scholarly journals Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 845
Author(s):  
Tomislav Brodar ◽  
Luka Bakrač ◽  
Ivana Capan ◽  
Takeshi Ohshima ◽  
Luka Snoj ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Depth Profile ◽  
Deep Level ◽  
Profile Analysis ◽  
Heavy Ion ◽  
Deep Levels ◽  
Carbon Ions ◽  
Concentration Depth Profile ◽  
Heavy Carbon ◽  
Light Medium

Deep level defects created by implantation of light-helium and medium heavy carbon ions in the single ion regime and neutron irradiation in n-type 4H-SiC are characterized by the DLTS technique. Two deep levels with energies 0.4 eV (EH1) and 0.7 eV (EH3) below the conduction band minimum are created in either ion implanted and neutron irradiated material beside carbon vacancies (Z1/2). In our study, we analyze components of EH1 and EH3 deep levels based on their concentration depth profiles, in addition to (−3/=) and (=/−) transition levels of silicon vacancy. A higher EH3 deep level concentration compared to the EH1 deep level concentration and a slight shift of the EH3 concentration depth profile to larger depths indicate that an additional deep level contributes to the DLTS signal of the EH3 deep level, most probably the defect complex involving interstitials. We report on the introduction of metastable M-center by light/medium heavy ion implantation and neutron irradiation, previously reported in cases of proton and electron irradiation. Contribution of M-center to the EH1 concentration profile is presented.

scholarly journals Aluminum and Electron-Irradiation Induced Deep-Levels In N-Type And P-Type 6H-Sic

1998 ◽  
Vol 510 ◽  
Author(s):  
Min Gong ◽  
C. D. Beling ◽  
S. Fung ◽  
G. Brauer ◽  
H. Wirth ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Heavy Ion ◽  
Deep Levels ◽  
Hole Trap ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
P Type ◽  
Dlts Spectra

AbstractTwo deep levels, located at Ev+0.26eV and Ec-0.44eV, in Al-implanted n-type samples and one at Ev+0.48eV in p-type samples have been observed by the deep level transient spectroscopy. The level of is identified as the shallower aluminum-acceptor. The 1.7 MeV electron-irradiation, used as a probe to distinguish the implantation induced deep-levels, induces at least six electron traps in the n-SiC and one hole-trap in the p-type material. The peak positions of these deep-levels in DLTS spectra are quite different from those induced by Al-implantation. This result suggests that various damages are formed after heavy ion (Al) and light particle (e) irradiation.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

Cascade damage effects on the swelling of irradiated materials

1975 ◽  
Vol 346 (1644) ◽  
pp. 81-102 ◽  
Keyword(s):  
Neutron Irradiation ◽  
Elevated Temperatures ◽  
Heavy Ion ◽  
Rate Theory ◽  
Void Swelling ◽  
Solution Treated ◽  
Continuous Generation ◽  
Volume Swelling ◽  
Physical Features ◽  
Cascade Damage

The homogeneous rate theory of void growth is extended to include the possibility of forming vacancy loops when the irradiation produces cascade damage. The analysis provides a basis for understanding and correlating the relative swelling generated during electron; heavy ion and fast neutron irradiation. In order to illustrate the physical features of the model it is applied in some detail to calculating the volume swelling in solution treated M316 stainless steel for which there is a considerable amount of experimental data. The results from these calculations serve to expose the sensitivity of void swelling to the scale on which interstitial loops are nucleated. They also highlight the particular difficulty arising from the continuous generation of transmutation gas in predicting swelling under neutron irradiation at elevated temperatures.

Sputter depth profile analysis of marker layers

1990 ◽  
Vol 15 (8) ◽  
pp. 463-465 ◽  
Author(s):  
J. A. Peinador ◽  
I. Abril ◽  
J. J. Jiménez-Rodríguez ◽  
A. Gras-Marti
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis

Depth profile analysis of solar cell silicon by GD-MS

2014 ◽  
Vol 29 (11) ◽  
pp. 2072-2077 ◽  
Author(s):  
M. Di Sabatino ◽  
C. Modanese ◽  
L. Arnberg
Keyword(s):  
Solar Cell ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Resolution ◽  
Impurity Distribution ◽  
Concentration Profiles ◽  
Good Sensitivity ◽  
Transition Elements ◽  
Depth Profile Analysis

Comparison of SIMS (top) and GD-MS (bottom) analyses on sample R6-2b (implanted B). dc HR-GD-MS can be used for depth profile analysis of impurities in PV Si with good sensitivity and a depth resolution of 0.5 μm. Concentration profiles of samples contaminated with B, P and Ti agreed well with implanted levels. For fast diffusing transition elements, e.g. Fe and Cu, different impurity distribution mechanisms occur. This should be taken into account when analysing these impurities.

Sign in / Sign up

Export Citation Format

Share Document