Raman Spectroscopy Investigation of (SiC)1-x (Ain)x, Layers Formed by Ion Implantation in 6H-SiC

1996 ◽  
Vol 423 ◽  
Author(s):  
D. R. T. Zahn ◽  
T. Werninghaus ◽  
M. Thümer ◽  
J. Pezoldt ◽  
V. Heera
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spectroscopy ◽  
Positron Annihilation Spectroscopy ◽  
High Electron ◽  
Cross Sectional ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron ◽  
Plane View ◽  
Sic Wafer ◽  
Different Doses

Abstract6H silicon carbide (SiC) substrates were implanted with nitrogen and aluminum at different doses and annealed in the temperature range from 1300°C-1700°C. Micro-Raman Spectroscopy (μ-RS) measurements were performed in two sample geometries (conventional plane-view and cross-sectional). Changes of the polytype from 6H- to a cubic (SiC)1-xAIN)x, and influences in the 6H-SiC wafer up to depths of 2μm were detected. The results obtained by crosssectional μ-RS are discussed in comparison to other results from Reflection High Electron Energy Diffraction (RHEED), Rutherford Backscattering (RBS), Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM), and Positron Annihilation Spectroscopy (PAS) measurements.

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra
Keyword(s):  
Structural Properties ◽  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gate Dielectric ◽  
Barrier Properties ◽  
Reaction Rates ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

Coupled Vibrations in Index-Identified Carbon Nanotubes

2014 ◽  
Vol 1700 ◽  
pp. 69-77 ◽  
Author(s):  
Dmitry Levshov ◽  
Thierry Michel ◽  
Matthieu Paillet ◽  
Xuan Tinh Than ◽  
Huy Nam Tran ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Electron Spectroscopy ◽  
Free Standing ◽  
Transmission Electron ◽  
Resonant Raman ◽  
Double Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

ABSTRACTCombining high resolution transmission electron spectroscopy, electron diffraction, and resonant Raman spectroscopy experiments on the same suspended (free-standing) individual carbon nanotubes is the ultimate approach to relate unambiguously the structure and the intrinsic phonon features of these nano-systems.By using this approach, the effect of coupling between nanotubes on the phonons is investigated in two model nano-systems: (i) a bundle of two non-identical SWNTs (inhomogeneous dimer), (ii) double-walled carbon nanotubes.

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.

Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

1990 ◽  
Vol 188 ◽  
Author(s):  
Ingrid De Wolf ◽  
Jan Vanhellemont ◽  
Herman E. Maes
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Cross Section ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron ◽  
Non Destructive ◽  
Zone Melt

ABSTRACTMicro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

scholarly journals Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5723
Author(s):  
Tao Wang ◽  
Zhen Yang ◽  
Bingsheng Li ◽  
Shuai Xu ◽  
Qing Liao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Nuclear Power ◽  
Power Plants ◽  
High Efficiency ◽  
Sample Surface ◽  
Lattice Defects ◽  
Transmission Electron ◽  
Sic Wafer

Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as “ion-cut” or “Smart-Cut”. It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H2+ to a fluence of 5 × 1016 H2+/cm2 at 450 and 900 °C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 °C and then annealed at 1100 °C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 °C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency “ion-cut” technology.

INTERMIXING OF ION-IMLANTED AlGaAs/GaAs SUPERLATTICES

1985 ◽  
Vol 56 ◽  
Author(s):  
J. Ralston ◽  
G.W. Wicks ◽  
L.F. Eastman ◽  
L. Rathbun ◽  
B.C. DeCooman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Auger Spectroscopy ◽  
Annealing Process ◽  
Dislocation Loops ◽  
Dense Network ◽  
Cross Sectional ◽  
The Third ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Residual Damage

AbstractCross-sectional Transmission Electron Microscopy, Sputter-Auger spectroscopy, and Raman spectroscopy have been used to study intermixing and residual damage in annealed ion-implanted Al0.3Ga0.7As/GaAs superlattices. Several implant species were studied Nse, Si, Mg, Be). Three different regions can be distinguished in the annealed ionimplanted superlattice samples. The topmost region contains a dense network of stacking faults and microtwins, residual damage from an implantation-amorphized region which has recrystallized during annealing. In the second region, which is relatively defect-free, either total, or at least appreciable intermixing of the GaAs and Al0.3Ga0.7As layers occurs. For fixed annealing conditions, the degree of intermixing varies with the mass of the implanted species. The third region contains many small dislocation loops which form by the agglomeration of point defects during implantation or the subsequent annealing process. Raman spectroscopy is used to compare the degree of intermixing and residual damage between AlGaAs alloys generated by superlattice disordering and uniform “as-grown” alloys of the same composition which have undergone identical implant and anneal treatments.

The Formation Mechanism of Carrot Defects in SiC Epifilms

2006 ◽  
Vol 911 ◽  
Author(s):  
Hui Chen ◽  
Guan Wang ◽  
Yi Chen ◽  
Xiaoting Jia ◽  
Jie Bai ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mechanism Of Formation ◽  
Cross Sectional ◽  
Screw Dislocations ◽  
X Ray ◽  
Transmission Electron ◽  
Sic Wafer ◽  
Scanning Electron

AbstractCarrot-like defects in a 7&#61616; off-cut (from [0001] toward <1-210> direction) 4H-SiC wafer with a 36μm thick 4H-SiC epilayer have been investigated using Nomarski optical microscopy, synchrotron white beam x-ray topography (SWBXT), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). X-ray topographs confirm that threading screw dislocations are often associated with the carrots. Cross-sectional TEM observation confirms that a prismatic stacking fault exists below the carrot. This fault was found to show contrast in all observed diffraction geometries except for g=0004. A model for the mechanism of formation of this type of defect during epitaxial growth is proposed.

Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers

1998 ◽  
Vol 264-268 ◽  
pp. 661-664 ◽  
Author(s):  
T. Werninghaus ◽  
D.R.T. Zahn ◽  
R.A. Yankov ◽  
A. Mücklich ◽  
Jörg Pezoldt
Keyword(s):  
Raman Spectroscopy ◽  
Cross Sectional ◽  
Structural Investigations ◽  
Micro Raman Spectroscopy
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