Haddad ◽  
M. Boudissa ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sheet Resistance Measurement ◽  
Cobalt Silicides

AbstractIn this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

Germanium Layer Exfoliation by Ion-Cut Processes

2007 ◽  
Vol 994 ◽  
Author(s):  
Reinhart Job ◽  
Wolfgang Düngen
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
Tensile Stress ◽  
Structure Formation ◽  
Annealing Temperature ◽  
Hydrogen Annealing ◽  
Force Microscopy ◽  
Air Atmosphere ◽  
Atomic Force ◽  
Germanium Layer

Abstract(100)–oriented Czochralski germanium (Cz Ge) wafers were implanted with hydrogen at en-ergies up to 100 keV (related to H+) at a doses of D = 4·106 H+/cm2. Post-hydrogen annealing in normal air atmosphere on a hotplate was employed for 10 min at various temperatures between 350 °C and 600 °C to investigate the samples with regard to blistering and layer exfoliation having in mind the Smart-Cut™ technology for GOI structure formation. The generation and evolution of blisters and craters (“exploded” blisters demonstrating layer exfoliation) were investigated in dependence on the annealing temperature by atomic force microscopy and μ-Raman spectroscopy. The latter method points out the appearance of strong tensile stress upon H+ implantation and subsequent annealing. If the tensile stress exceeds about 1.2 GPa layer exfoliation occurs.

Effect of Annealing Temperature on Surface Morphology of Lanthanum Phosphate (LaPO4) Nanostructures Thin Films

2012 ◽  
Vol 626 ◽  
pp. 302-305 ◽  
Author(s):  
A.Z. Zainurul ◽  
M. Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Coating Process ◽  
Force Microscopy ◽  
Lanthanum Phosphate ◽  
Atomic Force ◽  
Eds Analysis

LaPO4 particles with different morphologies and sizes have been successfully synthesized via sol-gel spinned coating process. The aim of this paper is to investigate the effect of annealing on the morphology and formation of LaPO4 on thin films. Physical structural properties of LaPO4 was investigated using atomic force microscopy (AFM-XE100). EDS analysis was done to check on the formation of LaPO4.

Effect of Annealing Temperature on TiO2 Nanostructured Prepared by Sol-Gel Method

2013 ◽  
Vol 832 ◽  
pp. 763-766 ◽  
Author(s):  
S.K.M. Maarof ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Raman Spectroscopy ◽  
Titanium Dioxide ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ethanol Acetic Acid ◽  
Triton X

Titanium Dioxide, TiO2 is one of the potential semiconductor materials. TiO2 has much application such as for pigments, oxygen sensors, and photocatalyst. Recently, the researcher study on the other application and revealed that this material has a great potential to be use in nanocoating area. The objective of this paper is to produce TiO2 nanostructured prepared by sol-gel method. Sol-gel was carried out using tetra (IV) isopropoxide (TTIP), absolute ethanol, Acetic Acid Glacial (GAA), Triton-X-100 and deionized water and all the solution was mixing by continuous stirring and heating. After finished prepare the sol-gel, solution will be spin coated onto glass substrate and annealed with different temperature for 2 hours. The particles were analyzed using Raman Spectroscopy to observe the crystallographic phase, and the morphology was evaluated through Atomic Force Microscopy (AFM). As a result, TiO2 that annealed at 450°C shows the better nanostructured compared to other annealing temperature. Keywords: Titanium Dioxide (TiO2); Sol-gel method ; Spin-coating ; Annealing process ; Raman spectroscopy

High Temperature Graphene Formation on Capped and Uncapped SiC

2011 ◽  
Vol 679-680 ◽  
pp. 785-788 ◽  
Author(s):  
Robert Göckeritz ◽  
Denny Schmidt ◽  
Moritz Beleites ◽  
Gerhard Seifert ◽  
Stefan P. Krischok ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
High Temperature ◽  
Surface Morphology ◽  
Epitaxial Graphene ◽  
Argon Pressure ◽  
Slow Heating ◽  
Heating Rates ◽  
Force Microscopy ◽  
Atomic Force

Epitaxial graphene was grown on Si-face 4H-SiC. A SiC pretreatment with a carbon cap¬ping technique was used as well as slow heating rates and a temperature of 1800 °C under atmos¬pheric argon pressure. The surface morphology was investigated by atomic force microscopy and Raman spectroscopy was performed for samples with different graphitization times.

Nanocrystalline ZnO Films Grown by PLD for NO2 and NH3 Sensor

2013 ◽  
Vol 475-476 ◽  
pp. 446-450 ◽  
Author(s):  
Oleg Alekseevich Ageev ◽  
Evgeny Yurievich Gusev ◽  
Evgeny Gennad’evich Zamburg ◽  
Daniil Evgen’evich Vakulov ◽  
Zakhar Evgen’evich Vakulov ◽  
...  
Keyword(s):  
Grain Size ◽  
Substrate Temperature ◽  
Annealing Temperature ◽  
Gas Sensing ◽  
Annealing Treatment ◽  
High Energy ◽  
Zno Films ◽  
Deposition Technique ◽  
Force Microscopy ◽  
Atomic Force

Nanocrystalline ZnO thin films were grown by pulsed laser deposition technique on polycor substrates. The operation laser fluence of 2.0 J·cm-2 and film thickness of 60 nm were fixed while varying target-to-substrate distance (20-135 mm), substrate temperature (100-500 °C) and annealing temperature (300-700 °C). Structural and morphological investigations carried out by reflection high-energy electron diffraction, scanning electron and atomic force microcopies, have shown a strong influence of deposition technique parameters on grain size of the zinc oxide films. Atomic force microscopy showed the surface roughness decreasing and grain size increasing with the annealing treatment of the as-deposited films. The resistivity and Hall mobility of ZnO films were increased with substrate temperature and/or annealing temperature rise. The gas sensing characteristics of the films were investigated towards nitrogen dioxide and ammonia at a selected operating temperature (22 and 50 °C).

Etching Treatment Effect on Surface Morphology of Dental Structures

2017 ◽  
Vol 68 (11) ◽  
pp. 2700-2703 ◽  
Author(s):  
Kamel Earar ◽  
Vasile Iulian Antoniac ◽  
Sorana Baciu ◽  
Simion Bran ◽  
Florin Onisor ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Phosphoric Acid ◽  
Human Teeth ◽  
Strong Bond ◽  
Force Microscopy ◽  
Atomic Force ◽  
Human Dentine ◽  
Dental Surface ◽  
Scanning Electron

This study examined and compared surface of human dentine after acidic etching with hydrogen peroxide, phosphoric acid liquid and gel. Surface demineralization of dentin is necessary for a strong bond of adhesive at dental surface. Split human teeth were used. After application of mentioned substances at dentin level measures of the contact angle and surface morphology were employed. Surface morphology was analyzed with the help of scanning electron microscopy and atomic force microscopy. Liquid phosphoric acid yielded highest demineralization showing better hydrophobicity than the rest, thus having more contact surface. Surface roughness are less evident and formed surface micropores of 4 �m remained open after wash and air dry providing better adhesive canalicular penetration and subsequent bond.

scholarly journals Exploring Intramolecular Methyl–Methyl Coupling on a Metal Surface for Edge-Extended Graphene Nanoribbons

2021 ◽  
Vol 03 (02) ◽  
pp. 128-133
Author(s):  
Zijie Qiu ◽  
Qiang Sun ◽  
Shiyong Wang ◽  
Gabriela Borin Barin ◽  
Bastian Dumslaff ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
High Resolution ◽  
Graphene Nanoribbons ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Methyl Methyl ◽  
Atomic Force ◽  
Edge Extension

Intramolecular methyl–methyl coupling on Au (111) is explored as a new on-surface protocol for edge extension in graphene nanoribbons (GNRs). Characterized by high-resolution scanning tunneling microscopy, noncontact atomic force microscopy, and Raman spectroscopy, the methyl–methyl coupling is proven to indeed proceed at the armchair edges of the GNRs, forming six-membered rings with sp3- or sp2-hybridized carbons.

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