Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-Raman Spectroscopy

2014 ◽  
Vol 1693 ◽  
Author(s):  
N. Sugiyama ◽  
M. Yamada ◽  
Y. Urakami ◽  
M. Kobayashi ◽  
T. Masuda ◽  
...  
Keyword(s):  
Residual Stress ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Frequency Shift ◽  
Uniaxial Stress ◽  
Bending Test ◽  
Raman Shift ◽  
Micro Raman Spectroscopy ◽  
Four Point Bending

ABSTRACTThe correlation of stress in Silicon Carbide (SiC) crystal and frequency shift in micro- Raman spectroscopy was determined by an experimental method. We applied uniaxial stress to 4H- and 6H-SiC single crystal square bar specimen shaped with (0001) and (11-20) faces by four point bending test, under measuring the frequency shift in micro-Raman spectroscopy. The results revealed that the linearity coefficients between stress and Raman shift were -1.96 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (0001) face, -2.08 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (11-20) face and -2.70 cm-1/GPa for FTO(2/6)E2 on 6H-SiC (0001) face. Determination of these coefficients has made it possible to evaluate the residual stress in SiC crystal quantitatively by micro-Raman spectroscopy. We evaluated the residual stress in SiC substrate that was grown in our laboratory by utilizing the results obtained in this study. The result of estimation indicated that the SiC substrate with a diameter of 6 inch remained residual stress as low as ±15 MPa.

EVALUATION OF RESIDUAL STRESS OF COPPER PIPE BY USING RAMAN SPECTROSCOPY

2008 ◽  
Vol 22 (11) ◽  
pp. 1007-1012
Author(s):  
SANG-YOUNG KIM ◽  
JAE-MEAN KOO ◽  
CHANG-SUNG SEOK
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Pure Copper ◽  
Fem Analysis ◽  
Bending Test ◽  
Raman Shift ◽  
Stress Distributions ◽  
Nondestructive Measurement ◽  
Bending Tests ◽  
Copper Pipe

In most cases, a straight pipe is used after complicated bending work in a mechanical system. In this work process, the plastic deformation of the pipe produces residual stress in the pipe. This residual stress significantly affects the behavior of pipe fracture. For this reason, residual stress must be evaluated. Measuring the residual stress of a U-shaped copper pipe is difficult with existing destructive and nondestructive measurement methods. In this paper, the residual stress of a U-shaped copper pipe (99.9% pure copper) was evaluated from the Raman shift by Raman spectroscopy and FEM analysis. Also, the results of the bending test by FEM analysis and experiments are compared. The analyzed results of Raman spectra had a similar tendency with the results of the FEM analysis in regard to the residual stress distributions in the U-shaped pipes. Also, the results of the bending tests were shown resemblance.

Determination of acetaminophen spatial distribution and content in tablets using confocal micro-Raman spectroscopy mapping

2020 ◽  
Vol 22 (9) ◽  
Author(s):  
Hong-yu Jiang ◽  
Chang-hong Ding ◽  
Yue Wang ◽  
Ying-xin Zhang ◽  
Ahmed Mohammed ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Spatial Distribution ◽  
Micro Raman Spectroscopy

Characterization and Evaluation of Mechanical Properties and Residual Stress in Aluminum-Magnesium Alloys Welded by the FSW Process

2020 ◽  
Vol 1012 ◽  
pp. 349-353
Author(s):  
D.B. Colaço ◽  
M.A. Ribeiro ◽  
T.M. Maciel ◽  
R.H.F. de Melo
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Residual Stresses ◽  
Welding Process ◽  
Bending Test ◽  
Uniaxial Tensile ◽  
Uniaxial Tensile Test ◽  
Friction Stir ◽  
Aluminum Magnesium Alloys

The demand for lighter materials with suitable mechanical properties and a high resistance to corrosion has been increasing in the industries. Therefore, aluminum appears as an alternative due to its set of properties. The aim of this work was to evaluate residual stress levels and mechanical properties of welded joints of Aluminum-Magnesium alloy AA 5083-O using the Friction Stir Welding process. For mechanical characterization were performed a uniaxial tensile test, Vickers hardness, bending test and, finally, the determination of residual stresses. It was concluded that welding by FSW process with an angle of inclination of the tool at 3o, established better results due to better mixing of materials. The best results of tensile strength and a lower level of residual stresses were obtained using a tool rotation speed of 340 RPM with welding advance speed of 180 mm/min and 70 mm/min.

scholarly journals Study on Local Residual Stress in a Nanocrystalline Cr2O3 Coating by Micro-Raman Spectroscopy

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 500 ◽  
Author(s):  
Qiu Li ◽  
Yanrong Gou ◽  
Tie-Gang Wang ◽  
Tingyi Gu ◽  
Qiang Yu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Coating Thickness ◽  
Service Performance ◽  
Premature Failure ◽  
Edge Zone ◽  
Micro Raman Spectroscopy ◽  
Local Areas ◽  
Thick Coatings ◽  
Si Wafer

Residual stress in coatings often affects the service performance of coatings, and the residual stresses in some local areas even lead to premature failure of coatings. In this work, we characterized the residual stress of local micro-areas of a nanocrystalline Cr2O3 coating deposited on a Si wafer through micro-Raman spectroscopy, including the depositional edge zone where the electrode was placed, the micro-area containing Cr2O3 macroparticles, and other micro-areas vulnerable to cracks. To accurately measure the thickness of the coating, we combined optical interferometry and direct measurement by a profilometer. The results indicate the existence of in-plane tensile residual stress on the Cr2O3 coating. In thick coatings, the residual stress is independent of the coating thickness and is stable between 0.55 GPa and 0.75 GPa. As the coating thickness is less than 0.8 μm, the residual stress is directly related to the coating thickness. This in-plane tensile stress is considered as the origin of the observed microcrack, which can partially release the stress.

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 567-570 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Light Scattering ◽  
Graphene Layer ◽  
Monolayer Graphene ◽  
Spectroscopy Study ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Few Layer Graphene

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques

2011 ◽  
Vol 483 ◽  
pp. 14-17
Author(s):  
Jian An Lv ◽  
Zhen Chuan Yang ◽  
Gui Zheng Yan ◽  
Yong Cai ◽  
Bao Shun Zhang ◽  
...  
Keyword(s):  
Residual Stress ◽  
Residual Stress Distribution ◽  
Bending Test ◽  
Output Current ◽  
Micro Raman Spectroscopy ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Dry Etch ◽  
Mems Process

In this article, integrated AlGaN/GaN cantilevers on (111) silicon substrate are fabricated and characterized. The process started with AlGaN/GaN HEMTs fabrication followed by a series of dry-etch-only MEMS process. To characterize the residual stress distribution, Micro-Raman spectroscopy is used and the residual stress in suspended GaN cantilever is found ~ 90% lower after releasing. A type of micro-bending test is used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. An output current modulation greater than 20% can be observed when the cantilever is vertically downward deflected ~ 30 µm.

Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures

2006 ◽  
Vol 497 (1-2) ◽  
pp. 7-15 ◽  
Author(s):  
R. Srnanek ◽  
J. Geurts ◽  
M. Lentze ◽  
G. Irmer ◽  
J. Kovac ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Concentration Profile ◽  
Doping Concentration ◽  
Micro Raman Spectroscopy

Structural analysis of elastically bent organic crystals using in situ indentation and micro-Raman spectroscopy

2017 ◽  
Vol 53 (97) ◽  
pp. 13035-13038 ◽  
Author(s):  
Manish Kumar Mishra ◽  
Kamini Mishra ◽  
S. A. Syed Asif ◽  
Praveena Manimunda
Keyword(s):  
Raman Spectroscopy ◽  
Structural Analysis ◽  
Structural Dynamics ◽  
Bending Test ◽  
Organic Crystals ◽  
Three Point Bending ◽  
Micro Raman Spectroscopy

The structural dynamics of two elastically bendable, halogenated N-benzylideneaniline organic crystals were studied using an in situ three-point bending test and Raman spectroscopy.

Sign in / Sign up

Export Citation Format

Share Document