scholarly journals Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 626
Author(s):  
Ying Chang ◽  
Aixia Xiao ◽  
Rubing Li ◽  
Miaojing Wang ◽  
Saisai He ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Theoretical Model ◽  
Semiconductor Materials ◽  
Raman Intensity ◽  
Micro Raman Spectroscopy ◽  
Proposed Model ◽  
Polarized Raman ◽  
Birefringence Effect ◽  
Sic Wafer

Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical model of polarized Raman intensity was established by considering the birefringence effect. The distributions of angle-resolved Raman intensities were achieved under normal and oblique backscattering configurations. Experiments were performed on a self-built angle-resolved Raman system, which verified the validity of the proposed model and achieved the identification of crystal orientations of the 4H-SiC sample.

scholarly journals Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

2021 ◽  
Vol 2021 ◽  
pp. 1-17
Author(s):  
Ying Chang ◽  
Saisai He ◽  
Mingyuan Sun ◽  
Aixia Xiao ◽  
Jiaxin Zhao ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Theoretical Model ◽  
Scattered Light ◽  
Industrial Applications ◽  
Monocrystalline Silicon ◽  
Raman Intensity ◽  
Angle Rotation ◽  
Polarized Raman ◽  
Silicon Based ◽  
Quantified Analysis

Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. However, Raman measurements based on the specific fixed Raman geometry/polarization configuration are limited for the quantified analysis of c-Si performance, which makes it difficult to meet the high-end requirements of advanced silicon-based microelectronics and optoelectronics. Angle-resolved Raman measurements have become a new trend of experimental analysis in the field of materials, physics, mechanics, and optics. In this paper, the characteristics of the angle-resolved polarized Raman scattering of c-Si under the in-axis and off-axis configurations are systematically analyzed. A general theoretical model of the angle-resolved Raman intensity is established, which includes several alterable angle parameters, including the inclination angle, rotation angle of the sample, and polarization directions of the incident laser and scattered light. The diversification of the Raman intensity is given at different angles for various geometries and polarization configurations. The theoretical model is verified and calibrated by typical experiments. In addition, this work provides a reliable basis for the analysis of complex polarized Raman experiments on silicon-based structures.

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 567-570 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Light Scattering ◽  
Graphene Layer ◽  
Monolayer Graphene ◽  
Spectroscopy Study ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Few Layer Graphene

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

scholarly journals A Technique for Measuring Microparticles in Polar Ice Using Micro-Raman Spectroscopy

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
Toshimitsu Sakurai ◽  
Hiroshi Ohno ◽  
Shinichiro Horikawa ◽  
Yoshinori Iizuka ◽  
Tsutomu Uchida ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Cross Section ◽  
Chemical Reactions ◽  
Chemical Forms ◽  
Raman Intensity ◽  
Polar Ice ◽  
Micro Raman Spectroscopy ◽  
Sulfate Salts ◽  
Raman Scattering Cross Section

We describe in detail our method of measuring the chemical forms of microparticles in polar ice samples through micro-Raman spectroscopy. The method is intended for solid ice samples, an important point because melting the ice can result in dissociation, contamination, and chemical reactions prior to or during a measurement. We demonstrate the technique of measuring the chemical forms of these microparticles and show that the reference spectra of those salts expected to be common in polar ice are unambiguously detected. From our measurements, Raman intensity of sulfate salts is relatively higher than insoluble dust due to the specific Raman scattering cross-section of chemical forms of microparticles in ice.

Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy

2014 ◽  
Vol 778-780 ◽  
pp. 1166-1169
Author(s):  
Felix Fromm ◽  
Martin Hundhausen ◽  
Michl Kaiser ◽  
Thomas Seyller
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Graphene Layer ◽  
Scattered Light ◽  
Epitaxial Graphene ◽  
Raman Intensity ◽  
Top Down ◽  
Measurement Geometry

Raman spectroscopy is commonly applied for studying the properties of epitaxial graphene on silicon carbide (SiC). In principle, the Raman intensity of a single graphene layer is rather low compared to the signal of SiC. In this work we follow an approach to improve the Raman intensity of epitaxial graphene on SiC by recording Raman spectra in a top-down geometry, i.e. a geometry in which the graphene layer is probed with the excitation through the SiC substrate [1]. This technique takes advantage of the fact, that most of the Raman scattered light of the graphene is emitted into the SiC substrate. We analyze in detail the top-down measurement geometry regarding the graphene and SiC Raman intensity, as well as the influence of aberration effects caused by the refraction at the air/SiC interface.

Raman Spectroscopy Investigation of (SiC)1-x (Ain)x, Layers Formed by Ion Implantation in 6H-SiC

1996 ◽  
Vol 423 ◽  
Author(s):  
D. R. T. Zahn ◽  
T. Werninghaus ◽  
M. Thümer ◽  
J. Pezoldt ◽  
V. Heera
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spectroscopy ◽  
Positron Annihilation Spectroscopy ◽  
High Electron ◽  
Cross Sectional ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron ◽  
Plane View ◽  
Sic Wafer ◽  
Different Doses

Abstract6H silicon carbide (SiC) substrates were implanted with nitrogen and aluminum at different doses and annealed in the temperature range from 1300°C-1700°C. Micro-Raman Spectroscopy (μ-RS) measurements were performed in two sample geometries (conventional plane-view and cross-sectional). Changes of the polytype from 6H- to a cubic (SiC)1-xAIN)x, and influences in the 6H-SiC wafer up to depths of 2μm were detected. The results obtained by crosssectional μ-RS are discussed in comparison to other results from Reflection High Electron Energy Diffraction (RHEED), Rutherford Backscattering (RBS), Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM), and Positron Annihilation Spectroscopy (PAS) measurements.

Raman Tensor of Graphite: Symmetry of G, D and D' Phonons

2021 ◽  
Author(s):  
Mingge Jin ◽  
Lu Cheng ◽  
Wei Zheng ◽  
Ying Ding ◽  
Yanming Zhu ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Experimental Evidence ◽  
Raman Spectra ◽  
First Record ◽  
Raman Intensity ◽  
Physical Origin ◽  
Angle Dependence ◽  
Polarized Raman Spectroscopy ◽  
Polarized Raman ◽  
Resonant Mechanism

Abstract Since the first record of Raman spectra of graphite in 1970, the physical origin behind its Raman characteristic peaks (i.e., G, D and D' peaks) has been a focus of controversy. At present, it is generally believed that G peak corresponds to Raman active E 2g2 mode, while D and D' peaks are defect-induced ones. However, unequivocal experimental evidence for the phonon symmetries for these graphite Raman peaks is almost still in blank. Here, we clarify these important aspects using an angle resolved polarized Raman spectroscopy. It is found that the experimental Raman intensity of D and D' peaks shows a similar polarized angle dependence as that of G peak. Combined with Raman tensor analysis and double-resonant mechanism, the phonon symmetry of D' and D peak is further understood. Our work provides reliable experimental evidence and reasonable explanation for better understanding the phonon symmetry of graphite.

Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-Raman Spectroscopy

2014 ◽  
Vol 1693 ◽  
Author(s):  
N. Sugiyama ◽  
M. Yamada ◽  
Y. Urakami ◽  
M. Kobayashi ◽  
T. Masuda ◽  
...  
Keyword(s):  
Residual Stress ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Frequency Shift ◽  
Uniaxial Stress ◽  
Bending Test ◽  
Raman Shift ◽  
Micro Raman Spectroscopy ◽  
Four Point Bending

ABSTRACTThe correlation of stress in Silicon Carbide (SiC) crystal and frequency shift in micro- Raman spectroscopy was determined by an experimental method. We applied uniaxial stress to 4H- and 6H-SiC single crystal square bar specimen shaped with (0001) and (11-20) faces by four point bending test, under measuring the frequency shift in micro-Raman spectroscopy. The results revealed that the linearity coefficients between stress and Raman shift were -1.96 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (0001) face, -2.08 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (11-20) face and -2.70 cm-1/GPa for FTO(2/6)E2 on 6H-SiC (0001) face. Determination of these coefficients has made it possible to evaluate the residual stress in SiC crystal quantitatively by micro-Raman spectroscopy. We evaluated the residual stress in SiC substrate that was grown in our laboratory by utilizing the results obtained in this study. The result of estimation indicated that the SiC substrate with a diameter of 6 inch remained residual stress as low as ±15 MPa.

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

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