scholarly journals Large‐area high quality PtSe 2 thin film with versatile polarity

InfoMat ◽  
2019 ◽  
Author(s):  
Wei Jiang ◽  
Xudong Wang ◽  
Yan Chen ◽  
Guangjian Wu ◽  
Kun Ba ◽  
...  
Keyword(s):  
Thin Film ◽  
Large Area ◽  
High Quality

scholarly journals Conversion of WO3 thin films into self-crosslinked nanorods for large-scale ultraviolet detection

RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 14147-14153 ◽  
Author(s):  
Youngho Kim ◽  
Sang Hoon Lee ◽  
Seyoung Jeong ◽  
Bum Jun Kim ◽  
Jae-Young Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Large Scale ◽  
High Density ◽  
Large Area ◽  
High Quality ◽  
Ultraviolet Detection ◽  
Heat Treated ◽  
Wo3 Thin Films

We heat-treated an amorphous large-area WO3 thin film to synthesize high-density, high-quality WO3 nanorods.

Synthesis of high-quality diamond thin film on large area

1994 ◽  
Author(s):  
Chengru Shi ◽  
Guofeng Pang ◽  
Yan Shi
Keyword(s):  
Thin Film ◽  
Large Area ◽  
High Quality ◽  
Diamond Thin Film

scholarly journals Large-area synthesis of nanoscopic catalyst-decorated conductive MOF film using microfluidic-based solution shearing

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jin-Oh Kim ◽  
Won-Tae Koo ◽  
Hanul Kim ◽  
Chungseong Park ◽  
Taehoon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Surface ◽  
High Surface Area ◽  
Microfluidic Channel ◽  
Microfluidic Channels ◽  
Large Area ◽  
High Quality ◽  
Energy Devices ◽  
Potential Applications

AbstractConductive metal-organic framework (C-MOF) thin-films have a wide variety of potential applications in the field of electronics, sensors, and energy devices. The immobilization of various functional species within the pores of C-MOFs can further improve the performance and extend the potential applications of C-MOFs thin films. However, developing facile and scalable synthesis of high quality ultra-thin C-MOFs while simultaneously immobilizing functional species within the MOF pores remains challenging. Here, we develop microfluidic channel-embedded solution-shearing (MiCS) for ultra-fast (≤5 mm/s) and large-area synthesis of high quality nanocatalyst-embedded C-MOF thin films with thickness controllability down to tens of nanometers. The MiCS method synthesizes nanoscopic catalyst-embedded C-MOF particles within the microfluidic channels, and simultaneously grows catalyst-embedded C-MOF thin-film uniformly over a large area using solution shearing. The thin film displays high nitrogen dioxide (NO2) sensing properties at room temperature in air amongst two-dimensional materials, owing to the high surface area and porosity of the ultra-thin C-MOFs, and the catalytic activity of the nanoscopic catalysts embedded in the C-MOFs. Therefore, our method, i.e. MiCS, can provide an efficient way to fabricate highly active and conductive porous materials for various applications.

High Quality CdS Thin Film Growth by Avoiding Anomalies in Chemical Bath Deposition for Large Area Thin Film Solar Cell Application

2015 ◽  
Vol 15 (11) ◽  
pp. 9240-9245 ◽  
Author(s):  
Yulisa Yusoff ◽  
Puvaneswaran Chelvanathan ◽  
Qamar Huda ◽  
Md. Akhtaruzzaman ◽  
Mohammad M. Alam ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Chemical Bath Deposition ◽  
Thin Film Solar Cell ◽  
Film Growth ◽  
Thin Film Growth ◽  
Large Area ◽  
High Quality ◽  
Solar Cell Application ◽  
Cds Thin Film

scholarly journals Large-area synthesis of nanoscopic catalyst-decorated conductive MOF film using microfluidic-based solution shearing

2021 ◽  
Author(s):  
Jin-Oh Kim ◽  
Won-Tae Koo ◽  
Hanul Kim ◽  
Chungseong Park ◽  
Calvin Hutomo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Surface ◽  
High Surface Area ◽  
Microfluidic Channel ◽  
Microfluidic Channels ◽  
Large Area ◽  
High Quality ◽  
Energy Devices ◽  
Potential Applications

Abstract Conductive metal-organic framework (C-MOF) thin-films have a wide variety of potential applications in the field of electronics, sensors, and energy devices. The immobilization of various functional species within the pores of C-MOFs can further improve the performance and extend the potential applications of C-MOFs thin-films. However, there are currently no effective strategies for facile and scalable synthesis of high quality ultra-thin C-MOFs while simultaneously immobilizing functional species within the MOF pores. Here, we develop microfluidic channel-embedded solution-shearing (MiCS) for ultra-fast (≤ 5 mm/s) and large-area synthesis of high-quality nanocatalyst-embedded C-MOF thin-films with thickness controllability down to tens of nanometers. The MiCS method synthesizes nanoscopic catalyst-embedded C-MOF particles within the microfluidic channels, and simultaneously grows catalyst-embedded C-MOF thin-film uniformly over a large area using solution shearing. The thin-film displays highest nitrogen dioxide (NO2) sensing properties at room temperature in air amongst two-dimensional materials, owing to the high surface area and porosity of the ultra-thin C-MOFs, and the catalytic activity of the nanoscopic catalysts embedded in the C-MOFs. Therefore, our method, i.e. MiCS, can open new avenues of highly active and conductive porous materials for various applications.

scholarly journals Two-Dimensional Crystalline Gridding Networks of Hybrid Halide Perovskite for Random Lasing

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1114
Author(s):  
Jingyun Hu ◽  
Haibin Xue ◽  
Xinping Zhang
Keyword(s):  
Thin Film ◽  
Large Scale ◽  
Solution Concentration ◽  
Two Dimensional ◽  
Random Lasing ◽  
Large Area ◽  
High Quality ◽  
Strong Light ◽  
Patterned Substrate ◽  
Convenient Technique

We report fabrication of large-scale homogeneous crystallization of CH3NH3PbBr3 (MAPbBr3) in the patterned substrate by a two-dimensional (2D) grating. This achieves high-quality optotelectronic structures on local sites in the micron scales and a homogeneous thin-film device in a centimeter scale, proposing a convenient technique to overcome the challenge for producing large-area thin-film devices with high quality by spin-coating. Through matching the concentration of the MAPbBr3/DMF solutions with the periods of the patterning structures, we found an optimized size of the patterning channels for a specified solution concentration (e.g., channel width of 5 μm for a concentration of 0.14 mg/mL). Such a design is also an excellent scheme for random lasing, since the crystalline periodic networks of MAPbBr3 grids are multi-crystalline constructions, and supply strong light-scattering interfaces. Using the random lasing performance, we can also justify the crystallization qualities and reveal the responsible mechanisms. This is important for the design of large-scale optoelectronic devices based on thin-film hybrid halide perovskites.

Amorphous Silicon Alloy Technology For Active Matrix Displays

1986 ◽  
Vol 70 ◽  
Author(s):  
Z. Yaniv ◽  
V. Cannella ◽  
Y. Baron ◽  
A. Lien ◽  
J. McGill
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Gate Dielectric ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel ◽  
High Quality ◽  
Active Matrix ◽  
Silicon Alloy ◽  
Metal Insulator Metal

ABSTRACTThin film semiconductor devices have been investigated over the past twenty years for application in large area flat panel displays. The development of thin film transistors and diodes based on amorphous silicon (a-Si) alloy materials has made the application of these devices, to display technologies, very attractive. More recently, manufacturing techniques to produce high quality large area films of amorphous silicon alloys have been demonstrated for photovoltaic applications.Most of the current research and development effort on active matrix liquid crystal displays (LCDs) has concentrated on a-Si alloy TFTs. The success of TFT based displays for large area flat panel displays has been limited so far, mainly due to the difficulty of obtaining a high quality gate dielectric by plasma deposition and due to the presence of crossing conductors on the same substrate, both increasing the probability of defects in the display. When a two terminal sandwich device is used, on the other hand, no gate dielectric is required, hence, a higher yield can be expected. Metal-insulator-metal and hydrogenated amorphous silicon alloy devices have been proposed for incorporation in LCDs. Performance requirements for a useful active matrix switching element and a comparison among the different a-Si alloy thin film devices used for this purpose will be reviewed.

scholarly journals Current Noise in Thick and Thin Film Resistors

1983 ◽  
Vol 10 (2-3) ◽  
pp. 81-85 ◽  
Author(s):  
S. Demolder ◽  
A. Van Calster ◽  
M. Vandendriessche
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Measured Data ◽  
Measuring Circuit ◽  
Current Noise ◽  
High Quality ◽  
Thin Film Resistors

In this paper a sensitive measuring circuit is described for the measurement of current noise on high quality thin and thick film resistors. Measured data on resistors are presented and analysed.

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