scholarly journals Two-Dimensional Crystalline Gridding Networks of Hybrid Halide Perovskite for Random Lasing

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1114
Author(s):  
Jingyun Hu ◽  
Haibin Xue ◽  
Xinping Zhang
Keyword(s):  
Thin Film ◽  
Large Scale ◽  
Solution Concentration ◽  
Two Dimensional ◽  
Random Lasing ◽  
Large Area ◽  
High Quality ◽  
Strong Light ◽  
Patterned Substrate ◽  
Convenient Technique

We report fabrication of large-scale homogeneous crystallization of CH3NH3PbBr3 (MAPbBr3) in the patterned substrate by a two-dimensional (2D) grating. This achieves high-quality optotelectronic structures on local sites in the micron scales and a homogeneous thin-film device in a centimeter scale, proposing a convenient technique to overcome the challenge for producing large-area thin-film devices with high quality by spin-coating. Through matching the concentration of the MAPbBr3/DMF solutions with the periods of the patterning structures, we found an optimized size of the patterning channels for a specified solution concentration (e.g., channel width of 5 μm for a concentration of 0.14 mg/mL). Such a design is also an excellent scheme for random lasing, since the crystalline periodic networks of MAPbBr3 grids are multi-crystalline constructions, and supply strong light-scattering interfaces. Using the random lasing performance, we can also justify the crystallization qualities and reveal the responsible mechanisms. This is important for the design of large-scale optoelectronic devices based on thin-film hybrid halide perovskites.

scholarly journals Conversion of WO3 thin films into self-crosslinked nanorods for large-scale ultraviolet detection

RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14147-14153 ◽  
Author(s):  
Youngho Kim ◽  
Sang Hoon Lee ◽  
Seyoung Jeong ◽  
Bum Jun Kim ◽  
Jae-Young Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Large Scale ◽  
High Density ◽  
Large Area ◽  
High Quality ◽  
Ultraviolet Detection ◽  
Heat Treated ◽  
Wo3 Thin Films

We heat-treated an amorphous large-area WO3 thin film to synthesize high-density, high-quality WO3 nanorods.

Synthesis of Large-Area Monolayer and Few-Layer MoSe2 Continuous Films by Chemical Vapor Deposition without Hydrogen assisted and Formation Mechanism

Nanoscale ◽  
2021 ◽  
Author(s):  
Hui Yan ◽  
Tong Yu ◽  
Heng Li ◽  
Zhuocheng Li ◽  
Haitao Tang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Layered Structure ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Controlled Synthesis ◽  
Two Dimensional ◽  
Large Area ◽  
High Quality

Two dimensional (2D) MoSe2 with layered structure has attracted extensive research due to its excellent electronic and optical properties. Controlled synthesis of large-scale and high-quality MoSe2 is highly desirable but...

scholarly journals Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Ali Zavabeti ◽  
Azmira Jannat ◽  
Li Zhong ◽  
Azhar Ali Haidry ◽  
Zhengjun Yao ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Large Area ◽  
Large Crystal ◽  
High Quality ◽  
Future Technology ◽  
Advantages And Disadvantages ◽  
Grain Sizes ◽  
Two Dimensional Materials ◽  
Synthesis Properties ◽  
Synthetic Routes

AbstractLarge-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries; however, currently presented as a significant challenge. Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions, controllable and uniform thicknesses, large crystal domains and minimum defects. In this review, recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined. Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised, and advantages and disadvantages of each approach considering ease of the synthesis, defects, grain sizes and uniformity are discussed.

Large-Scale Synthesis of Nickel Sulfide for Electronic Device Applications

MRS Advances ◽  
2020 ◽  
Vol 5 (52-53) ◽  
pp. 2727-2735
Author(s):  
Nidhi ◽  
Tashi Nautiyal ◽  
Samaresh Das
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Electronic Device ◽  
Electrical Performance ◽  
High Quality ◽  
X Ray ◽  
Device Applications ◽  
Large Scale Synthesis ◽  
Group 10

AbstractSeveral techniques have been employed for large-scale synthesis of group 10 transition metal dichalcogenides (TMDCs) based on platinum and palladium for nano- and opto-electronic device applications. Nickel Sulphides (NixSy), belonging to group 10 TMDC family, have been widely explored in the field of energy storage devices such as batteries and supercapacitors, etc. and commonly synthesized through the solution process or hydrothermal methods. However, the high-quality thin film growth of NixSy for nanoelectronic applications remains a central challenge. Here, we report the chemical vapor deposition (CVD) growth of NiS2 thin film onto a two-inch SiO2/Si substrate, for the first time. Techniques such as X-ray photoelectron spectroscopy, X-ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, have been used to analyse the quality of this CVD grown NiS2 thin film. A high-quality crystalline thin film of thickness up to a few nanometres (~28 nm) of NiS2 has been analysed here. We also fabricated a field-effect device based on NiS2 thin film using interdigitated electrodes by optical lithography. The electrical performance of the fabricated device is characterized at room temperature. On applying the drain voltage from -2 to +2 V, the device shows drain current in the range of 10-9 A before annealing and in the range of 10-6 A after annealing. This, being comparable to that from devices based on MoS2 and other two-dimensional materials, projects CVD grown NiS2 as a good alternative material for nanoelectronic devices.

scholarly journals Large‐area high quality PtSe 2 thin film with versatile polarity

InfoMat ◽  
2019 ◽  
Author(s):  
Wei Jiang ◽  
Xudong Wang ◽  
Yan Chen ◽  
Guangjian Wu ◽  
Kun Ba ◽  
...  
Keyword(s):  
Thin Film ◽  
Large Area ◽  
High Quality

Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials

ACS Nano ◽  
2015 ◽  
Vol 9 (11) ◽  
pp. 10612-10620 ◽  
Author(s):  
Yuan Huang ◽  
Eli Sutter ◽  
Norman N. Shi ◽  
Jiabao Zheng ◽  
Tianzhong Yang ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Large Area ◽  
High Quality ◽  
Two Dimensional Materials

Amorpiious Silicon Thin Film Transistor and its Applications to Large-Area Electironics

1984 ◽  
Vol 33 ◽  
Author(s):  
H. C. Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Two Dimensional ◽  
Large Area ◽  
Silicon Thin Film

ABSTRACTIn this paper, the amorphous silicon thin film transistor (a-Si:HTFT) technology is reviewed. Its applications to both one- and two-dimensional large-area devices are described. The issues related to the fabrication of TFT arrays on large-area substrates are also discussed.

scholarly journals Removal Mechanism and Defect Characterization for Glass-Side Laser Scribing of CdTe/CdS Multilayer in Solar Cells

2015 ◽  
Vol 137 (6) ◽  
Author(s):  
Hongliang Wang ◽  
Y. Lawrence Yao ◽  
Hongqiang Chen
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Large Scale ◽  
Numerical Models ◽  
Removal Mechanism ◽  
Large Area ◽  
Numerical Work ◽  
Solar Module ◽  
Laser Scribing

Laser scribing is an important manufacturing process used to reduce photocurrent and resistance losses and increase solar cell efficiency through the formation of serial interconnections in large-area solar cells. High-quality scribing is crucial since the main impediment to large-scale adoption of solar power is its high-production cost (price-per-watt) compared to competing energy sources such as wind and fossil fuels. In recent years, the use of glass-side laser scribing processes has led to increased scribe quality and solar cell efficiencies; however, defects introduced during the process such as thermal effect, microcracks, film delamination, and removal uncleanliness keep the modules from reaching their theoretical efficiencies. Moreover, limited numerical work has been performed in predicting thin-film laser removal processes. In this study, a nanosecond (ns) laser with a wavelength at 532 nm is employed for pattern 2 (P2) scribing on CdTe (cadmium telluride) based thin-film solar cells. The film removal mechanism and defects caused by laser-induced micro-explosion process are studied. The relationship between those defects, removal geometry, laser fluences, and scribing speeds are also investigated. Thermal and mechanical numerical models are developed to analyze the laser-induced spatiotemporal temperature and pressure responsible for film removal. The simulation can well-predict the film removal geometries, transparent conducting oxide (TCO) layer thermal damage, generation of microcracks, film delamination, and residual materials. The characterization of removal qualities will enable the process optimization and design required to enhance solar module efficiency.

scholarly journals Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics

Nano Letters ◽  
2012 ◽  
Vol 12 (2) ◽  
pp. 714-718 ◽  
Author(s):  
Kang Hyuck Lee ◽  
Hyeon-Jin Shin ◽  
Jinyeong Lee ◽  
In-yeal Lee ◽  
Gil-Ho Kim ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Large Scale ◽  
Hexagonal Boron Nitride ◽  
Large Area ◽  
High Quality ◽  
Boron Nitride Nanosheets ◽  
Large Scale Synthesis
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