scholarly journals MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

Crystals ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 311 ◽  
Author(s):  
Nikolay Baidus ◽  
Vladimir Aleshkin ◽  
Alexander Dubinov ◽  
Konstantin Kudryavtsev ◽  
Sergei Nekorkin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Pumping ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Growth Technique ◽  
Si Substrates ◽  
Quantum Well Laser ◽  
Mocvd Growth ◽  
Current Densities ◽  
On Chip

The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type designed for the operation under the electrical pumping. Influence of the Si substrate offcut from the [001] direction, thickness of a Ge buffer and insertion of the AlAs/GaAs superlattice between Ge and GaAs on the structural and optical properties of fabricated samples was studied. The measured threshold current densities at room temperatures were 5.5 kA/cm2 and 20 kA/cm2 for lasers operating at 0.99 μm and 1.11 μm respectively. In order to obtain the stimulated emission at wavelengths longer than 1.1 μm, the InGaAs quantum well laser structures with high In content and GaAsP strain-compensating layers were grown both on Ge/Si and GaAs substrates. Structures grown on GaAs exhibited stimulated emission under optical pumping at the wavelengths of up to 1.24 μm at 300 K while those grown on Ge/Si substrates emitted at shorter wavelengths of up to 1.1 μm and only at 77 K. The main reasons for such performance worsening and also some approaches to overcome them are discussed. The obtained results have shown that monolithic integration of direct-gap A3B5 compounds on Si using MOCVD technology is rather promising approach for obtaining the Si-compatible on-chip effective light source.

High-Temperature W Diode Lasers Emitting at 3.3µm

1999 ◽  
Vol 607 ◽  
Author(s):  
L. J. Olafsen ◽  
W. W. Bewley ◽  
I. Vurgaftman ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optical Pumping ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Type Ii ◽  
Operating Characteristics ◽  
Current Densities ◽  
Cladding Layers

AbstractW lasers based on type-II antimonides were recently operated nearly to room temperature under the conditions of cw optical pumping. However, the development of electrically pumped mid-infrared lasers has not yet reached the same level of performance. This is largely related to the more challenging task of simultaneously optimizing the doping/transport and gain/optical properties of the devices. Here we report a demonstration of type-II mid-IR diode lasers employing W active quantum wells. Laser structures with 5 or 10 active periods sandwiched between broadened-waveguide separate confinement regions and quaternary optical cladding layers were processed into 100-µm-wide stripes, cleaved into 1-mm-long cavities, and mounted junction side down. For 0.5-1 µs pulses at a repetition rate of 200 Hz, lasing was obtained up to a maximum operating temperature of 310 K, where the emission wavelength was 3.27 µm. The threshold current densities were 110 A/cm2and 25 kA/cm2 at 78 and 310 K, respectively. The characteristic temperature, To, was 48 K for temperatures between 100 and 280 K. Operation in cw mode was obtained to 195 K, with threshold current densities of 63 A/cm2and 1.4 kA/cm2at 78 and 195 K, respectively, with To = 38 K between 78 and 195 K. Significant further improvements in the operating characteristics are expected once the optimization of the designs and fabrication procedures is complete.

Theoretical Performance of MID-IR Broken-Gap Superlattice Quantum Well Lasers

1996 ◽  
Vol 450 ◽  
Author(s):  
Michael E. Flatté ◽  
C. H. Grein ◽  
J. T. Olesberg ◽  
T. F. Boggess
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Type Ii Superlattice ◽  
Superlattice Structure ◽  
Current Densities ◽  
Semi Empirical ◽  
Broken Gap ◽  
The Ideal

ABSTRACTWe will present calculations of the ideal performance of mid-infrared InAs/InGaSb superlattice quantum well lasers. For these systems several periods of an InAs/InGaSb type-II superlattice are grown in quantum wells. Calculations of the non-radiative and radiative lifetimes of the carriers utilize the full non-parabolic band structure and momentum-dependent matrix elements calculated from a semi-empirical multilayer K · P theory. From these lifetimes, threshold current densities have been evaluated for laser structures. We find serious problems with the hole and electron confinement in the superlattice quantum wells grown to date, and propose a four-layer superlattice structure which corrects these problems.

Strategies For Direct Monolithic Integration of AlxGa(1−x)As/InxGa(1−x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1−x) Buffer Layers

2001 ◽  
Vol 692 ◽  
Author(s):  
Michael E. Groenert ◽  
Christopher W. Leitz ◽  
Arthur J. Pitera ◽  
Vicky K. Yang ◽  
Harry Lee ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Threshold Current ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Carrier Lifetimes ◽  
Si Substrates ◽  
Dislocation Densities ◽  
Minority Carrier Lifetimes ◽  
Current Densities ◽  
High Series

AbstractAlxGa(1−x)As/GaAs quantum well lasers have been demonstrated via organometallic chemical vapor deposition (OMCVD) on relaxed graded GexSi(1−x) virtual substrates on Si. Despite unoptimized laser structures with high series resistance and large threshold current densities, surface threading dislocation densities as low as 2×106 cm−2 enabled cw room-temperature lasing at a wavelength of 858nm. The laser structures are oxide-stripe gain-guided devices with differential quantum efficiencies of 0.16 and threshold current densities of 1550A/cm2. Identical devices grown on commercial GaAs substrates showed differential quantum efficiencies of 0.14 and threshold current densities of 1700A/cm2. This comparative data agrees with our previous measurements of near-bulk minority carrier lifetimes in GaAs grown on Ge/GeSi/Si substrates. A number of GaAs/Ge/Si integration issues including thermal expansion mismatch and Ge autodoping behavior in GaAs were overcome.

Spontaneous and Stimulated Intersubband Emission Under Optical Pumping

1996 ◽  
Vol 450 ◽  
Author(s):  
P. Boucaud ◽  
S. Sauvage ◽  
O. Gauthier-Lafaye ◽  
Z. Moussa ◽  
F.-H. Julien ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Free Electron Laser ◽  
Population Inversion ◽  
Laser Emission ◽  
Optical Pumping ◽  
Stimulated Emission ◽  
Mid Infrared ◽  
Asymmetric Quantum ◽  
Waveguide Length ◽  
Subband Energy

ABSTRACTWe have investigated the mid-infrared spontaneous and stimulated emission between confined subbands in the conduction band of GaAs/AlGaAs quantum wells. The carriers which give rise to the intersubband emission are excited in the upper subbands using an intersubband optical pumping in coupled asymmetric quantum wells. The quantum wells are designed using phonon engineering in order to obtain population inversion between the second and first excited subband. This is obtained by adjusting the subband energy spacing between E2 and E1 close to the optical phonon energy which in turn allows an efficient relaxation. We have first observed intersubband spontaneous emission between E3 and E2 at 14 μm using an intersubband pumping with a CO2 laser in resonance with the E1-E3 transition. In a second set of experiments, the quantum wells are embedded in an infrared waveguide. We have measured the stimulated intersubband gain using a picosecond two-color free electron laser. The first color bleaches the E1-E3 transition and provides the population inversion. The intersubband stimulated gain is measured versus the waveguide length and photon energy. Stimulated gains ≈ 80 cm−1 are reported thus demonstrating that laser emission under optical pumping appears feasible in optimized structures. Finally, we show that intersubband emission can also be observed in quantum wells using an interband optical pumping.

scholarly journals Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range

2018 ◽  
Vol 52 (4) ◽  
pp. 464
Author(s):  
V.V. Rumyantsev ◽  
L.S. Bovkun ◽  
A.M. Kadykov ◽  
M.A. Fadeev ◽  
A.A. Dubinov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Pumping ◽  
High Energy ◽  
Stimulated Emission ◽  
Infrared Range ◽  
Recombination Mechanism ◽  
Carrier Heating ◽  
Long Wavelength ◽  
Carrier Recombination ◽  
Long Wavelength Infrared

AbstractWe investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.

Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
D. A. S. Loeber ◽  
N. G. Anderson ◽  
J. M. Redwing ◽  
J. S. Flynn ◽  
G. M. Smith ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Multiple Quantum Well ◽  
Emission Spectra ◽  
Stimulated Emission ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

ABSTRACTStimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

Integration of a Quantum Well Laser with AlGaAs/GaAs-HEMT Electronics

1993 ◽  
Vol 300 ◽  
Author(s):  
W. Bronner ◽  
J. Hornung ◽  
K. Köhler ◽  
E. Olander ◽  
Z.-G. Wang
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Laser Action ◽  
Threshold Current ◽  
Contact Printing ◽  
Quantum Well Laser ◽  
First Results ◽  
Dry Etch ◽  
Cladding Layers

ABSTRACTIn this presentation the various technology steps for the monolithic integration of GaAs quantum well lasers with Double Pulse Doped AlGaAs/GaAs/AlGaAs Quantum Well (DPDQW) E/D HEMT electronics on a single substrate in one process run are described. All layers are grown by molecular beam epitaxy. The laser structure, consisting of three 74 Å GaAs quantum wells between two AlGaAs cladding layers, are grown on top of the electronic structure. The laser mesas and contact areas are defined by a combined wet and dry etch process. Apart from the transistor gates which are exposed by electron beam lithography, all lithography steps are performed using contact printing. A two layer metallization is used to interconnect the devices whereby air-bridges are used to connect the laser mesas to the electronics. First results showed laser action of laser diodes of area 3 x 300 μm2 at a threshold current of less than 60 mA, as well as the operation of different electronic devices on wafers which have been processed in this way. These include a laser diode driver, and an optoelectronic receiver with a MSM photo diode, both devices operating at a data rate of 5 Gbit/sec. These results indicate that the process sequence described is suitable for the integration of laser diodes and HEMT electronics.

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

2005 ◽  
Vol 475-479 ◽  
pp. 1663-1668 ◽  
Author(s):  
Rui-ying Zhang ◽  
Wei Wang ◽  
Fan Zhou ◽  
Jing Bian ◽  
Ling-juan Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multiple Quantum ◽  
Modulation Doping ◽  
Doping Effects ◽  
Low Threshold ◽  
Current Densities ◽  
First Time

1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.

Stimulated Emission in CdHgTe Structures with Quantum Wells under Optical Pumping

2016 ◽  
Vol 685 ◽  
pp. 627-631
Author(s):  
D.I. Gorn ◽  
Alexander V. Voitsekhovskii
Keyword(s):  
Quantum Wells ◽  
Optical Pumping ◽  
Infrared Emission ◽  
Stimulated Emission ◽  
Experimental Results

This paper is devoted to the consideration of currently available studies on obtaining stimulated infrared emission in structures based on HgCdTe quantum wells. Also analysis and interpretation of discussed experimental results are presented in this article.

scholarly journals Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer

2019 ◽  
Vol 9 (1) ◽  
pp. 162
Author(s):  
Ning An ◽  
Lei Ma ◽  
Guanyu Wen ◽  
Zhipeng Liang ◽  
Haitao Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Structure Design ◽  
Blocking Layer ◽  
Quantum Well Laser ◽  
Low Threshold ◽  
Current Densities ◽  
Better Than

A low threshold current density of 2 μm InGaAsSb/AlGaAsSb muti-quantum well (MQW) laser diode with carrier blocking layer (CBL) is demonstrated by simulation and fabrication. The carrier leakage is found to be theoretically suppressed for the devices with CBL. All the laser wafers are grown with a solid source Molecular Beam Epitaxy(MBE) System. Experimental results reveal the samples with CBL exhibits ultra-low threshold current densities of 142 A/cm2 and high slope efficiency of 0.158 W/A, which is better than 215 A/cm2 and 0.122 W/A achieved in the conventional InGaAsSb/AlGaAsSb LDs at room temperature. This improvement in device performance comes from meticulously designing the carrier blocking layers to increase carrier confinement and injection efficiency.

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