scholarly journals Latent Tracks in Ion-Irradiated LiTaO3 Crystals: Damage Morphology Characterization and Thermal Spike Analysis

Crystals ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 877 ◽  
Author(s):  
Xinqing Han ◽  
Yong Liu ◽  
Miguel L. Crespillo ◽  
Eva Zarkadoula ◽  
Qing Huang ◽  
...  

Systematic research on the response of crystal materials to the deposition of irradiation energy to electrons and atomic nuclei has attracted considerable attention since it is fundamental to understanding the behavior of various materials in natural and manmade radiation environments. This work examines and compares track formation in LiTaO3 induced by separate and combined effects of electronic excitation and nuclear collision. Under 0.71–6.17 MeV/u ion irradiation with electronic energy loss ranging from 6.0 to 13.8 keV/nm, the track damage morphologies evolve from discontinuous to continuous cylindrical zone. Based on the irradiation energy deposited via electronic energy loss, the subsequently induced energy exchange and temperature evolution processes in electron and lattice subsystems are calculated through the inelastic thermal spike model, demonstrating the formation of track damage and relevant thresholds of lattice energy and temperature. Combined with a disorder accumulation model, the damage accumulation in LiTaO3 produced by nuclear energy loss is also experimentally determined. The damage characterizations and inelastic thermal spike calculations further demonstrate that compared to damage-free LiTaO3, nuclear-collision-damaged LiTaO3 presents a more intense thermal spike response to electronic energy loss owing to the decrease in thermal conductivity and increase in electron–phonon coupling, which further enhance track damage.

2016 ◽  
Vol 105 ◽  
pp. 429-437 ◽  
Author(s):  
P. Liu ◽  
Y. Zhang ◽  
H. Xue ◽  
K. Jin ◽  
M.L. Crespillo ◽  
...  

1983 ◽  
Vol 27 ◽  
Author(s):  
R.G. Elliman ◽  
S.T. Johnson ◽  
K.T. Short ◽  
J.S. Williams

ABSTRACTThis paper outlines a model to account for the influence of doping and electronic processes on the solid phase epitaxial regrowth rate of ion implanted (100) silicon. In addition we present data which illustrates good quality epitaxial crystallisation of silicon at 400°C induced by He+ ion irradiation. We tentatively suggest that electronic energy-loss processes may be responsible for this behaviour.


AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015016 ◽  
Author(s):  
Eva Zarkadoula ◽  
Ke Jin ◽  
Yanwen Zhang ◽  
William J. Weber

1984 ◽  
Vol 35 ◽  
Author(s):  
F. L. Headrick ◽  
L. E. Seiberling

ABSTRACTWe have shown that irradiation of Ag-Si and Au-Si interfaces by 14 MeV 016 ions can produce non-registered silicon at the metal-silicon interface. Evidence that this effect is due to electronic energy loss of the bombarding ion is presented. The possible relationship of this effect to MeV-ion enhanced adhesion is discussed.


2007 ◽  
Vol 1027 ◽  
Author(s):  
Yogendra Kumar Mishra ◽  
Devesh Kumar Avasthi ◽  
Fouran Singh ◽  
Jean Claude Pivin ◽  
Eckhard Pippel

AbstractThin silica films embedded with Au nanoparticles (NPs) were prepared by atom beam co-sputtering and RF-magnetron sputtering. The growth kinetics of Au NPs in atom beam co-sputtered film, under 90 MeV Ni ion irradiation, was studied by in-situ X ray diffraction experiment in the materials science beam line at IUAC, New Delhi. The growth of NPs from 4 nm (for pristine) to 9 nm at a fluence of 1 × 1014 ions/cm2 was observed with rapid growth upto the size track diameter, however slowed beyond it. 120 MeV Au ion irradiation of RF magnetron sputtered films resulted in the elongation of Au NPs along ion beam direction. The aspect ratio of elongated NPs (Au nanorods) is found to be ∼3.5, which mainly depends on the electronic energy deposited within the system. Hence the present work reports that the ion irradiation is an effective tool for tailoring the size, shape and size distribution of NPs. The results are discussed in the framework of thermal spike model.


2018 ◽  
Vol 6 (6) ◽  
pp. 339-344 ◽  
Author(s):  
Neila Sellami ◽  
Miguel L. Crespillo ◽  
Yanwen Zhang ◽  
William J. Weber

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