Disorder Production at Metal-Silicon Interfaces by MeV/amu Ion Irradiation

1984 ◽  
Vol 35 ◽  
Author(s):  
F. L. Headrick ◽  
L. E. Seiberling
Keyword(s):  
Energy Loss ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Relationship Of ◽  
Silicon Interface

ABSTRACTWe have shown that irradiation of Ag-Si and Au-Si interfaces by 14 MeV 016 ions can produce non-registered silicon at the metal-silicon interface. Evidence that this effect is due to electronic energy loss of the bombarding ion is presented. The possible relationship of this effect to MeV-ion enhanced adhesion is discussed.

scholarly journals A coupled effect of nuclear and electronic energy loss on ion irradiation damage in lithium niobate

2016 ◽  
Vol 105 ◽  
pp. 429-437 ◽  
Author(s):  
P. Liu ◽  
Y. Zhang ◽  
H. Xue ◽  
K. Jin ◽  
M.L. Crespillo ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Energy Loss ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Irradiation Damage ◽  
Coupled Effect

Epitaxial Crystallisation of Doped Amorphous Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
R.G. Elliman ◽  
S.T. Johnson ◽  
K.T. Short ◽  
J.S. Williams
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Epitaxial Regrowth ◽  
Ion Implanted

ABSTRACTThis paper outlines a model to account for the influence of doping and electronic processes on the solid phase epitaxial regrowth rate of ion implanted (100) silicon. In addition we present data which illustrates good quality epitaxial crystallisation of silicon at 400°C induced by He+ ion irradiation. We tentatively suggest that electronic energy-loss processes may be responsible for this behaviour.

scholarly journals Synergistic effects of nuclear and electronic energy loss in KTaO3 under ion irradiation

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015016 ◽  
Author(s):  
Eva Zarkadoula ◽  
Ke Jin ◽  
Yanwen Zhang ◽  
William J. Weber
Keyword(s):  
Energy Loss ◽  
Ion Irradiation ◽  
Synergistic Effects ◽  
Electronic Energy

scholarly journals Latent Tracks in Ion-Irradiated LiTaO3 Crystals: Damage Morphology Characterization and Thermal Spike Analysis

Crystals ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 877 ◽  
Author(s):  
Xinqing Han ◽  
Yong Liu ◽  
Miguel L. Crespillo ◽  
Eva Zarkadoula ◽  
Qing Huang ◽  
...  
Keyword(s):  
Energy Loss ◽  
Ion Irradiation ◽  
Lattice Energy ◽  
Electronic Energy ◽  
Nuclear Collision ◽  
Systematic Research ◽  
Thermal Spike ◽  
Spike Response ◽  
Thermal Spike Model ◽  
Irradiation Energy

Systematic research on the response of crystal materials to the deposition of irradiation energy to electrons and atomic nuclei has attracted considerable attention since it is fundamental to understanding the behavior of various materials in natural and manmade radiation environments. This work examines and compares track formation in LiTaO3 induced by separate and combined effects of electronic excitation and nuclear collision. Under 0.71–6.17 MeV/u ion irradiation with electronic energy loss ranging from 6.0 to 13.8 keV/nm, the track damage morphologies evolve from discontinuous to continuous cylindrical zone. Based on the irradiation energy deposited via electronic energy loss, the subsequently induced energy exchange and temperature evolution processes in electron and lattice subsystems are calculated through the inelastic thermal spike model, demonstrating the formation of track damage and relevant thresholds of lattice energy and temperature. Combined with a disorder accumulation model, the damage accumulation in LiTaO3 produced by nuclear energy loss is also experimentally determined. The damage characterizations and inelastic thermal spike calculations further demonstrate that compared to damage-free LiTaO3, nuclear-collision-damaged LiTaO3 presents a more intense thermal spike response to electronic energy loss owing to the decrease in thermal conductivity and increase in electron–phonon coupling, which further enhance track damage.

scholarly journals Two-stage synergy of electronic energy loss with defects in LiTaO3 under ion irradiation

2018 ◽  
Vol 6 (6) ◽  
pp. 339-344 ◽  
Author(s):  
Neila Sellami ◽  
Miguel L. Crespillo ◽  
Yanwen Zhang ◽  
William J. Weber
Keyword(s):  
Energy Loss ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Two Stage

Ion irradiation of epitaxialYBa2Cu3O7−δfilms: Effects of electronic energy loss

1990 ◽  
Vol 42 (7) ◽  
pp. 4135-4142 ◽  
Author(s):  
B. Hensel ◽  
B. Roas ◽  
S. Henke ◽  
R. Hopfengärtner ◽  
M. Lippert ◽  
...  
Keyword(s):  
Energy Loss ◽  
Ion Irradiation ◽  
Electronic Energy

Multiscale Simulations of Irradiation Effects of Bilayer Graphene Induced by Swift Heavy Ions

2017 ◽  
Vol 14 (1) ◽  
pp. 485-489 ◽  
Author(s):  
Dong-Dong Zhao
Keyword(s):  
Energy Loss ◽  
Ion Irradiation ◽  
Single Layer ◽  
Heavy Ion ◽  
Bilayer Graphene ◽  
Electronic Energy ◽  
Single Layer Graphene ◽  
Cylindrical Region ◽  
Velocity Effect ◽  
Radial Dose

The damage production induced by swift heavy ion irradiation in bilayer graphene (BLG) is investigated. The radial dose distributions of delta rays produced by bismuth ions are calculated by Monte Carlo simulation. The radial dose rapidly decreases with increasing the distance from the path center. An unusual phenomenon is found that the velocity effect is not suitable for BLG the same as in the single layer graphene (SLG). The energy deposited into the lattice due to electron-phonon coupling is simulated by molecular dynamics method. By given energy to a cylindrical region, the carbon chains even nanoholes can be produced, which depends on the electronic energy loss (dE/dx). For BLG, the threshold electronic energy loss is lower than 6.5 keV/nm, which is lower than for SLG of 8 keV/nm. Through the calculation of density changes, a low density core and a high density shell structure can be seen while the tracks radii are obtained. With increasing dE/dx values, the track radius is first increasing and then saturates. At the end, the analysis of defects indicates that only a small part of the defects can be recombined and the radiation damage in BLG is less severe than in SLG.

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