Depth profile analysis of solar cell silicon by GD-MS

2014 ◽  
Vol 29 (11) ◽  
pp. 2072-2077 ◽  
Author(s):  
M. Di Sabatino ◽  
C. Modanese ◽  
L. Arnberg
Keyword(s):  
Solar Cell ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Resolution ◽  
Impurity Distribution ◽  
Concentration Profiles ◽  
Good Sensitivity ◽  
Transition Elements ◽  
Depth Profile Analysis

Comparison of SIMS (top) and GD-MS (bottom) analyses on sample R6-2b (implanted B). dc HR-GD-MS can be used for depth profile analysis of impurities in PV Si with good sensitivity and a depth resolution of 0.5 μm. Concentration profiles of samples contaminated with B, P and Ti agreed well with implanted levels. For fast diffusing transition elements, e.g. Fe and Cu, different impurity distribution mechanisms occur. This should be taken into account when analysing these impurities.

High Depth Resolution Depth Profile Analysis of Ultra Thin High-κ Hf Based Films using MEIS Compared with XTEM, XRF, SE and XPS

2019 ◽  
Vol 25 (3) ◽  
pp. 349-361 ◽  
Author(s):  
Jaap Van den Berg ◽  
Michael A. Reading ◽  
Andrea Parisini ◽  
Michael Kolbe ◽  
Burkhard Beckhoff ◽  
...  
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Resolution ◽  
Depth Profile Analysis ◽  
High Depth

Depth-profile analysis of nanostructures by SIMS: Depth resolution function

2008 ◽  
Vol 72 (7) ◽  
pp. 895-898 ◽  
Author(s):  
Yu. Kudriavtsev ◽  
S. Gallardo ◽  
A. Villegas ◽  
G. Ramirez ◽  
R. Asomoza
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Resolution ◽  
Depth Profile Analysis ◽  
Resolution Function

Sputter depth profile analysis of marker layers

1990 ◽  
Vol 15 (8) ◽  
pp. 463-465 ◽  
Author(s):  
J. A. Peinador ◽  
I. Abril ◽  
J. J. Jiménez-Rodríguez ◽  
A. Gras-Marti
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis
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