scholarly journals Memristive Properties of PANI-Polysterene/PVDF-TrFE Interface

2019 ◽  
Vol 4 (2) ◽  
pp. 56 ◽  
Author(s):  
Artem V. Budaev ◽  
Roman N. Belenkov ◽  
Nikita A. Emelianov
Keyword(s):  
Charge Carriers ◽  
Measurement Cycle ◽  
X Ray ◽  
Current Voltage ◽  
Xrd Phase Analysis ◽  
Bulk Volume ◽  
Capture And Release ◽  
Current Voltage Characteristics ◽  
Eds Microanalysis

The article presents the results of an experimental study of the transport of charge carriers through semiconductor PANI-polystyrene/ ferroelectric PVDF-TrFE interface. Current-voltage characteristics of the structure under study have a typical form for memristors and may be explained by the movement of charge carriers in the internal switchable field of the crystal ferroelectric microregions located within a bulk volume of amorphous PVDF-TrFE matrix. This assumption is subject to XRD phase analysis, FTIR spectroscopy, and X-ray EDS microanalysis. A long-term (about 100 h) relaxation is detected for the resistance of the PANI-polysturene/PVDF-TrFE interface after the current-voltage characteristics measurement cycle that is associated with the processes of capture and release traps of charge carriers.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

ELECTRONIC STRUCTURE AND CONDUCTIVITY OF HYDROCARBON FILMS OBTAINED IN PLASMA DISCHARGES OF TOKAMAK T-10

1970 ◽  
Vol 61 (11) ◽  
Author(s):  
Galina A. Sokolina ◽  
Igor I. Arkhipov ◽  
Nikolay Yu. Svechnikov ◽  
Sergey A. Grashin
Keyword(s):  
Activation Energy ◽  
Electronic Structure ◽  
Temperature Dependence ◽  
Direct Current ◽  
Plasma Discharges ◽  
X Ray ◽  
Hydrocarbon Films ◽  
Direct Current Conductivity ◽  
Current Voltage ◽  
Current Voltage Characteristics

Amorphous hydrocarbon films on silicon substrates obtained in the chamber of tokamak T-10 with space-bounded deuterium plasma by carbon diaphragms were studied. Using the methods of spectrophotometry, ellipsometry, X-ray photoemission spectroscopy and X-ray excited Auger electron spectroscopy, it was established that the refraction and absorption coefficients of films, as well as the parameters of the electronic structure such as the magnitude of the band gap, the fraction of sp2-hybridized carbon and the chemical composition of impurities depend on the characteristics of the discharge in the tokamak. It is shown that the deposited films refer to high-resistance dielectrics, and they can be classified by optical properties as hard or soft amorphous hydrocarbon films, depending on the type of the plasma discharge (pulse working discharge or long-term low-energy cleaning discharge). Wherein, the conductivity of hard films is less than that of soft films, which corresponds to a smaller fraction of sp2-states of carbon in these films and to a higher value of the band gap. The current-voltage characteristics and the temperature dependence of the direct current conductivity of hard and soft films were measured. It was shown that in the temperature range of 293–550 K, the conductivity is determined by the hopping conductivity mechanism over localized states near the Fermi level and the boundaries of the allowed bands. The hopping conductivity mechanism is also indicated by the power law obtained at room temperature at alternating current with a value of a power exponent close to 0.8. The measurement of the current-voltage characteristics and the temperature dependence of the conductivity of hard and soft films showed a significant difference in the activation energy of conductivity and the conductivity at an elevated temperature. The established dependences of the direct current conductivity and the activation energy value of the films on the discharge parameters can be used as diagnostic benchmarks of different types of plasma discharges in a tokamak. Data on the electrical conductivity of the films are analyzed within the framework of the concept of the electronic structure of amorphous non-crystalline materials.  

scholarly journals Устойчивые к полевым повреждениям структуры кремний-сверхтонкий окисел (42 нм)-поликремний

2021 ◽  
Vol 55 (1) ◽  
pp. 24
Author(s):  
Д.А. Белорусов ◽  
Е.И. Гольдман ◽  
В.Г. Нарышкина ◽  
Г.В. Чучева
Keyword(s):  
Electronic States ◽  
Oxide Thickness ◽  
The State ◽  
Charge Carriers ◽  
Potential Relief ◽  
Insulator Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ultrathin Oxide ◽  
Silicon Silicon

Results of studies of silicon−silicon-ultrathin oxide (42 A˚ )−polysilicon structures structures stabile resistant to field damage are presented. It was found that the total recharging of localized electronic states and minority charge carriers, concentrated at the substrate-insulator interface, which occurs with a change in the field voltage and is close to the same characteristic of structures with an oxide thickness of 37 A˚ . The current, flowing through SiO2, in the enrichment state of the semiconductor increases with increasing voltage much more strongly than in the state of depletion. Moreover, the asymmetry of current-voltage characteristics in relation to the polarity of the voltage, falling on the insulator in samples with a thickness of 42 A˚ SiO2 is more pronounced than in structures with an oxide of 37 A˚ . An explanation for this asymmetry is possible, if the potential relief in the insulator has a maximum, significantly shifted to the oxide−polysilicon interface, and the potential on the branch from the semiconductor side significantly decreases to the contact with the substrate.

scholarly journals Investigation of temperature dependences of current-voltage characteristics of hybrid organic materials based on zinc complexes

2021 ◽  
pp. 81-87
Author(s):  
Andrey Tyutyunik ◽  
Vladimir Gurchenko ◽  
Alim Mazinov
Keyword(s):  
Coordination Compound ◽  
Electrochemical Analysis ◽  
Zinc Complexes ◽  
Charge Carriers ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Homo And Lumo ◽  
Current Voltage Characteristics ◽  
Fundamental Values

In this work, we analyzed the current-voltage characteristics in the temperature range of the hybrid organic material C24H24N6O3Zn in order to determine the prospects for using this compound as a semiconductor material. The range of temperature measurements was from 270 to 330 K. An electrochemical analysis of the studied coordination compound was carried out, the energies of the HOMO and LUMO levels were calculated. The method of obtaining, microscopy, and also the method of measuring the temperature dependences of the electrical properties of the obtained thin films of these hybrid materials based on zinc complexes are described. A number of fundamental values of the films of this coordination compound have been calculated: the activation energy is  0.88 eV and the mobility of charge carriers is  1.4710-11 cm V-1 s-1.

scholarly journals Photoconductivity of Thin Films Obtained from a New Type of Polyindole

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 228
Author(s):  
Renat B. Salikhov ◽  
Akhat G. Mustafin ◽  
Ilnur N. Mullagaliev ◽  
Timur R. Salikhov ◽  
Anastasiia N. Andriianova ◽  
...  
Keyword(s):  
Thin Films ◽  
Fluorescence Spectra ◽  
Test Sample ◽  
Charge Carriers ◽  
Transport Layer ◽  
Photoluminescence Spectra ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
New Type ◽  
Current Voltage Characteristics

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.

scholarly journals Особенности транспорта электронов и фотопроводимости в слое наноразмерных частиц сульфида свинца

2019 ◽  
Vol 45 (8) ◽  
pp. 3
Author(s):  
М.И. Шишкин ◽  
М.В. Гавриков ◽  
И.Т. Ягудин ◽  
А.Г. Роках
Keyword(s):  
Basic Mechanism ◽  
Charge Carriers ◽  
Optical Measurements ◽  
Free Charge ◽  
Current Voltage ◽  
Wide Range ◽  
Current Change ◽  
Current Voltage Characteristics ◽  
Lead Sulfide Nanoparticles ◽  
A Current

In the lead sulfide nanoparticles-based layers deposited from alcohol suspensions, analysis of the current-voltage characteristics made it possible to establish the basic mechanism of electron transport. Previously, using optical measurements in the range of 3500 nm, it was shown that the organic component in such layers was practically absent. When exposed to wide range radiation corresponding to the “transparency window” of the atmosphere of 8000–14000 nm, a current change in PbS nanodust was detected, where, as previously shown, absorption on free charge carriers can occur.

Effect of Systematic Changes of Ti and Hf Si-oxynitride Alloys by Nitrogen Incorporation as a Bond Constraint on Electrical and Material Properties

2007 ◽  
Vol 996 ◽  
Author(s):  
Sanghyun Lee ◽  
Gerry Lucovsky ◽  
L. B. Fleming ◽  
Jan Luning
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Ternary Alloys ◽  
Flat Band ◽  
Compositional Dependence ◽  
X Ray ◽  
State Splitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
X Ray Absorption

AbstractWe have investigated the effect of Si3N4 content in (Ti(Hf)O2)x(Si3N4)y(SiO2)1-x-y pseudo-ternary alloys by tracking systematic changes of electrical properties, including electrically active defects. Results from Soft x-ray photoelectron spectroscopy (SXPS) studies indicate no detectable hole traps for Ti/Hf Si oxynitrides with Si3N4 content >35%; these alloys have equal concentrations of Ti(Hf)O2 and SiO2, ~30-32%, and additionally are stable for annealing in Ar ambients to temperatures of 1100°C. Derivative near edge x-ray absorption spectroscopy (NEXAS) comparisons for the O K1 edges of TiO2 and optimized Ti Si oxynitride alloys provides a significantly reduced average crystal field d-state splitting from 1.9 to 1.6eV, as well as decreased electron trapping, and is correlated with a four-fold coordination of Ti in the Ti Si oxynitride alloys. The flat band voltage shift with varying frequency from 10 kHz to 1MHz in these alloys is less than 12 mV and the compositional dependence of current-voltage characteristics on Si3N4 composition results in the lowest leakage current at a Si3N4 content of ~40 % with the smallest equivalent oxide thickness (EOT) as well. Based on these studies, Transition Metal (TM) Si oxynitride alloys are anticipated to yield EOT <1 nm for scaled CMOS devises.

Rectifying characteristics and tunable magnetoresistance in heterojunctions of La0.9Hf0.1MnO3/0.05 wt.% Nb-doped SrTiO3

2017 ◽  
Vol 31 (25) ◽  
pp. 1745022 ◽  
Author(s):  
Yaping Qi ◽  
Xiangbo Liu ◽  
Hao Ni ◽  
Ming Zheng ◽  
Liping Chen ◽  
...  
Keyword(s):  
Band Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferromagnetic Transition ◽  
Grown Film ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics

La[Formula: see text]Hf[Formula: see text]MnO3 films were grown on 0.05 wt.% Nb-doped SrTiO3 substrates by pulsed laser deposition. X-ray diffraction measurements demonstrated that our samples were of good epitaxy and single-crystal. The temperature-dependent resistance has been investigated. It was observed that the as-grown film of La[Formula: see text]Hf[Formula: see text]MnO3 exhibited a typical paramagnetic-ferromagnetic transition. Heterojunctions of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 exhibited-asymmetric current–voltage characteristics and a remarkable temperature-dependent rectifying behavior in a wide temperature range (from 40 K to 300 K). And the most remarkable observation of this work is the existence of a crossover from positive to negative magnetoresistance in the La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction as the temperature decreases. A temperature-dependent magnetoresistance was studied as well. The rectifying characteristics and tunable magnetoresistance of these heterojunctions may be attributed to band structure of La[Formula: see text]Hf[Formula: see text]MnO3/0.05 wt.% Nb-doped SrTiO3 heterojunction.

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